Properties of indium phosphite and selected compounds under irradiation with swift heavy ions

Didyk, A. Yu.; Khalil, A. S.

doi:10.1134/s1063779610020024

Cited by 12 publications

(3 citation statements)

References 126 publications

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“…According to the cluster‐ion irradiations of InP, a very noticeable amount of radiation damage is produced in InP in the form of defect clusters and ion tracks due to the high electronic energy deposition. [ 50,51 ] With increasing ion fluence, more and more radiation damages are formed, thus leading to the amorphous layers formation, which is in agreement with the Raman results that the proportion of amorphization in irradiated samples increases with increasing ion fluences and ( dE/dx ) e . Thus, both the experimental results and theory proved that the ratio I TO / I LO is a quantitative signature to evaluate the damage scale in irradiated zincblende‐type crystals.…”

Section: Resultssupporting

confidence: 85%

A potential lattice damage scale in swift heavy ion irradiated InP

Zeng

Zhang

et al. 2021

J Raman Spectroscopy

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This article reports a comprehensive study on the damage evolution in InP crystal irradiated by swift heavy ions (SHIs, 129Xe and 209Bi). The damage effects were investigated by means of Raman spectroscopy. An analysis of the TO and LO phonon intensities ratio (ITO/ILO) for a given geometry will yield insights into the lattice quality. A direct comparison of the experimental and theoretical results of ITO/ILO has been discussed in detail. The experimental results show that the intensity ratio ITO/ILO increases with the increased ion fluences and electron energy loss (dE/dx)e. In addition, significant red‐shifts of the LO peak were observed that indicates tensile strain was induced during the energy deposition process. Theoretical analysis suggests that defects and disorders generated in the crystals strongly contribute to the intensity ratio ITO/ILO. By TEM observation, we obtained direct evidence that the proportion of disorders and amorphization is proportional to the (dE/dx)e of incident ions, which further confirms that the ITO/ILO ratio measured by Raman spectroscopy is function of irradiation‐induced damages. Therefore, the variation in the intensity ratio ITO/ILO can be used as a nondestructive tool to evaluate the lattice damages in zincblende‐type crystals.

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Section: Resultssupporting

confidence: 85%

A potential lattice damage scale in swift heavy ion irradiated InP

Zeng

Zhang

et al. 2021

J Raman Spectroscopy

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“…Tracks are quasi-continuous when using 930 MeV 208 Pb (S e = 46 keV nm -1 ). Track discontinuity just above S th e could be induced by two different physical phenomena: statistical fluctuations of the energy loss processes [13] and, as it occurs in nanowires, a hydrodynamic instability of ion tracks below a given radius (Raleigh instability) [63][64][65].…”

Section: Ganmentioning

confidence: 99%

Track formation in III-N semiconductors irradiated by swift heavy ions and fullerene and re-evaluation of the inelastic thermal spike model

et al. 2015

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International audienceAlN, GaN, and InN were irradiated at room temperature with monatomic swift heavy ions and high-energy fullerenes. Ion track formation was studied using transmission electron microscopy in both plane view and cross-sectional modes. A full experimental description of ion track formation in these compounds is presented. AlN shows a remarkable resistance towards track formation; InN is the most sensitive and shows partial decomposition, likely into N-2 and metallic clusters; the overlapping of the amorphous tracks in GaN does not give an amorphous layer because of a track-induced recrystallization. We discuss the application of the inelastic thermal spike model, which allows good and simple predictions of track radii in oxides, to the studied III-nitrides, and in general to semiconductors

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“…Existing studies demonstrate that heavy ion irradiation can change the structure of the material [22,23], which may affect the physical properties of the material [24][25][26]. The radiation characteristics of InP has been explored [27][28][29][30][31][32].…”

Section: Introductionmentioning

confidence: 99%

Nonlinear behavior of microwave semiconductor materials measured under a strong electromagnetic environment using a compressed rectangular resonant cavity

Gao

Zhang

et al. 2017

Appl. Phys. A

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The dielectric property of microwave semiconductor materials is investigated under a strong electromagnetic field environment through a compressed rectangular cavity around the frequency of 2.45G. It is demonstrated that the dielectric property of indium phosphate (InP), a kind of microwave semiconductor material, changes when a larger power is injected into the designed cavity. The injected power changes the strength of the electric field in the cavity. Measurement results show that InP has an obvious nonlinear dielectric property when a strong electromagnetic field acts on the material. According to effective experimental method and theoretical analysis, we conclude that the nonlinear behavior is not caused by microwave heating, but caused by the material's inherent nonlinearity.

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Properties of indium phosphite and selected compounds under irradiation with swift heavy ions

Cited by 12 publications

References 126 publications

A potential lattice damage scale in swift heavy ion irradiated InP

A potential lattice damage scale in swift heavy ion irradiated InP

Track formation in III-N semiconductors irradiated by swift heavy ions and fullerene and re-evaluation of the inelastic thermal spike model

Nonlinear behavior of microwave semiconductor materials measured under a strong electromagnetic environment using a compressed rectangular resonant cavity

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