Properties of aluminum gallium arsenide

Brozel, M.R.

doi:10.1016/0961-1290(93)90154-g

Cited by 15 publications

(20 citation statements)

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“…The expected lattice rotations and strains for an infinitely long 2D dislocation in a thin membrane were modelled by superimposing 2D plane strain anisotropic elasticity solutions for dislocations in an infinite medium 1 and a finite element calculation to solve the boundary value problem 35 (see Supplementary Figs S2 and S3). The misfit dislocation was assumed to lie in the mid-plane of the membrane, the presence of the InGaAs layer was neglected and GaAs was assumed to be anisotropically elastic with cubic symmetry 36,37 . The origin of this orientation change is similar to that in a tilt boundary 38 .…”

Section: Resultsmentioning

confidence: 99%

X-ray micro-beam characterization of lattice rotations and distortions due to an individual dislocation

et al. 2013

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Understanding and controlling the behaviour of dislocations is crucial for a wide range of applications, from nano-electronics and solar cells to structural engineering alloys. Quantitative X-ray diffraction measurements of the strain fields due to individual dislocations, particularly in the bulk, however, have thus far remained elusive. Here we report the first characterization of a single dislocation in a freestanding GaAs/In 0.2 Ga 0.8 As/GaAs membrane by synchrotron X-ray micro-beam Laue diffraction. Our experimental X-ray data agrees closely with textbook anisotropic elasticity solutions for dislocations, providing one of few experimental validations of this fundamental theory. On the basis of the experimental uncertainty in our measurements, we predict the X-ray beam size required for threedimensional measurements of lattice strains and rotations due to individual dislocations in the material bulk. These findings have important implications for the in situ study of dislocation structure formation, self-organization and evolution in the bulk.

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Section: Resultsmentioning

confidence: 99%

X-ray micro-beam characterization of lattice rotations and distortions due to an individual dislocation

et al. 2013

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“…In figure 2(b) the observed frequencies are compared with the computed dispersion relation of the folded LA phonon branch in the mini-Brillouin zone [12]. We used acoustic velocities of 4719 ms −1 and 5718 ms −1 for GaAs and AlAs respectively [27,28]. To match the experimentally observed frequencies at 296 K the GaAs layer thickness was adjusted to 12.9 nm, whilst the AlAs layer thickness was maintained at the nominal 2.0 nm.…”

Section: Data Interpretation and Resultsmentioning

confidence: 99%

Intrinsic to extrinsic phonon lifetime transition in a GaAs–AlAs superlattice

Hofmann

Garg

Maznev

et al. 2013

J. Phys.: Condens. Matter

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We have measured the lifetimes of two zone-center longitudinal acoustic phonon modes, at 320 and 640 GHz, in a 14 nm GaAs/2 nm AlAs superlattice structure. By comparing measurements at 296 and 79 K we separate the intrinsic contribution to phonon lifetime determined by phonon-phonon scattering from the extrinsic contribution due to defects and interface roughness. At 296 K, the 320 GHz phonon lifetime has approximately equal contributions from intrinsic and extrinsic scattering, whilst at 640 GHz it is dominated by extrinsic effects. These measurements are compared with intrinsic and extrinsic scattering rates in the superlattice obtained from first-principles lattice dynamics calculations. The calculated room-temperature intrinsic lifetime of longitudinal phonons at 320 GHz is in agreement with the experimentally measured value of 0.9 ns. The model correctly predicts the transition from predominantly intrinsic to predominantly extrinsic scattering; however the predicted transition occurs at higher frequencies. Our analysis indicates that the 'interfacial atomic disorder' model is not entirely adequate and that the observed frequency dependence of the extrinsic scattering rate is likely to be determined by a finite correlation length of interface roughness.

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“…[82, 35, 84–86, 226, 401–425], and cubic crystals are found in Refs. [98, 354, 420, 352, 426–498]. These compiled bibliographies, selected from a vast literature, are more germane to the specific topics discussed in this paper.…”

Section: Application To Cubicsmentioning

confidence: 99%

Acoustic properties of piezoelectric cubic crystals

Ballato

2023

Int J Ceramic Engine & Sci

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This paper is offered as a complementary adjunct to the many treatments of the electronic and photonic properties of cubic III–V and II–VI compounds appearing in the literature. These crystals typically exhibit piezoelectricity, due to the molecular dissymmetry, thereby allowing the inclusion of classical mechanical/acoustic features along with the quantum. We discuss the history of this modality and then illustrate its use by applying it to an electro‐elastic problem that has the estimable virtues of having an exact solution, along with wide practical applicability: determination of the piezocoupling values governing the excitation of thickness vibrations in thin cubic films or plates of arbitrary crystallographic orientation by electric fields directed either along, or lateral to, the thickness. Explicit results are given for orientations along the great‐circle paths connecting the principal directions [100], [110], and [111]. The formalism is then applied to GaAs as an example; it is further demonstrated that various results, such as the orientational variations of piezocoupling factors, are generally applicable to other members of the III–V and II–VI families by scaling. Ancillary aspects, such as errors due to misorientations, nonlinearities, and equivalent circuit representations, are described and discussed. This work is dedicated to Gerald W. Farnell (1925–2015), Prof. Emeritus, McGill University, Montréal, Canada.

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Properties of aluminum gallium arsenide

Cited by 15 publications

References 0 publications

X-ray micro-beam characterization of lattice rotations and distortions due to an individual dislocation

X-ray micro-beam characterization of lattice rotations and distortions due to an individual dislocation

Intrinsic to extrinsic phonon lifetime transition in a GaAs–AlAs superlattice

Acoustic properties of piezoelectric cubic crystals

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