Properties of p-type and n-type ZnO influenced by P concentration

Hu, Guo‐Xiong; Gong, Hao; Chor, Eng Fong; Wu, Ping

doi:10.1063/1.2408652

Cited by 47 publications

(26 citation statements)

References 28 publications

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“…These structural parameters are consistent with other calculated results [12]. With incorporation of P atom, many researches show that P atom prefers to substitute Zn or O atom in ZnO systems [33][34][35][36][37]. Therefore, the configuration of P occupying Zn site is tested based on the B doped ZnO supercell.…”

Section: Structural Properties Of B and P Codoped Zno Systemssupporting

confidence: 86%

First-principles calculations of electronic structure and optical properties of boron–phosphorus co-doped zinc oxide

Xue

Yang

et al. 2015

Materials Science in Semiconductor Processing

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Section: Structural Properties Of B and P Codoped Zno Systemssupporting

confidence: 86%

First-principles calculations of electronic structure and optical properties of boron–phosphorus co-doped zinc oxide

Xue

Yang

et al. 2015

Materials Science in Semiconductor Processing

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“…ZnO is a wide band gap (3.34 eV) semiconductor material with high-exciton binding energy (60 meV) and higher optical gain than GaN at a room temperature [5,6] . ZnO is one of the promising materials for low-voltage and short-wavelength optoelectronic applications such as UV devices, light-emitting diodes and laser diode [7][8][9] . Its other applications include transparent ultraviolet protection films, gas sensors and varistors [10,11] .…”

mentioning

confidence: 99%

Synthesis and optical properties of Ni-doped zinc oxide nanoparticles for optoelectronic applications

Elilarassi

Chandrasekaran

2010

Optoelectron. Lett.

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Nanocrystalline undoped and nickel doped zinc oxide (Zn 1-x Ni x O, x = 0.00, 0.01) powders are successfully synthesized by a simple and low-temperature "auto-combustion method". The microstructural and optical absorption and emission properties of the as-prepared samples are obtained using X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infra-red spectrometer (FTIR), UV-visible and photoluminescence (PL). The structure study confirms the formation of the hexagonal wurtzite ZnO without any secondary phase in the Ni-doped sample. The optical absorption measurements indicate the red shift in the absorption band edge upon nickel doping. The band gap energy decreases from 3.21 eV to 3.17 eV. The photoluminescence spectra of the as-prepared samples under a room temperature show strong ultraviolet (UV) and blue emission peaks. The PL emission research strongly reveals that Ni doping can effectively adjust the energy level which leads to a red shift at the emission peak in UV region.Nanocrystalline materials have attracted extensive attention due to their unique properties and immense potential applications in nanodevice fabrications [1][2][3][4] . ZnO is a wide band gap (3.34 eV) semiconductor material with high-exciton binding energy (60 meV) and higher optical gain than GaN at a room temperature [5,6] . ZnO is one of the promising materials for low-voltage and short-wavelength optoelectronic applications such as UV devices, light-emitting diodes and laser diode [7][8][9] . Its other applications include transparent ultraviolet protection films, gas sensors and varistors [10,11] . Though a wide research has been done on doped nanostructured materials, there are few reports on doped ZnO nanostructures, particularly about their optical properties. The transition metal doped nanostructure is an effective method to adjust the energy levels and surface states of ZnO, which can further introduce changes in its physical and especially optical properties [12] . In addition to the UV excitonic emission peak, ZnO commonly exhibits the visible luminescence at different emission wavelengths due to the intrinsic or extrinsic defects [13] .However, it is still a great challenge to synthesize ZnO nanostructures doped with the transition metal element using a simple process with a low cost. The solution growth method is an effective approach and promising route for synthesizing ZnO nanomaterials at a low temperature. Therefore, the solution growth "auto-combustion method" is used to prepare undoped ZnO and Ni-doped nanomaterials at a low temperature in this paper. The high quality nanocrystalline powders of Zn 1-x Ni x O (x=0.00, 0.01) are successfully synthesized and their structural and optical absorption and emission properties are investigated. The present synthesis method is reproducible and ensures the large scale production at a low temperature.All chemicals used are of analytical grade purity. In a typical synthesis of Zn 1-x Ni x O (x=0.00,0.01) samples, according to the appropriate proportion,...

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“…In the past decade, ZnO has generated great interest due to its potential applications in short-wavelength [1,2], optoelectronic devices [1,2], nanosensors [1,2], field emission displays [1][2][3], field effect transistors [1,2], optical switches [1,2], electroluminescence devices [1,2] and solar cells [1,2] due to its wide band gap (e.g. ∼3.37 eV), high melting point (1975 • C) [3], good thermal stability, large exciton binding energy (∼60 meV) [4], low cost and ease of synthesis.…”

Section: Introductionmentioning

confidence: 99%

Highly efficient luminescence from hybrid structures of ZnO/multi-walled carbon nanotubes for high performance display applications

Grover¹,

Gupta²,

Shanker³

2010

Nanotechnology

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We report an interesting observation on strong enhancement in green luminescence from hybrid ZnO/multi-walled carbon nanotubes (MWCNTs). The hybrid structures were synthesized via a high temperature sintering method. The strong green emission at 510 nm has been attributed to surface defects of ZnO, originating from interactions between ZnO and the MWCNT surface, which has been confirmed by high resolution transmission electron microscopy and x-ray photoelectron spectroscopy. Furthermore, the two-dimensional (2D) layer of this hybrid material shows a high degree of homogeneity and 82% transparency. Time resolved emission spectroscopy measurement shows a photoluminescence decay time in microseconds, which is suitable for making optoelectronic devices.

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Properties of p-type and n-type ZnO influenced by P concentration

Cited by 47 publications

References 28 publications

First-principles calculations of electronic structure and optical properties of boron–phosphorus co-doped zinc oxide

First-principles calculations of electronic structure and optical properties of boron–phosphorus co-doped zinc oxide

Synthesis and optical properties of Ni-doped zinc oxide nanoparticles for optoelectronic applications

Highly efficient luminescence from hybrid structures of ZnO/multi-walled carbon nanotubes for high performance display applications

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