Properties of gallium-doped ZnO deposited onto glass by spray pyrolysis

Tiburcio‐Silver, A.; Sánchez-Juárez, A.; Ávila-García, A.

doi:10.1016/s0927-0248(98)00040-3

Cited by 64 publications

(25 citation statements)

References 16 publications

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“…3. The refractive index n of IZO film (n = 1.70-2.01) in the visible region is identically to those obtained by Tibercio-Silver et al [34] Similar trend has be obtained by other authors [11,28]. At 4%, the increase in n might be explained by the important disorder in the films [28].…”

Section: Optical Propertiessupporting

confidence: 89%

The effect of indium doping on structural, electrical conductivity, photoconductivity and density of states properties of ZnO films

Benouis

Benhaliliba

Juárez

et al. 2010

Journal of Alloys and Compounds

114

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Section: Optical Propertiessupporting

confidence: 89%

The effect of indium doping on structural, electrical conductivity, photoconductivity and density of states properties of ZnO films

Benouis

Benhaliliba

Juárez

et al. 2010

Journal of Alloys and Compounds

114

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“…However, the intensity of the peak (1 0 0) increases slowly throughout with increase in doping concentration. Similar results of change in preferential orientation had earlier been reported for Zr-doped ZnO films prepared by sol-gel method and Ga-doped ZnO films prepared by spray pyrolysis [17,18].…”

Section: Experimental Prceduresupporting

confidence: 88%

Structural, electrical and optical studies on spray-deposited aluminium-doped ZnO thin films

Tewari

Bhattacharjee

2011

Pramana - J Phys

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Thin films of zinc oxide (ZnO) were deposited on cleaned glass substrates by chemical spray pyrolysis technique using Zn(CH3COO)2 as precursor solution. Also, aluminium-doped thin films of ZnO were prepared by using AlCl3 as doping solution for aluminium. The dopant concentration [Al/Zn atomic percentage (at%)] was varied from 0 to 1.5 at% in thin films of ZnO prepared in different depositions. Structural characterization of the deposited films was performed with X-ray diffraction (XRD) studies. It confirmed that all the films were of zinc oxide having polycrystalline nature and possessing typical hexagonal wurtzite structure with crystallite size varying between 100.7 and 268.6 nm. The films exhibited changes in relative intensities and crystallite size with changes in the doping concentration of Al. The electrical studies established that 1 at% of Aldoping was the optimum for enhancing electrical conduction in ZnO thin films and beyond that the distortion caused in the lattice lowered the conductivity. The films also exhibited distinct changes in their optical properties at different doping concentrations, including a blue shift and slight widening of bandgap with increasing Al dopant concentration.

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“…It has been observed that on doping the intensity of (002) peak decreases as the Al-dopant concentration increases while those of (100) and (101) peaks increase. Such type of variation in diffraction peak intensities has been reported earlier also in the case of Zrdoped ZnO films prepared by sol-gel method and Ga-doped ZnO films prepared by spray pyrolysis [17,18]. The intensities ratios of (100)/(002) and (101)/(002) are listed in table 2.…”

supporting

confidence: 74%

Growth, structure and optical characterization of Al‐doped ZnO nanoparticle thin films

Prajapati

Sahay

2011

Cryst. Res. Technol.

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Al-doped ZnO nanoparticle thin films were prepared on glass substrate at the optimum temperature of (410±10) °C by spray pyrolysis technique using zinc nitrate as a precursor solution and aluminium chloride as a dopant. The dopant concentration (Al/Zn at%) was varied from 0 to 2 at%. Structural analysis of the films shows that all the films are of polycrystalline zinc oxide in nature, possessing hexagonal wurtzite structure. The films exhibit variation in peak intensities corresponding to (100), (002) and (101) reflection planes on Aldoping. The crystallite size calculated by Scherrer formula has been found to be in the range of 35-65 nm. The optical absorption study shows that the optical band gap in the Al-doped films varies in the range of 3.11 -3.22 eV. The width of localized states in the band gap estimated by the Urbach tail analysis has been found to be minimum in case of the 1 at% Al-doped zinc oxide thin film.

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Properties of gallium-doped ZnO deposited onto glass by spray pyrolysis

Cited by 64 publications

References 16 publications

The effect of indium doping on structural, electrical conductivity, photoconductivity and density of states properties of ZnO films

The effect of indium doping on structural, electrical conductivity, photoconductivity and density of states properties of ZnO films

Structural, electrical and optical studies on spray-deposited aluminium-doped ZnO thin films

Growth, structure and optical characterization of Al‐doped ZnO nanoparticle thin films

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