Properties of BaxSr1−x TiO3 films grown by rf magnetron sputtering on sapphire with an SrTiO3 sublayer

Hollmann, E. K.; Gol’drin, V. I.; Loginov, V. E.; Prudan, A. M.; Zemtsov, A. V.

doi:10.1134/1.1262549

Cited by 5 publications

(1 citation statement)

References 2 publications

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“…Experimental voltage capacitance characteristics for planar ferroelectric varactors [6,7] and a substrate temperature of T S = 900 • C [8]. The film thickness is about 0.8 µm.…”

Section: Methodsmentioning

confidence: 99%

Conservation of Permittivity and Tunability of Ferroelectrics Over Temperature

Prudan

Kozyrev

Zemtsov

et al. 2003

Integrated Ferroelectrics

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The existence of an intersection point of electric field strength dependencies of permittivity of ferroelectrics at different temperatures is theoretically described by Ginzburg-Devonshire (GD) theory and experimentally confirmed by studying (Ba 0.3 Sr 0.7 )TiO 3 (BSTO) and SrTiO 3 (STO) thin film varactors. GD analysis enables one to propose a way to improve the thermal stability of ferroelectric microwave devices. In particular, parameters of a L-band digital (0 • /180 • ) phase-shifter fabricated from thick BSTO film varactors were stabilized in the temperature range T = (210-310) K by application of variable to DC control voltages.

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“…Experimental voltage capacitance characteristics for planar ferroelectric varactors [6,7] and a substrate temperature of T S = 900 • C [8]. The film thickness is about 0.8 µm.…”

Section: Methodsmentioning

confidence: 99%

Conservation of Permittivity and Tunability of Ferroelectrics Over Temperature

Prudan

Kozyrev

Zemtsov

et al. 2003

Integrated Ferroelectrics

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Electric field stabilization for temperature driven variation of permittivity in ferroelectric devices

Prudan

Kozyrev

Osadchy

et al. 2005

Applied Physics Letters

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The Ginzburg–Devonshire phenomenological approach is used to define the correlation between temperature and electric field magnitudes required to keep permanent values of permittivity of ferroelectrics in rather broad range of operating temperatures. The existence of a crossover of the electric field dependencies for ε at different temperatures is demonstrated theoretically. It makes it possible to establish the upper limit of electrical field strength necessary to provide the thermal stability of ferroelectric devices. Theoretical results have been confirmed experimentally with (Ba,Sr)TiO3 thin film measurements.

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Polycrystalline Ba0.6Sr0.4TiO3 thin films on r-plane sapphire: Effect of film thickness on strain and dielectric properties

Fardin

Holland

Ghorbani

et al. 2006

Applied Physics Letters

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Polycrystalline Ba 0.6 Sr 0.4 TiO 3 ͑BST͒ films grown on r-plane sapphire exhibit strong variation of in-plane strain over the thickness range of 25-400 nm. At a critical thickness of ϳ200 nm, the films are strain relieved; in thinner films, the strain is tensile, while compressive strain was observed in the 400 nm film. Microwave properties of the films were measured from 1 to 20 GHz by the interdigital capacitor method. A capacitance tunability of 64% was observed in the 200 nm film, while thinner films showed improved Q factor. These results demonstrate the possibility of incorporating frequency agile BST-based devices into the silicon on sapphire process.

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Properties of BaxSr1−x TiO3 films grown by rf magnetron sputtering on sapphire with an SrTiO3 sublayer

Cited by 5 publications

References 2 publications

Conservation of Permittivity and Tunability of Ferroelectrics Over Temperature

Conservation of Permittivity and Tunability of Ferroelectrics Over Temperature

Electric field stabilization for temperature driven variation of permittivity in ferroelectric devices

Polycrystalline Ba0.6Sr0.4TiO3 thin films on r-plane sapphire: Effect of film thickness on strain and dielectric properties

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