Properties of polysilicon films annealed by a rapid thermal annealing process

Ristic, L.; Kniffin, Margaret L.; Gutteridge, R.; Hughes, H.G.

doi:10.1016/0040-6090(92)90556-q

Cited by 17 publications

(2 citation statements)

References 7 publications

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“…This in turn creates a problem regarding the adhesion between the PSG and the underlying layer, resulting in deformation of the polysilicon. The problem was solved by depositing the PSG on a thin undoped oxide by Putty et al [42] or by reducing the temperatures [43].…”

Section: Polysiliconmentioning

confidence: 99%

Development of surface micromachining techniques compatible with on-chip electronics

French

1996

J. Micromech. Microeng.

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Silicon has long been known to have excellent mechanical properties although the full potential of the material was not realized until micromachining techniques enabled the fabrication of true mechanical structures. The first types of structure were fabricated using bulk micromachining techniques, where the silicon wafer is etched to leave free-standing mechanical structures. More recently surface micromachining techniques have received considerable attention. In this case the mechanical structures are fabricated in thin films deposited on the silicon wafer surface. This development has yielded structures considerably smaller than those fabricated in bulk micromachining. In this paper the development of surface micromachining techniques is reviewed. This includes the modifications required to achieve compatibility with standard electronic circuitry.

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Section: Polysiliconmentioning

confidence: 99%

Development of surface micromachining techniques compatible with on-chip electronics

French

1996

J. Micromech. Microeng.

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“…Many researchers have investigated methods to reduce the residual stresses and their gradients on thin films. Among them, furnace annealing [1][2][3] and rapid thermal annealing (RTA) [4][5][6] have been very common methods for relaxing the residual stresses. However, they usually have high thermal budgets, and thus they are limited in applications to integrated systems of electronic circuits with microstructures.…”

Section: Introductionmentioning

confidence: 99%

Low-thermal-budget and selective relaxation of stress gradients in gold micro-cantilever beams using ion implantation

Kang¹,

Kim²,

Lee³

et al. 2005

J. Micromech. Microeng.

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The stress gradient of gold micro-cantilever beams induced during dry-release in oxygen plasma is quantitatively studied, and the relaxation of the stress gradient by He and N2 ion implantation is investigated. An analytic model considering the finite anchor stiffness of a step-up anchor and the geometry of the beam cross-section is constructed to evaluate the induced stress gradient. Various measurements are carried out to verify the effectiveness of ion implantation in relaxing the stress gradient.

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Measuring strain changes during production of thin film crystalline silicon on glass photovoltaic modules

Brazil

Green

2009

J Mater Sci: Mater Electron

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Properties of polysilicon films annealed by a rapid thermal annealing process

Cited by 17 publications

References 7 publications

Development of surface micromachining techniques compatible with on-chip electronics

Development of surface micromachining techniques compatible with on-chip electronics

Low-thermal-budget and selective relaxation of stress gradients in gold micro-cantilever beams using ion implantation

Measuring strain changes during production of thin film crystalline silicon on glass photovoltaic modules

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