Properties of physically deposited thin aluminium film coatings: A review

Mwema, Fredrick Madaraka; Oladijo, Oluseyi Philip; Akinlabi, Stephen A.; Akinlabi, Esther T.

doi:10.1016/j.jallcom.2018.03.006

Cited by 76 publications

(23 citation statements)

References 171 publications

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“…In most cases, when Al films are deposited on a substrate, the growth of close-packed planes perpendicular to the substrate surface has been observed. This structure reduces the surface energy of the substrate [17]. Similarly, we estimated that grain growth mainly accelerated when Al film thickness on the steel substrate exceeded 30 nm.…”

Section: Resultsmentioning

confidence: 70%

“…The effect of substrate types on the growth process was covered in our previous work [21]. The review [17] and references therein also revealed that substrates may have a critical influence on the morphology of the formed film. Although such a date has been previously published in the literature, there is still a lack of information related to the deposition of Al film on steel substrate by the sputtering method.…”

Section: Resultsmentioning

confidence: 98%

“…For instance, Garbacz et al reported that for thin Al films that were deposited on a Ti6Al4V substrate by the evaporation method, the number of pores and cracks were higher when compared to films that were deposited by magnetron sputtering on the same substrate [16]. Mwema et al reviewed the effect of different parameters on the structure of thin Al films [17]. It was shown that deposition conditions, such as deposition rate [18], alloy composition [19], substrate type, substrate temperature, and roughness [20] had a significant influence on the morphology and structure of the formed film.…”

Section: Resultsmentioning

confidence: 99%

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Deposition of Al Thin Film on Steel Substrate: The Role of Thickness on Crystallization and Grain Growth

Khachatryan

Lee

Kim

et al. 2018

Metals

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In this study, we deposited aluminum (Al) films of different thicknesses on steel substrate and examined their phase, microstructure, and film growth process. We estimated that films of up to 30 nm thickness were mainly amorphous in nature. When the film thickness exceeded 30 nm, crystallization was observed. The further increase in film thickness triggered grain growth, and the formation of grains up to 40 nm occurred. In such cases, the Al film had a cross-grained structure with well-developed primary grains networks that were filled with small secondary grains. We demonstrated that the microstructure played a key role in optical properties. The films below 30 nm showed higher specular reflection, whereas thicker films showed higher diffuse reflections.

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Section: Resultsmentioning

confidence: 70%

Section: Resultsmentioning

confidence: 98%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Deposition of Al Thin Film on Steel Substrate: The Role of Thickness on Crystallization and Grain Growth

Khachatryan

Lee

Kim

et al. 2018

Metals

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“…Aluminum thin films find applications in various fields including optics, microelectronics, solar, and coating . Their performance in such fields depend on the quality of the microstructure and their stability to mechanical loads .…”

Section: Introductionmentioning

confidence: 99%

Micromorphology and nanomechanical characteristics of sputtered aluminum thin films

Mwema

Akinlabi

Oladijo

2020

Materialwissenschaft Werkst

Self Cite

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Micromorphology and nanoindentation properties of sputtered aluminum thin films are presented. The field emission scanning electron microscope, atomic force microscopy (AFM) and nanoindentation results are presented for films prepared at a substrate temperature ranging between 44.5°C and 100°C. A multifractal approach on the microstructure is presented to comprehend the micromorphology of the films. The roughness decreases, whereas fractal dimension increases as the temperature increases. The hardness and Young's modulus do not exhibit any predictable trend. Hardness and Young's modulus exhibit a linear relationship. Figure 7. Nanoindentation characteristics of aluminum thin films at various temperatures.Figure 8. Youngs Modulus against hardness at various substrate temperature.Micromorphology and nanomechanical characteristics of sputtered aluminum thin films Materialwiss. Werkstofftech. 2020, 51, 787-791

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“…Free electrons in metal inserted ITO materials speed up the separated charge carriers and hence gear up the light transport from lower to the upper part when the light is incident on the device [9]. Al films good adhesion, low resistivity, nonoxidation and corrosion properties are quite impressive and as such is suitable for optical and electronic device applications [18][19][20]. The low resistivity and high transmittance (compared to other metals) in the visible region of Ag thin films at room temperature are key properties that attracted the widely use of Ag layer in ITO multilayer contacts [21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

Structural optical and electrical properties of transparent conductive ITO/Al-Ag/ITO multilayer contact

Isiyaku¹,

Ali²,

Nayan³

2019

Preprint

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Developing a new design and structure of transparent conductive oxides (TCO) materials to improve performance in optoelectronic devices are important and quite challenging. Microstructural, optical and electrical properties of sandwiched Al-Ag metals interlayer between top and bottom ITO layers (ITO/Al-Ag/ITO) have been investigated. The multilayer ITO/Al-Ag/ITO (IAAI) films were prepared using RF and DC magnetron sputtering method. Post annealing treatment at 400oC was conducted on IAAI and ITO (for reference) films in air. X-ray diffraction measurements show that the insertion of Al-Ag intermediate bilayer led to the crystallization of Ag interlayer even at as-deposited stage. Peaks intensities at ITO (222), Ag (111) and Al (200) crystal plane were observed after annealing treatment, indicating an enhancement in crystallinity of the IAAI film. The post-annealed IAAI film reveals a continuous and smooth surface roughness with improved growth in grain size as examined by atomic force microscopy (AFM) and field emission scanning electron microscopic (FESEM) respectively. Comparing the optoelectronic properties of IAAI film with single ITO film, the annealed IAAI film exhibited a remarkable improvement in optical transmittance (86.1%) with a very low sheet resistance of 2.93 Ω/sq as measured by UV-Vis spectrophotometer and four-point probe method. The carrier concentration increased more than double when Al-Ag layer was inserted between the ITO layers as determined by Hall Effect measurements. The under layer Al film helps to halts the Ag film agglomeration and oxidation which subsequently enhances the stability of IAAI multilayer film. The performance of IAAI contact has been found to be high at 76.4 × 10-3 Ω compares to single ITO (69.4 × 10-3) contact as calculated by the figure of merit (FOM).

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Properties of physically deposited thin aluminium film coatings: A review

Cited by 76 publications

References 171 publications

Deposition of Al Thin Film on Steel Substrate: The Role of Thickness on Crystallization and Grain Growth

Deposition of Al Thin Film on Steel Substrate: The Role of Thickness on Crystallization and Grain Growth

Micromorphology and nanomechanical characteristics of sputtered aluminum thin films

Structural optical and electrical properties of transparent conductive ITO/Al-Ag/ITO multilayer contact

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