Properties of MBE Cd
 
 x
 
 Hg
 
 1−
 x
 
 Te/GaAs structures modified by ion‐beam milling

Bogoboyashchyy, V. V.; Dvoretsky, S. A.; Іжнін, І. І.; Mikhaĭlov, N. N.; Sidorov, Yu. G.; Сизов, Ф. Ф.; Варавин, В. С.; Yudenkov, V. A.

doi:10.1002/pssc.200303947

Cited by 15 publications

(13 citation statements)

References 11 publications

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“…This effect is now widely used in MCT technology, when ion milling is employed for fabrication of p−n junctions in vacancy-and acceptor-doped-type material. It appeared also that strongly non-equilibrium processes which take place under ion milling, when a crystal is oversaturated with interstitial mercury atoms Hg I [2,3], allowed one to detect defects that did not show their presence before the milling because of electrical compensation [4,5]. The character of post-milling relaxation of electrical properties of MCT allows for identifying background dopants, which are hard to detect using secondary-ion mass-spectroscopy (SIMS) [6].…”

Section: Introductionmentioning

confidence: 99%

Study of the Defect Structure of Hg_1-xCd_xTe Films by Ion Milling

Pociask

Іжнін²,

Ilyina³

et al. 2008

Acta Phys. Pol. A

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A study of the defect structure of heteroepitaxially grown Hg1−xCdxTe (MCT) films was performed with the use of ion milling. Undoped and in situ As-(acceptor) or In-(donor) doped films with x = 0.22, grown by molecular beam epitaxy on GaAs substrates, as-grown and annealed, were subjected to ion milling with subsequent electrical characterization. The results obtained on the MBE films were compared to those acquired on wafers cut from bulk crystals, and on epitaxial films grown by liquid and vapor phase epitaxy. In all the MBE films ion milling revealed a presence of a neutral defect with concentration ≈ 10 17 cm −3 , formed at the stage of the growth. Residual donor concentration in the films was found to be of the order of 10 15 cm −3 , which is typical of high-quality MCT.

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Section: Introductionmentioning

confidence: 99%

Study of the Defect Structure of Hg_1-xCd_xTe Films by Ion Milling

Pociask

Іжнін²,

Ilyina³

et al. 2008

Acta Phys. Pol. A

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“…( 1 4 ) Here κ 0 is the reaction rate constant in the reaction (13). Specifically the reaction (13) is found to be threemolecular if there are no other defects and provided that N 0 >> n i and n=2N 0 .…”

Section: Relaxation Of Carrier Parameters In Damaged N + -Layermentioning

confidence: 97%

“…This observation is especially important since in modern MCT technology it has become a custom to cap the active MCT surface with a thin (~1 µm) wider bandgap protective layer 10,11 in which such dependencies were not observed. On the contrary, a decrease of l n in MCT capped with such a layer has been observed experimentally 13 . The decrease of l n with increasing x is difficult to interpret in kinetic model, if one believes a source of Hg atoms to be the layer milled by the ions from the MCT surface.…”

Section: Introductionmentioning

confidence: 93%

“…An interstitial defect trapped by a dislocation core is assumed to be neutralized according to (13) and is embedded into the crystal lattice causing the dislocation shift. Coincidence of typical relaxation times calculated using (10) and relaxation times of interstitial dislocation loops reported in 18 provides strong confirmation to this interpretation of observable relations.…”

Section: Relaxation Of Carrier Parameters In Damaged N + -Layermentioning

confidence: 99%

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Regularities of the Cd x Hg 1-x Te p-n junction formation by ion milling

Іжнін¹,

Bogoboyashchyy

Sizov

2005

SPIE Proceedings

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The main features of p-n conductivity type conversion by ion milling in vacancy-doped p-Cd x Hg 1-x Te are considered. A diffusion model of the Hg interstitials source formation in MCT crystals under IM was proved through investigation of conversion depth dependence on composition. The model explains, both quantitatively and qualitatively, conversion depth dependencies on the IM temperature and the alloy composition. The most important factor, which defines these dependencies, is an electric field located at the interface between the p-type defect layer and the n-type converted layer and in the grad band region. It was demonstrated that main features of carrier distribution over the p-n structure depth remained after 10 years samples storage. The relaxation of electrical properties of the n-layer main part after IM was explained by dissociation of donor complexes and centers formed by Hg interstitials with residual I and V group acceptor impurities. It was also demonstrated that IM results in forming a complex damaged n + -layer including several sub-layers with different nature of electron conductivity. An analysis of how electrons concentration relax in the n + -layer allows interpreting the nature of conductivity in one sub-layer through trapping mercury interstitials by dislocations and dislocation loops. The conductivity relaxation in this sub-layer occurs because the structure of such defects is rebuilt, with donor properties being lost.

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“…The process of ion-beam modification of both bulk CMT crystals and epitaxial structures grown by various methods, including CMT MBE HES, is studied in detail theoretically and experimentally [5][6][7]. However, the question of the role of a near-surface graded band-gap layer in the formation of n-p transitions in the CMT MBE HES of the p-type is still an open question.…”

Section: Introductionmentioning

confidence: 98%

Defect profiles in graded band-gap layers of P-HgCdTe heteroepitaxial structures under ion-beam etching

et al. 2008

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The results of investigations into spatial distribution of donors in p-HgCdTe graded band-gap layers with various composition profiles in the near-surface layer upon ion-beam etching are reported. It is found that the depth of the resulting n + -layer is weakly dependent on the conditions of ion-beam etching and composition of material of the surface and is about 0.5-1 μm. The electron density in the n + -layer on the surface is observed to increase with time of beam etching. It is shown that the conditions of ion-beam etching and the composition of the near-surface region significantly affect only the depth of the foregoing layer with low electron density. Analysis of experimental data shows that the process of ion-bean etching in p-HgCdTe heteroepitaxial structures with a composition gradient in the near-surface region is different from etching in HgCdTe homogeneous epitaxial structures and crystals.

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Properties of MBE Cd _x Hg _{1−
x} Te/GaAs structures modified by ion‐beam milling

Cited by 15 publications

References 11 publications

Study of the Defect Structure of Hg_1-xCd_xTe Films by Ion Milling

Study of the Defect Structure of Hg_1-xCd_xTe Films by Ion Milling

Regularities of the Cd x Hg 1-x Te p-n junction formation by ion milling

Defect profiles in graded band-gap layers of P-HgCdTe heteroepitaxial structures under ion-beam etching

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Properties of MBE Cd x Hg 1− x Te/GaAs structures modified by ion‐beam milling

Cited by 15 publications

References 11 publications

Study of the Defect Structure of Hg1-xCdxTe Films by Ion Milling

Study of the Defect Structure of Hg1-xCdxTe Films by Ion Milling

Regularities of the Cd x Hg 1-x Te p-n junction formation by ion milling

Defect profiles in graded band-gap layers of P-HgCdTe heteroepitaxial structures under ion-beam etching

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Product

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Properties of MBE Cd _x Hg _{1−
x} Te/GaAs structures modified by ion‐beam milling

Study of the Defect Structure of Hg_1-xCd_xTe Films by Ion Milling

Study of the Defect Structure of Hg_1-xCd_xTe Films by Ion Milling