Properties of InGaAs/GaAs quantum wells with a δ〈Mn〉-doped layer in GaAs

Аронзон, Б. А.; Granovsky, A. B.; Давыдов, А. Б.; Danilov, Yu. A.; Звонков, Б. Н.; Rylkov, V. V.; Uskova, E. A.

doi:10.1134/s1063783407010271

Cited by 8 publications

(17 citation statements)

References 12 publications

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“…Their magnetic properties are determined mainly by the Mn δ-layer separated from the QW by the 3 nm thick spacer prepared by laser deposition. As it was shown in previous studies [8] optimal spacer thickness is 3 nm. That is because for a thicker spacer the interaction between the carriers and Mn is too weak, while for a thinner spacer Mn penetrates inside the QW.…”

Section: Methodsmentioning

confidence: 74%

“…In spite of the fact that there exists a large number of publications dedicated to (III,Mn)V DMS, investigations of two-dimensional structures are still relatively rare [3,[5][6][7][8]. It is very hard to detect the magnetic moment of a 2D DMS structure by traditional magnetic measurements due to strong paramagnetic signal from the substrate.…”

mentioning

confidence: 95%

“…It is very hard to detect the magnetic moment of a 2D DMS structure by traditional magnetic measurements due to strong paramagnetic signal from the substrate. So up to now the main method for observation of magnetization in a 2D DMS structures is measurement of the anomalous Hall effect [3,[5][6][7][8]. In the majority of previous investigations of this effect in a 2D DMS, the Mn layer was located inside the two-dimensional electron channel [3,[5][6][7], or in spite of the spacer, some amount of Mn or defects had penetrated into the channel as indicated by the low charge carrier mobility (2-5 cm 2 /(V·s) [3]).…”

mentioning

confidence: 99%

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Disorder effects in GaAs/In_xGa_1–xAs/GaAs quantum well delta doped with Mn

Аронзон

Lagutin

Rylkov

et al. 2008

Phys. Status Solidi (c)

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We present results of magnetic and transport measurements of GaAs/Ga1–xInxAs/GaAs quantum well structures containing a Mn δ‐layer separated from the quantum well by a 3 nm spacer. The kink observed in temperature dependence of the sample resistance and anomalous Hall effect give a hint for carrier spin polarization. Magnetization measurements show an unusual shifted hysteresis loop. The observed results are treated in the frame of long range fluctuation potential model. Parameters of the potential are estimated. It is shown that disorder determines the structural properties in spite of the hole mobility of about 2000 cm2/(V·s) being much higher than in presently known ferromagnetic two‐dimensional structures. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Methodsmentioning

confidence: 74%

mentioning

confidence: 95%

mentioning

confidence: 99%

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Disorder effects in GaAs/In_xGa_1–xAs/GaAs quantum well delta doped with Mn

Аронзон

Lagutin

Rylkov

et al. 2008

Phys. Status Solidi (c)

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“…The p-type conductivity in the well was achieved by δ-doping from the buffer side with a carbon layer, separated from the QW by a spacer of thickness d s = 10 nm. A Mn δ-layer separated from the QW by a 3 nm thick spacer was prepared by laser deposition [8]. The buffer layer and the spacers were grown at the temperature of 600 o C, while the deposition of the Mn and cap layers was performed at 450 o C. Schematic cross-section of the samples is shown in Fig.1.…”

Section: Samplesmentioning

confidence: 99%

Magnetic properties of GaAs/δ〈Mn〉/GaAs/In x Ga1 − x As/GaAs quantum wells

et al. 2008

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We report results of investigations of structural and transport properties of GaAs/Ga 1-x In x As/GaAs quantum wells (QWs) having a 0.5-1.8 ML thick Mn layer, separated from the QW by a 3 nm thick spacer. The structure has hole mobility of about 2000 cm 2 /(V·s) being by several orders of magnitude higher than in known ferromagnetic two-dimensional structures. The analysis of the electro-physical properties of these systems is based on detailed study of their structure by means of high-resolution X-ray diffractometry and glancing-incidence reflection, which allow us to restore the depth profiles of structural characteristics of the QWs and thin Mn-containing layers. These investigations show absence of Mn atoms inside the QW. The quality of the structures was also characterized by photo-luminescence spectra from the QWs. Transport properties reveal features inherent to ferromagnetic systems: a specific maximum in the temperature dependence of the resistance and the anomalous Hall effect (AHE) observed in samples with both 'metallic' and activated types of conductivity up to ~ 100 K. AHE is most pronounced in the temperature range where the resistance maximum is observed, and decreases with decreasing temperature. The results are discussed in terms of interaction of 2D-holes and magnetic Mn ions in presence of large-scale potential fluctuations related to random distribution of Mn atoms. The AHE values are compared with calculations taking into account its 'intrinsic' mechanism in ferromagnetic systems.

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“…In relation to the development of spintronics [1][2][3], the attention of researchers is attracted to semicon ductor quantum dimensional heteronanostructures (HNSs) with ferromagnetic layers; in the latter, the spin polarization of nonequilibrium charge carriers is possible. One such structure is represented by a HNS with InGaAs/GaAs quantum wells (QWs), selectively doped with a Mn δ layer located near the QWs.…”

Section: Introductionmentioning

confidence: 99%