Properties of Interacting Low‐Dimensional Systems

Gumbs, Godfrey; Huang, Danhong

doi:10.1002/9783527638154

Cited by 50 publications

(76 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The band structure of a crystal largely determines the properties of electrons, (Gumbs and Huang, 2013) such as effective mass, bandgap energy, density of states, plasma frequency and absorption coefficient. These electron properties are a result of the unique crystal potential from all lattice atoms, instead of properties of an individual lattice atom.…”

Section: Radiation Degradation Of Electronic Devicesmentioning

confidence: 99%

“…(Gumbs and Huang, 2013) For an electronic device (e.g., field-effect transistors in an integrated circuit), the momentum-relaxation time of electrons, due to scattering by randomly-distributed defects, plays a crucial role in determining the electron mobility, (Strour et al, 2003) while the photo-excited electron lifetime, due to nonradiative recombination with defects, is proven to be a key factor affecting the sensitivity or the performance of optoelectronic devices (e.g., photo-detectors and lightemitting diodes) (Weatherford and Anderson, 2003).…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Multi-Timescale Microscopic Theory for Radiation Degradation of Electronic and Optoelectronic Devices

Huang¹,

Gao²,

Cardimona³

et al. 2015

American Journal of Space Science

Self Cite

View full text Add to dashboard Cite

A multi-timescale hybrid model is proposed to study microscopically the degraded performance of electronic devices, covering three individual stages of radiation effects studies, including ultra-fast displacement cascade, intermediate defect stabilization and cluster formation, as well as slow defect reaction and migration. Realistic interatomic potentials are employed in molecular-dynamics calculations for the first two stages up to 100 ns as well as for the system composed of layers with thicknesses of hundreds of times the lattice constant. These quasi-steady-state results for individual layers are input into a ratediffusion theory as initial conditions to calculate the steady-state distribution of point defects in a mesoscopic-scale layered-structure system, including planar biased dislocation loops and spherical neutral voids, on a much longer time scale. Assisted by the density-functional theory for specifying electronic properties of point defects, the resulting spatial distributions of these defects and clusters are taken into account in studying the degradation of electronic and optoelectronic devices, e.g., carrier momentum-relaxation time, defect-mediated non-radiative recombination, defect-assisted tunneling of electrons and defect or charged-defect Raman scattering as well. Such theoretical studies are expected to be crucial in fully understanding the physical mechanism for identifying defect species, performance degradations in field-effect transistors, photo-detectors, light-emitting diodes and solar cells and in the development of effective mitigation methods during their microscopic structure design stages.

show abstract

Section: Radiation Degradation Of Electronic Devicesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Multi-Timescale Microscopic Theory for Radiation Degradation of Electronic and Optoelectronic Devices

Huang¹,

Gao²,

Cardimona³

et al. 2015

American Journal of Space Science

Self Cite

View full text Add to dashboard Cite

show abstract

“…20 However, in an open system, 21-28 the time evolution for electronic excitations becomes much more involved since it depends strongly on the Coulomb interaction with the environment (e.g., electron reservoirs). As an example, the classical and quantum dynamical phenomena in open systems include tunnel-coupling to external electrodes, 29 optical-cavity leakage to free space, 30 and thermal coupling to heat baths.…”

Section: 19mentioning

confidence: 99%

“…According to Refs. [20,[69][70][71], the Fourier-transformed nonlocal composite inverse dielectric function can be determined by…”

Section: Hybrid Plasmon Modes and Damping In Open Silicene Systemsmentioning

confidence: 99%

Controlling plasmon modes and damping in buckled two-dimensional material open systems

Iurov

Gumbs

Huang

et al. 2017

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

Full ranges of both hybrid plasmon-mode dispersions and their damping are studied systematically by our recently developed mean-field theory in open systems involving a conducting substrate and a two-dimensional (2D) material with a buckled honeycomb lattice, such as silicene, germanene, and a group IV dichalcogenide as well. In this hybrid system, the single plasmon mode for a free-standing 2D layer is split into one acoustic-like and one optical-like mode, leading to a dramatic change in the damping of plasmon modes. In comparison with gapped graphene, critical features associated with plasmon modes and damping in silicene and molybdenum disulfide are found with various spin-orbit and lattice asymmetry energy bandgaps, doping types and levels, and coupling strengths between 2D materials and the conducting substrate. The obtained damping dependence on both spin and valley degrees of freedom is expected to facilitate measuring the open-system dielectric property and the spin-orbit coupling strength of individual 2D materials. The unique linear dispersion of the acoustic-like plasmon mode introduces additional damping from the intraband particle-hole modes which is absent for a free-standing 2D material layer, and the use of molybdenum disulfide with a large bandgap simultaneously suppresses the strong damping from the interband particle-hole modes.

show abstract

“…The comprehensive reviews of this theoretical technique can be found, for instance, in Refs. [30][31][32]. Within this approach, the evolution of the electron spin S = (S x , S y , S z ) can be described by the diffusion equation, D −1 S = 0, where D is the inverse propagator of the spin density fluctuation, which is also known as a diffuson.…”

Section: Spin Dynamics Of Dressed 2degmentioning

confidence: 99%

Control of spin dynamics in a two-dimensional electron gas by electromagnetic dressing

et al. 2015

View full text Add to dashboard Cite

We solved the Schrödinger problem for a two-dimensional electron gas (2DEG) with the Rashba spin-orbit interaction in the presence of a strong high-frequency electromagnetic field (dressing field). The found eigenfunctions and eigenenergies of the problem are used to describe the spin dynamics of the dressed 2DEG within the formalism of the density matrix response function. Solving the equations of spin dynamics, we show that the dressing field can switch the spin relaxation in the 2DEG between the cases corresponding to the known Elliott-Yafet and D'yakonov-Perel' regimes. As a result, the spin properties of the 2DEG can be tuned by a high-frequency electromagnetic field. The present effect opens an unexplored way for controlling the spin with light and, therefore, forms the physical prerequisites for creating light-tuned spintronics devices.

show abstract

Properties of Interacting Low‐Dimensional Systems

Cited by 50 publications

References 0 publications

Multi-Timescale Microscopic Theory for Radiation Degradation of Electronic and Optoelectronic Devices

Multi-Timescale Microscopic Theory for Radiation Degradation of Electronic and Optoelectronic Devices

Controlling plasmon modes and damping in buckled two-dimensional material open systems

Control of spin dynamics in a two-dimensional electron gas by electromagnetic dressing

Contact Info

Product

Resources

About