Properties of reactively sputtered AlxNy thin films for pyroelectric detectors

Calvano, Nicholas; Chrostoski, Philip; Voshell, Andrew; Braithwaite, Keesean; Rana, Mukti M.

doi:10.1117/12.2281240

Cited by 2 publications

(2 citation statements)

References 11 publications

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“…The room temperature operation of such a detector allows a reduction in cost, size, and complexity. In view of miniaturization, dielectric material thin films exhibiting complementary metal oxide semiconductor (CMOS) compatibility for integrating the devices with their readout electronics have been largely investigated: lead zirconate titanate (PZT) 1 , lithium tantalate (LiTaO 3 ) 2 , lithium niobiate (LiNbO 3 ) 3 , zinc oxide (ZnO) 4 , aluminium nitride (AlN) 5 , hafnium oxide (HfO 2 ) 6 , yttrium barium copper oxide (YBCO) 7,8 . The latter compound, YBa 2 Cu 3 O 6+x , is well-known as a high critical temperature superconductor, for oxygen doping x above ~ 0.5.…”

Section: Introductionmentioning

confidence: 99%

Mixed oxide provides an efficient solution to near infrared detection

Cheneau,

Dégardin,

Kreisler

2023

Electro-Optical and Infrared Systems: Technology and Applications XX

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With the objective of producing high-performance infrared radiation detectors, we have undertaken the study of devices based on the Y-Ba-Cu-O material produced in amorphous film (a-YBCO) by DC sputtering at low temperature (< 150 °C) on p-doped silicon substrates coated with a SiO x oxide film. Two types of structures have been considered: simple planar structures, where a-YBCO is connected to in-plane metal contacts, and trilayer structures where a-YBCO is sandwiched between the two contacts. The near-infrared response was recorded with a laser source at 850 nm wavelength, amplitude modulated up to 40 MHz. The main characteristics of the responses are: i) a 𝑓𝑓 +2 behavior at very low frequency (resulting from two dipolar relaxations); ii) a typically pyroelectric behavior in 𝑓𝑓 +1 up to a few tens of kHz; iii) a maximum response followed by a decrease in 𝑓𝑓 −1/2 , reflecting the heat diffusion through the substrate. All of those results could be interpreted with the help of a theoretical model with adjustable parameters. Small size trilayer devices exhibit a very fast response (time constant: 11 ns). Besides, with noise equivalent power levels as low as 8 pW/Hz 1/2 and detectivity values of 8×10 8 cm⋅Hz 1/2 •W −1 at 1 MHz, our uncooled devices are standing at the state-of-the-art both in terms of sensitivity and bandwidth.

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Section: Introductionmentioning

confidence: 99%

Mixed oxide provides an efficient solution to near infrared detection

Cheneau,

Dégardin,

Kreisler

2023

Electro-Optical and Infrared Systems: Technology and Applications XX

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“…In recent years, Aluminum Nitride (AlN) material is gaining significant interest [2], [3], [11], [12] as a pyroelectric material for uncooled thermal IR detection. Characteristics of AlN material include high Curie temperature (∼2000 • C) [13], [14], complementary metal-oxide-semiconductor (CMOS) compatibility and being free from lead (Pb) and lithium (Li).…”

mentioning

confidence: 99%

Considerations for an 8-inch Wafer-Level CMOS Compatible AlN Pyroelectric 5–14 μm Wavelength IR Detector Towards Miniature Integrated Photonics Gas Sensors

Zhang

et al. 2020

J. Microelectromech. Syst.

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CMOS compatibility and 8-inch manufacturability have been highly desired in MEMS technology. In this article, we demonstrate a MEMS pyroelectric IR detector using CMOS compatible AlN and 8-inch semiconductor wafer technology. This AlN pyroelectric detector detects IR over wavelength ranging from 5 µm to 14 µm. In addition, this detector is designed to have added mechanical stiffness for improved device integrity. The detectors are fabricated with different sensing area dimensions to compare their performance. The best performing detector has an NEP ∼ 8.87 × 10-9 W/ √ Hz and D * ∼ 6.04 × 10 6 cm √ Hz/W. These pyroelectric detectors are designed and built with the consideration to enable ease of monolithic integration with other components to form an integrated gas sensor system. This includes enabling detection of illumination from the front side and using an absorber stack that consists of CMOS dielectric layers. Subsequently, they will form a crucial part of the architectures for miniature photonics-based gas sensors. Their performance is a first step towards 8-inch wafer level CMOS-compatible manufacturable photonics gas sensors.

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Properties of reactively sputtered AlxNy thin films for pyroelectric detectors

Cited by 2 publications

References 11 publications

Mixed oxide provides an efficient solution to near infrared detection

Mixed oxide provides an efficient solution to near infrared detection

Considerations for an 8-inch Wafer-Level CMOS Compatible AlN Pyroelectric 5–14 μm Wavelength IR Detector Towards Miniature Integrated Photonics Gas Sensors

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