Properties of Ge-doped, high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxy

Oshima, Yuki; Yoshida, Takehiro; Watanabe, Kazutoshi; Mishima, Tomoyoshi

doi:10.1016/j.jcrysgro.2010.09.036

Cited by 54 publications

(45 citation statements)

References 10 publications

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“…1(b). Data for our GaN substrates grown by using the standard HVPE system with Si and Ge doping 17,18) as well as Nakamura's MOCVD-grown n-GaN layer on sapphire 10) are also shown for comparison. The HVPE-grown freestanding substrate possessed a slightly higher mobility than that of the MOCVD-grown sample on the sapphire substrate.…”

Section: Si-doping Characteristics Of High-purity Gan Layers Fabricatmentioning

confidence: 99%

“…The development of freestanding GaN substrates with a low threading dislocation density (TDD) by several groups, including ours, [16][17][18][19][20][21][22][23][24][25][26] has markedly changed this situation, and researches on GaN-based power devices using such substrates are now accelerating. 4,5,[27][28][29] Among the various methods for the growth of freestanding GaN substrates, hydride-vaporphase epitaxy (HVPE) is the most well established, and wafers with diameters of 2-in.…”

Section: Introductionmentioning

confidence: 99%

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Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Fujikura

Konno

Yoshida

et al. 2017

Jpn. J. Appl. Phys.

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Thick (20–30 µm) layers of highly pure GaN with device-quality smooth as-grown surfaces were prepared on freestanding GaN substrates by using our advanced hydride-vapor-phase epitaxy (HVPE) system. Removal of quartz parts from the HVPE system markedly reduced concentrations of residual impurities to below the limits of detection by secondary-ion mass spectrometry. Appropriate gas-flow management in the HVPE system realized device-quality, smooth, as-grown surfaces with an excellent uniformity of thickness. The undoped GaN layer showed insulating properties. By Si doping, the electron concentration could be controlled over a wide range, down to 2 × 1014 cm−3, with a maximum mobility of 1150 cm2·V−1·s−1. The concentration of residual deep levels in lightly Si-doped layers was in the 1014 cm−3 range or less throughout the entire 2-in. wafer surface. These achievements clearly demonstrate the potential of HVPE as a tool for epitaxial growth of power-device structures.

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Section: Si-doping Characteristics Of High-purity Gan Layers Fabricatmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Fujikura

Konno

Yoshida

et al. 2017

Jpn. J. Appl. Phys.

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“…Hydride vapor phase epitaxy (HVPE) growth is a promising candidate for growing bulk GaN because of its high growth rate. 24,25 Several groups have artificially fabricated dot-patterns and grown seed layers by the HVPE method to improve crystallinity. [26][27][28] GaN substrates grown by HVPE methods have high crystalline quality; however, freestanding GaN substrates feature lattice curvature owing to internal stresses, such as compressive and tensile stress.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of lattice curvature and crystalline homogeneity for 2-inch GaN homo-epitaxial layer

et al. 2018

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We evaluated the lattice curvature, crystallinity, and crystalline homogeneity of a GaN layer on a free standing GaN substrate using lattice orientation measurements, θ rocking curves, and reciprocal space mapping from synchrotron X-ray diffraction topography, and X-ray diffraction. The lattice curvature of the 2-inch GaN homo-epitaxial layer was a concave bend, which had a curvature radius of approximately 20.7 m. The GaN layer was epitaxially grown on the GaN substrate and had good crystallinity with a high homogeneity.

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“…cm at room temperature should be obtained. On the other hand, high-quality HVPE-GaN with a free carrier concentration of the order of 5x10 18 cm -3 should be also fabricated by the technology similar to that presented by by Oshima et al 34 The n-type doping in GaN crystal technology is solved in HNPS-MFS-GaN crystallization (due to a presence of oxygen in the Ga solution). Therefore, it is relatively easy to obtain n-type crystals with free carrier concentration of the level of 5x10 19 cm -3 .…”

Section: Discussionmentioning

confidence: 99%

Bulk GaN and its application as substrates in building quantum nanostructures for some electronic and optoelectronic devices

Boćkowski

2014

SPIE Proceedings

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The use of GaN crystals grown by three methods (and their combinations): Hydride Vapor Phase Epitaxy (HVPE), high nitrogen pressure solution (HNPS) and ammonothermal method for optoelectronic (laser diodes) and electronic (transistors) devices is presented. After a brief review on the development of the three crystallization methods, the GaN crystals' uniform and unique properties, which allow to use them as substrates for building devices, are shown. The Metal Organic Vapor Phase Epitaxy (MOCVD) and Molecular Beam Epitaxy (MBE) technologies for growing the nitride quantum nanostructures as well as the structures' properties and processing of devices are demonstrated. Future challenges and perspectives for application of bulk GaN as substrates in building quantum nanostructures for some electronic and optoelectronic devices are discussed.

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Properties of Ge-doped, high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxy

Cited by 54 publications

References 10 publications

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Evaluation of lattice curvature and crystalline homogeneity for 2-inch GaN homo-epitaxial layer

Bulk GaN and its application as substrates in building quantum nanostructures for some electronic and optoelectronic devices

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