Properties of carbon nitride films produced by an inductively coupled plasma chemical vapor deposition

Lee, D.K.; Kang, Dongseok; Lee, H.Y.; Lee, J.J.

doi:10.1016/j.surfcoat.2004.08.197

Cited by 3 publications

(1 citation statement)

References 23 publications

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“…According to a large number of publications [2][3][4][5][6][7][8][9], CN x films are proved to be amorphous and the nitrogen content is far from the stoichiometric concentration (~57 at.%). Moreover, the mechanical properties of the films fluctuate in a large scale [10][11][12][13] and the thermal stability is poor due to its low decomposition temperature [14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Microstructure and mechanical properties of a-CN x films prepared by bias voltage assisted PLD with carbon nitride target

Zheng

Yang

Chen

et al. 2014

Surface and Coatings Technology

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Amorphous carbon nitride (a-CN x ) films were deposited on silicon substrates using pulsed laser deposition technique (PLD) with a carbon nitride target and a negative bias voltage up to −120 V. The microstructure, chemical composition, bonding configuration and mechanical properties of the films were characterized by using scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, nanoindentation and ball-on-disc abrasion test. The results show that the negative bias voltage promotes the formation of sp 3 hybridization bonding and leads to a great improvement of nitrogen content (up to 38 at.%) in the films. With an increasing bias voltage from −40 V to −120 V, the nitrogen content and the fraction of sp 3 hybridization bonding decrease, leading to an increase in graphitization of the films. A direct dependence of the hardness on the content of sp 3 hybridization bonding is observed. The friction coefficient of the films ranges from 0.20 to 0.28. The film deposited at a bias voltage of −40 V presents the highest hardness value of 8.3 GPa.

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Section: Introductionmentioning

confidence: 99%

Microstructure and mechanical properties of a-CN x films prepared by bias voltage assisted PLD with carbon nitride target

Zheng

Yang

Chen

et al. 2014

Surface and Coatings Technology

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Preliminary Synthesis of Carbon Nitride Thin Films by N2/CH4 Microwave Plasma Assisted Chemical Vapour Deposition: Characterisation of the Discharge and the Obtained Films

Kouakou

Brien

Assouar

et al. 2007

Plasma Process. Polym.

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The present work deals with the synthesis of crystalline carbon nitride thin films by microwave plasma assisted chemical vapour deposition in N2/CH4 gas mixture. The discharge analysis by optical emission spectroscopy shows that the increase in the CH4/N2 ratio involves an important production of the CN and C2 radicals. In the films the X‐ray energy dispersion spectroscopy shows that the N/C ratio decreases when the CH4 percentage in N2 increases. X‐Ray diffraction and electron diffraction are used to study the carbon nitride films nature. Scanning electron microscopy shows that the films consisted of nanocrystalline grains. Carbon balls are also present on the film surface for CH4 percentage higher than 4%. The transmission electron microscopy confirms the nanostructure of the film and shows the isotropic etching of the substrates, during the film growth.

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Preparation of carbonitride films in the active and afterglow phases of a glow discharge

Grigorian

Кочетов

2013

Plasma Phys. Rep.

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Properties of carbon nitride films produced by an inductively coupled plasma chemical vapor deposition

Cited by 3 publications

References 23 publications

Microstructure and mechanical properties of a-CN x films prepared by bias voltage assisted PLD with carbon nitride target

Microstructure and mechanical properties of a-CN x films prepared by bias voltage assisted PLD with carbon nitride target

Preliminary Synthesis of Carbon Nitride Thin Films by N2/CH4 Microwave Plasma Assisted Chemical Vapour Deposition: Characterisation of the Discharge and the Obtained Films

Preparation of carbonitride films in the active and afterglow phases of a glow discharge

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