Profiles and annealing of thermally generated electron traps in boronimplanted phosphorusdoped siliconBoron ions with energy ranging from 40 to 250 keY have been implanted at room temperature in type-II a diamonds with doses of lOll and 10 16 cm-2 , The boron profiles have been measured using an ion analyzer, These profiles are compared with profiles calculated using Winterbon's theory, Reasonable agreement between experimental and theoretical profiles is obtained for the electronic stopping cross section measured by Omrod et al. up to about 180 keY, PACS numbers: 61.80.P, 81.20.M