Properties of high-power Cryo-MOSFETs

Review of the State-of-the-Art in Power Electronics Suitable for 10-KW Military Power Systems

“…Thus for a 60-kVA converter operating into a resistive load with f =10 kHz, at 750 V, 82 A rms , Jackson [38] At 77 K, the values for rise and fall times become shorter by a factor of 2-5, reducing the switching losses to 1-2 W [38]. Another important finding is the improvement in rise and fall times, particularly due to the driver circuit [39]. Thus the switching loss can be further decreased by improved gate drive circuit design.…”

“…It has been reported that power MOSFETs have significantly lower on-resistance at cryogenic temperatures. Mueller [39] has shown that the drain-source resistance, R ds , of a power MOSFET, e.g., the APT6018LNR, rated at 600 V and 35 A, drops by about a factor of 10, from 150 mΩ at ambient to only 15 mΩ at 77 K, as shown in Fig. 5.4.…”

“…At this point, the invention of power devices that operate at cryogenic temperatures is still in an early stage. More research has been focused on examining the behavior of existing ambient power electronics device at low temperature [37][38][39][40][41][42][43][44][45]. The inventory of examined devices divides into minority carrier groups (SCRs, GTOs and power transistors), majority carrier MOSFETs, and the IGBT-MCT hybrids.…”

“…The switching characteristics of MOSFETs at LNT, such as turn-on, turn-off delays, and rise and fall times have been reported in the literature [39,44,45]. Unfortunately, these results correspond to specific test conditions and to a resistive load.…”