Properties of indium tin oxide on black silicon after post-deposition annealing for heterojunction solar cells

Abdulkadir, Auwal; Aziz, Azlan Abdul; Pakhuruddin, Mohd Zamir

doi:10.1016/j.rinp.2020.103405

Cited by 11 publications

(5 citation statements)

References 34 publications

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“…To date, TCO films have been extensively applied in a number of applications such as solar cells, diodes, photodetectors, etc. owing to their attractive optical and electrical behavior [1][2][3][4]. Several TCO films containing impurities such as ZnO, In 2 O 3 , and SnO 2 have been investigated [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

“…Among these, ZnO doped with Al has exhibited thought provoking features in optoelectronic applications [16]. Furthermore, Al-doped ZnO, other materials, and film also revealed high dependence on the utilized preparation/deposition method [2,3,17]. This is particularly due to the occurrence of undesirable contaminations and uncontrolled defects, which in turn 2 of 10 result in a lack of reproducibility and robustness of the target TCO application.…”

Section: Introductionmentioning

confidence: 99%

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In-Depth Optical Analysis of Zn(Al)O Mixed Metal Oxide Film-Based Zn/Al-Layered Double Hydroxide for TCO Application

Salih¹,

Ramizy

Aldaghri

et al. 2022

Crystals

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In this article, an in-depth optical investigation of Zn(Al)O-mixed metal oxide (MMO) film using Zn/Al-layered double hydroxide (LDH) was elucidated through co-precipitation and spin coating techniques. The field emission scanning electron microscopy (FE-SEM) analysis revealed the occurrence of a vertically aligned sheet-like structure with a thickness of 60 nm for pristine LDH, which further reduced to 45 nm after calcination at 300 °C. Additionally, pristine LDH showed multiple optical bandgaps of 5.18, 3.6, and 3.2 eV. Moreover, a good agreement of the obtained optical bandgaps was attained between both utilized methods, ultraviolet-visible light (UV-Vis), and photoluminescence (PL) spectroscopies. The optical bandgap decreased at higher calcination temperatures, which indicates the active role of the applied post-fabrication process on the optical profile of the deposited MMO film/s. The demonstrated transmittance spectra of the deposited MMO films exhibited a transparency between 85% and 95%; this indicates the usefulness and consistency of the proposed film for transparent conductive oxide (TCO) based optoelectronic applications.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

In-Depth Optical Analysis of Zn(Al)O Mixed Metal Oxide Film-Based Zn/Al-Layered Double Hydroxide for TCO Application

Salih¹,

Ramizy

Aldaghri

et al. 2022

Crystals

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“…Transparent conducting oxide (TCO) is a material used as a transparent electrode in light-based devices such as flat-panel displays and solar cells that has a high optical transmittance of more than 80 % in visible light and a resistivity of less than 10 −3 Ω•cm [1][2][3][4][5]. Among TCOs, indium tin oxide (ITO) is the most widely used material at present because it has high optical transmittance and excellent electrical conductivity and is also chemically stable [6][7][8][9][10]. However, as high-efficiency devices such as solar cells, photodiode, and displays have emerged, it has become more important for TCOs to have high transmittance and low resistance simultaneously.…”

Section: Introductionmentioning

confidence: 99%

Improvement of Electrical Properties of Sn-Doped Indium Tin Oxide by In-Situ Annealing

Lee

Kim

2022

Appl. Sci. Converg. Technol.

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We investigated the optical and electrical characteristics of Sn-doped indium tin oxide (ITO) thin films. Bi-layer ITO/Sn film samples were prepared by RF sputtering followed by in-situ annealing. Three different conditions with respect to the Sn layer were prepared on a soda-lime substrate: thickness of 0.0 (only glass substrate), 1.0, and 2.0 nm, respectively. ITO films of 170 and 400 nm thickness were deposited on Sn/soda lime glass successively at a substrate temperature of 260 ∘ C. ITO/Sn bi-layer films were in-situ annealed at both 260 and 400 ∘ C for 30 min under 6 × 10 −6 Torr. We studied the optical and electrical properties of the prepared Sn-doped ITO films under various growth conditions, ITO thickness and Sn thickness, and annealing temperature. The best results were obtained from the ITO (400 nm)/Sn (2.0 nm) bi-layer sample annealed at 400 ∘ C, for which average visible transmittance of ~88 % in a wavelength range of 380-780 nm and a sheet resistance R □ of 5.88 Ω were obtained.

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“…Indium tin oxide (ITO) is an n-type semiconductor oxide [1,2]. In recent years, due to low resistivity combined with high transparency to visible light [3,4], ITO films have been widely used in various technological areas, including flat panel displays [5,6], solar cells [7,8], gas sensors [9,10] and organic light emitting diodes [11,12]. ITO thin films are usually prepared by magnetron sputtering [13], using ITO targets as raw materials.…”

Section: Introductionmentioning

confidence: 99%

Optimization Preparation of Indium Tin Oxide Nanoparticles via Microemulsion Method Using Orthogonal Experiment

Jiang¹,

Liu²,

Zhai³

et al. 2021

Crystals

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Indium tin oxide (ITO), an experimentally friendly transparent conducting oxide (TCO), has attracted great attention in the photoelectric field due to its intrinsically low resistivity and high transparency. In this work, the experimental conditions of preparing ITO nanoparticles using the microemulsion method were optimized by an orthogonal experiment. The optimal experimental conditions were obtained: mass ratio of the surfactant (AEO-3, MOA-5), a co-surfactant (n-propyl alcohol) of 5:3, molar ratio of indium and ammonia of 1:20, calcination temperature of 700 °C and calcination time of 4 h. Subsequently, the influence from process variables on the resistivity was researched systematically. The results demonstrated that the calcination temperature had a great effect on the resistivity; the resistivity reduced from 11.28 to 2.72 Ω·cm with the increase in the calcination temperature from 500 to 700 °C. Ultimately, ITO nanoparticles were prepared and systematically characterized under the optimal experimental conditions. The particles with a size of 60 nm were attributed to the cubic ITO crystal phase and showed low resistivity of 0.3675 Ω·cm. Significantly, ITO nanoparticles with low resistivity were obtained using the microemulsion method, which has potential application in the field of ITO nanoparticle preparation.

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Properties of indium tin oxide on black silicon after post-deposition annealing for heterojunction solar cells

Cited by 11 publications

References 34 publications

In-Depth Optical Analysis of Zn(Al)O Mixed Metal Oxide Film-Based Zn/Al-Layered Double Hydroxide for TCO Application

In-Depth Optical Analysis of Zn(Al)O Mixed Metal Oxide Film-Based Zn/Al-Layered Double Hydroxide for TCO Application

Improvement of Electrical Properties of Sn-Doped Indium Tin Oxide by In-Situ Annealing

Optimization Preparation of Indium Tin Oxide Nanoparticles via Microemulsion Method Using Orthogonal Experiment

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