2008
DOI: 10.1016/j.tsf.2007.03.090
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Properties of BGO thin films under the influence of gamma radiation

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Cited by 23 publications
(11 citation statements)
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“…When the BGO sample is obtained at 480°C, a sharp peak appears at 2h = 26.83 o which is characteristic to the partial crystallization to [310] for the BGO structure (ICSD card No. 84-0505) [5]. Tentatively, from the X-ray diffraction pattern of the sample obtained at 480°C, the grain size of BGO can be calculated using the Debye-Scherrer formula:…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…When the BGO sample is obtained at 480°C, a sharp peak appears at 2h = 26.83 o which is characteristic to the partial crystallization to [310] for the BGO structure (ICSD card No. 84-0505) [5]. Tentatively, from the X-ray diffraction pattern of the sample obtained at 480°C, the grain size of BGO can be calculated using the Debye-Scherrer formula:…”
Section: Discussionmentioning
confidence: 99%
“…Their structural properties are a new field which has been poorly explored and exploited. There are other techniques for obtaining BGO materials, glasses or glass-ceramics, like a thin films deposited by an excimer pulsed laser ablation [4], vacuum thermal coating [5] followed by radiation-induced partial crystallization [6] and laser-sintered ceramics in scintillation devices [7].…”
Section: Introductionmentioning
confidence: 99%
“…These types of changes could be used as monitors for exposure. For example, Bi 4 Ge 3 O 12 (BGO) films have shown a linear increase in capacitance after the threshold of ~1.8 mGy was reached [12]. Likewise, many other examples in both ferromagnetic [13] and ferroelectric [14] materials could be given where radiation-induced changes were quasi-permanent until annealed at high temperature.…”
Section: Figure 2: Simulated Distributions Of Pulse Amplitudes (Ie mentioning
confidence: 99%
“…The effect of γ-radiation on the optical and the electrical properties of manganese phthalocyanine thick film was investigated for dosimetry applications [14]. Optical properties of bismuth germinate (Bi 4 Ge 3 O 12 -BGO) thin films under the influence of gamma radiation have been investigated [15].…”
Section: Introductionmentioning
confidence: 99%