Properties of nitrogen implanted and electron beam annealed bulk ZnO

Abstract

The optical properties of bulk ZnO ion implanted with nitrogen ions, at an energy of 23 keV have been studied as a function of implantation fluence and electron beam (EB) annealing conditions. Nuclear reaction analysis and Raman results have revealed the implanted N concentration and its structural changes with respect to various nitrogen ion fluences. The optical properties of nitrogen implanted bulk ZnO were investigated by low temperature photoluminescence measurements. An enhanced peak at 3.235 eV has been attributed to donor-accepter pair (DAP) emission involving the implanted N acceptor in ZnO. The emission near 3.3085 eV is attributed to a free electron to acceptor transition. We also report a broad band emission feature at ∼3.09 eV in the nitrogen implanted with 1–2×1015 ions cm−2 and EB annealed at 800–900 °C. This is assigned to a thermally activated nitrogen acceptor transition as it is unique only to nitrogen implanted samples. An ionization energy of 377 meV indicates that this line may correspond to a significantly less shallow acceptor level. In addition an increase in the intensity and dominance of this DAP line in nitrogen implanted samples over the other acceptor transitions was observed with increasing annealing time and temperatures. It is shown that EB annealing offers a method of enhanced nitrogen activation when compared to a more conventional furnace approach.

Defects in N, O and N, Zn implanted ZnO bulk crystals

“…3. These lines have been previously observed 8,12,40,41 in N-doped ZnO and were attributed to nophonon and LO-assisted radiative transitions which involve a deep N acceptor. The exact origin of the responsible recombination process remains, however, highly controversial as the emission has been assigned to recombination of excitons bound to a neutral acceptor (A 0 X) 8,42 and also to free electron to acceptor (FA) transitions.…”

A study on the redistribution of ion-implanted nitrogen in Ti-modified austenitic steel

“…This pre-treatment of annealing is carried out to ensure that the steel samples are defect-free initially. Two sets of such solution annealed samples have been implanted at room temperature with 30 keV N 15 ions to a fluence of 1 Â 10 15 and 5 Â 10 15 atoms cm À2 using the GNS dual low-energy ion implantation facility [12]. The ion beam has been raster scanned over the surface to produce a laterally homogeneous implantation into substrate.…”

Hybrid nanostructured thin-films by PLD for enhanced field emission performance for radiation micro-nano dosimetry applications

“…It was found that the few of the phonon modes cannot be assigned to the host ZnO and C: ZnO film which suggests the presence of an additional phonon mode (APM). The similar kind of APM in RS was reported undoped and Cdoped ZnO thin-films prepared by various physical and chemical methods [1,12].…”