1998
DOI: 10.1016/s0927-0248(97)00246-8
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Properties of fluorine-doped ZnO deposited onto glass by spray pyrolysis

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Cited by 102 publications
(24 citation statements)
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“…1g and h) the intensity of (002) diffraction peak decreases in the XRD pattern. A similar behavior is observed by [21].…”
Section: Methodssupporting
confidence: 86%
“…1g and h) the intensity of (002) diffraction peak decreases in the XRD pattern. A similar behavior is observed by [21].…”
Section: Methodssupporting
confidence: 86%
“…ZnO is a wide band gap n-type semiconductor, E g =3.3 eV at room temperature, with hexagonal wurtzite structure, and a large exciton binding energy of 60 meV [1][2][3]. In order to improve the physical properties of ZnO, many elements such as aluminum (Al), tin (Sn), indium (In) and fluorine (F) and many others have been used as dopants [1][2][3][4][5]. The synthesis of nanostructures has been of growing interest owing to their promising application in nanoscale optoelectronic devices, like the next generation solar cells [6][7].…”
Section: Introductionmentioning
confidence: 99%
“…25 Due to the high activation energy of donor F O ͑0.762 eV͒, the increase in carrier concentration and mobility of ZnO:F could not attribute to the electrons from donor F O . 26 Both F O and F i in ZnO could cause the noncentrosymmetric charge density distribution which may lead to the enhancement of the linear electro-optics effect. Fluorine ions at grain boundaries could cause surface passivation effect by saturating these dangling bonds and thus increase carrier concentration and mobility.…”
mentioning
confidence: 99%