Properties of CVD alumina–titania composite films grown at different CO2/H2 inputs

Growth and Characterization of Reactive DC Magnetron Sputtered Aluminum Titanate Thin Films

“…The optical transmittance of about 80 % was noticed in low pressure chemical vapor deposited and International Letters of Chemistry, Physics and Astronomy Vol. 61sputter deposited AlTiO films [9][10][11]. Fundamental absorption edge shifted to higher wavelength side with annealing temperature.…”

“…Among these materials, aluminum titanate(Al 2 TiO 5 ) is a high-k dielectric with good radio frequency performance. Thin films of Al 2 TiO 5 have been deposited by various techniques such as thermal oxidation of Al/Ti bilayer formed by vacuum evaporation [8], reactive sputtering [9], Low pressure chemical vapor deposition [10,11], nanoparticle achieved by sol-gel process [12,13]. The thermally oxidized AlTiO x thin film MIM capacitors exhibited capacitance density of about 1μF/cm 2 and high leakage current density of about 10 -4 A/cm 2 due to deficiency of oxygen in the films [8].…”

“…The thermally oxidized AlTiO x thin film MIM capacitors exhibited capacitance density of about 1μF/cm 2 and high leakage current density of about 10 -4 A/cm 2 due to deficiency of oxygen in the films [8]. Sputter deposited Al 2 TiO 5 films are used as semitransparent silicon thin film solar cell useful for building integrated photovoltaic system [9], Low pressure chemical vapor deposition films formed were amorphous and their refractive index decreased from 1.92 to 1.78 and the dielectric constant decreased with increase of substrate temperature from 350 o C to 500 o C [10,11] respectively. Further annealing of films as temperature to 800 o C resulted the enhanced dielectric properties [11].…”

“…Sputter deposited Al 2 TiO 5 films are used as semitransparent silicon thin film solar cell useful for building integrated photovoltaic system [9], Low pressure chemical vapor deposition films formed were amorphous and their refractive index decreased from 1.92 to 1.78 and the dielectric constant decreased with increase of substrate temperature from 350 o C to 500 o C [10,11] respectively. Further annealing of films as temperature to 800 o C resulted the enhanced dielectric properties [11]. In this investigation, an attempt is made in the deposited of Al 2 TiO 5 thin films by DC reactive magnetron sputtering and annealed in oxygen atmosphere at temperature of 600 o C, and studies their structural and optical properties.…”

Preparation of nanostructured Al2O3–TiO2 composite films by MOCVD

“…The deposition of TiO 2 on nanozised powders of Al 2 O 3 or alternatively, the formation of Al 2 O 3 -TiO 2 nanocomposite powders have been investigated by the sol-gel method over the last decade [11][12]. The synthesis of Al 2 O 3 -TiO 2 composite films by using the chemical vapor deposition (CVD) method has been more recent [13][14]. So far, the CVD Al 2 O 3 -TiO 2 composite films have been prepared by using traditional Al and Ti chloride precursors and the resulting films have been amorphous in nature [14].…”