Properties of Al-doped ZnS Films Grown by Chemical Bath Deposition

Nagamani, K.; Prathap, P.; Lingappa, Yekula; Miles, Robert; Reddy, Kotte Ramakrishna

doi:10.1016/j.phpro.2012.03.062

Cited by 53 publications

(22 citation statements)

References 12 publications

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“…Meanwhile, the calculated conductivity of 6.25% Aldoped ZnS at 300 K is 3830 S · cm −1 at n = 1.0 × 10 21 cm −3 and 1905 S · cm −1 at n = 1.0 × 10 20 cm −3 . This is comparable to the reported conductivity of 1000 − 5000 S · cm −1 for AZO synthesized with n = 0.5 − 1.0 × 10 21 cm −3 49 , but much higher than the corresponding values of 0.042 S · cm −1 19 and 10 −3 S · cm −1 reported for AZS films 48 . Again, we believe this discrepancy can be primarily attributed to the presence of the polycrystallinity and the mixed phases present in the experimentally synthesized samples discussed here, and secondarily due to the errors in the DFT calculations reflected in the underestimation of the effective mass and concomitant overestimation of the calculated conductivity at n = 10 14 cm −3 ( Figure 4).…”

Section: Effective Masssupporting

confidence: 81%

Alloying ZnS in the hexagonal phase to create high-performing transparent conducting materials

Faghaninia

Bhatt

2016

Phys. Chem. Chem. Phys.

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Alloyed zinc sulfide (ZnS) has shown promise as a relatively inexpensive and earth-abundant transparent conducting material (TCM). Though Cu-doped ZnS has been identified as a highperforming p-type TCM, the corresponding n-doped ZnS has, to date, been challenging to synthesize in a controlled manner; this is because the dopant atoms compete with hole-inducing zinc vacancies near the conduction band minimum as the most thermodynamically stable intrinsic point defects. We thus aim to identify the most promising n-type ZnS-based TCM, with the optimal combination of physical stability, transparency, and electrical conductivity. Using a new method for calculating the free energy of both the sphalerite (cubic) and wurtzite (hexagonal) phases of undoped and doped ZnS, we find that doped ZnS is more stable in the hexagonal structure. This, for the first time, fundamentally explains previous experimental observations of the coexistence of both phases in doped ZnS; hence, it profoundly impacts future work on sulfide TCMs. We also employ hybrid density functional theory calculations and a new carrier transport model, AMSET (ab initio model for mobility and Seebeck coefficient using the Boltzmann transport equation), to analyze the defect physics and electron mobility of the different cation-(B, Al, Ga, In) and anion-doped (F, Cl, Br, I) ZnS, in both the cubic and hexagonal phases, at various dopant compositions, temperatures, and carrier concentrations. Among all doped ZnS candidates, Al-doped ZnS (AZS) exhibits the highest dopant solubility, largest electronic band gap, and highest electrical conductivity of 3830, 1905, and 321 S · cm −1 , corresponding to the possible carrier concentrations of n = 10 21 , 10 20 , and 10 19 cm −3 , respectively, at the optimal 6.25% dopant concentration of Al and the temperature of 300 K.

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Section: Effective Masssupporting

confidence: 81%

Alloying ZnS in the hexagonal phase to create high-performing transparent conducting materials

Faghaninia

Bhatt

2016

Phys. Chem. Chem. Phys.

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“…Finally, substrate is taken out of the reaction bath, washed with de-ionized water and dried in hot air oven. Thickness of film can be increased by reinserting it into freshly prepared solution as mention above [38][39][40]. Schematic diagram of chemical bath deposition method is presented in fig.…”

Section: Film Deposition By Cbd Methodmentioning

confidence: 99%

A Comprehensive Review on Chemical Bath Deposited ZnS Thin Film

Khatri¹

2018

IJRASET

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Chemical methods for synthesizing metal chalcogenides are currently receiving wide attention because of their simplicity, cost effectiveness and suitability for large scale deposition. Thin films can be deposited on variety of substrate such as insulators, semiconductor or metal because of lower temperature associated with these methods reduces chances of oxidation and corrosion of substrate. Slow release of anions in these processes facilitates better crystallinity with improved grain structure. Depending upon bath parameter, film deposition can take place by ion-ion mechanism of materials on the substrate or adsorption of hydroxide intermediate on substrate. Using these methods, thin films of group II-VI, III-VI, V-VI etc. have been deposited. Photo-sensor, photocells, detectors, photoluminescence, photovoltaic materials, thermo-electric materials, pigments, anti-reflective coating, optical memories, crude petroleum processing etc. are some of the application of metal chalcogenide films. In the present review article, we have described brief theoretical background necessary for chemical deposition. We discussed CBD method in details to obtain well-adherent and uniform thin film of ZnS. Their bath parameter, structural, morphological, optical, electrical properties etc. are also described.

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“…9. The peaks near 664.74 cm −1 (0.2 M), 628.90 cm −1 (0.4 M), 871.18 cm −1 (0.6 M) and 603 cm −1 (0.8 M) are the characteristic vibrations of ZnS [51][52][53]. When compared to the other (0.2, 0.4, and 0.8 M) molar concentrations of thiourea, 0.6 M showed a much stronger ZnS characteristic vibrations (very Strong peak) from Raman spectra.…”

Section: Ft-raman Analysismentioning

confidence: 99%

Influence of thiourea on the synthesis and characterization of chemically deposited nano structured zinc sulphide thin films

Padmavathy

Lee

Ponnuswamy

2018

J Mater Sci: Mater Electron

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Nanocrystalline ZnS thin films incorporated onto glass substrates by chemical bath deposition method were investigated by X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), UV-Visible Spectroscopy (UV-Vis), Photoluminescence (PL), and Raman Spectroscopy (FT-R) studies. The influence of thiourea on the structural and optical properties of ZnS films was discussed in detail. The X-ray diffraction patterns confirmed the rhombohedral structure of ZnS thin films. AFM measurements indicated the nano carpet-like surface morphology variation in film with influence of thiourea. The optical absorption studies in the wavelength range of 200-800 nm showed that the band gap energy of ZnS has decreased from 3.69-3.36 eV, as thiourea varied from 0.2-0.8 M. The PL spectra divulged a shift near band edge emission around 360 nm, when thiourea concentration was increased. The Stokes shift calculations from PL emission spectra supported the relative intensities estimated from PL energy band spectra and showed a dependable repeatability for different molar concentrations. The Zn-S complexes were identified in the Raman spectra and the Raman spectral shift for 0.6 M composition of thiourea, which was found to be appreciable for ZnS thin films. The characterization studies clearly exposed the effect of thiourea onto the chemically deposited ZnS thin films.

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Properties of Al-doped ZnS Films Grown by Chemical Bath Deposition

Cited by 53 publications

References 12 publications

Alloying ZnS in the hexagonal phase to create high-performing transparent conducting materials

Alloying ZnS in the hexagonal phase to create high-performing transparent conducting materials

A Comprehensive Review on Chemical Bath Deposited ZnS Thin Film

Influence of thiourea on the synthesis and characterization of chemically deposited nano structured zinc sulphide thin films

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