Properties of semiconducting diamonds grown by the temperature-gradient method

The study of large semiconducting boron doped single crystal diamond sectorial structure

“…Mutual positioning of different parts for sample D4 in Table 2, received in plane {100} is consistent with pictures shown in [9]. If the initial sample has growth forms different from {111}, the photoluminescence picture shows dark blue and light blue glowing regions around the center (D5, Table 2).…”

Determination of carrier diffusion coefficient and lifetime in single crystalline CVD diamonds by light‐induced transient grating technique

“…For reason of comparing the carrier lifetime and the electrical charge mobility, we also investigated a free‐standing 1 mm thick diamond crystal (‘the HPHT sample’), grown in a HPHT reactor, using constant radial and axial temperature gradients as described in Ref. 6. The latter sample has been assigned as being ‘nitrogen‐free’ IIa type diamond because of absence of characteristic absorption bands in the 1000–1500 cm −1 spectral range; thus the nitrogen concentration was supposed to be below 10 17 cm −3 .…”

The effects of incident electron current density and temperature on the total electron emission yield of polycrystalline CVD diamond

“…We have found that increasing the temperature and/or reducing the current density result in a significant enhancement of the TEEY. These results are explained in terms of a dynamic competition between the formation of a positive space charge (accumulation of holes) that internally reduces the SE emission [8][9][10] and the thermally activated conduction of diamond [11,12] that tends to reduce the space charge formation. 0022-3727/10/135303+06$30.00…”