Properties of 19.2% efficiency ZnO/CdS/CuInGaSe<sub>2</sub> thin‐film solar cells

Ramanathan, K.; Contreras, Miguel Á.; Perkins, Craig L.; Asher, S. E.; Hasoon, Falah S.; Keane, J.; Young, David L.; Romero, Manuel J.; Metzger, Wyatt K.; Noufi, R.; Ward, Jas S.; Duda, A.

doi:10.1002/pip.494

Cited by 945 publications

(443 citation statements)

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“…The formation of interfaces between them plays an important role in the optimal performance of the solar cell device. Although the efficiencies found for these chalcopyrite solar cells at laboratory level are close to the maximum theoretical value [4], much lower efficiencies are obtained using the large scale manufacturing fabrication methods. Furthermore, recent studies have shown that the selection of the buffer layer material plays a very important role in the optimal performance of a solar cell device [5].…”

Section: Introductionmentioning

confidence: 99%

Electronic band alignment at CuGaS2 chalcopyrite interfaces

Castellanos-Águila

Palacios

Conesa

et al. 2016

Computational Materials Science

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Cu-chalcopyrite semiconductors are commonly used as light absorbing materials on solar cell devices. The study of the heterointerfaces between the absorbent and the contact materials is crucial to understand their operation. In this study, band alignments of the heterojunctions between CuGaS 2 chalcopyrite and different semiconductors have been theoretically obtained using density functional theory and more advanced techniques. Band alignments have been determined using the average electrostatic potential as reference level. We have found that the strain in the heterointerfaces plays an important role in the electronic properties of the semiconductors employed here. In this work CuAlSe 2 /CuGaS 2 and CuGaS 2 /ZnSe heterointerfaces show band alignments where holes and electrons are selectively transferred through the respective heterojunctions to the external contacts. This condition is necessary for their application on photovoltaic devices.

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Section: Introductionmentioning

confidence: 99%

Electronic band alignment at CuGaS2 chalcopyrite interfaces

Castellanos-Águila

Palacios

Conesa

et al. 2016

Computational Materials Science

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“…The II-IV-V 2 and I-III-VI 2 compounds based on the zincblende lattice are well known to order in the chalcopyrite structure 1,2 and have received significant attention for their nonlinear optical properties and photovoltaic applications. For example, Cu(In,Ga)(S,Se) 2 thin films are widely used in photovoltaics [3][4][5] and ZnGeP 2 , CdGeAs 2 and AgGa(Se,Te) 2 single crystals are used as frequency doublers and parametric oscillators in nonlinear optical applications. [6][7][8] Order-disorder transitions of these chalcopyrite materials have been reported, with the disordered state apparently exhibiting the binary, parent zincblende structure in x-ray diffraction spectra.…”

Section: Introductionmentioning

confidence: 99%

Charge-neutral disorder and polytypes in heterovalent wurtzite-based ternary semiconductors: The importance of the octet rule

et al. 2015

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We investigate lattice ordering phenomena for the heterovalent ternaries that are based on the wurtzite lattice, under the constraint that the octet rule be preserved. We show that, with the single exception of a highly symmetric twinned structure, all allowed lattice orderings can be described by a pseudospin model corresponding to the two different stackings of ABAB rows of atoms in the basal plane that occur in the P na21 and P mc21 crystal structures. First-principles calculations show that the difference in the energies of formation between these two structures is 13±3 meV/fu (formula unit) for ZnSnN2 and is an order of magnitude larger for ZnGeN2, and that for both materials the P m31 structure, which contains only octet-rule-violating tetrahedra, has a significantly higher energy of formation and a signficantly lower band gap. We predict almost random stacking and wurtzite-like x-ray diffraction spectra in the case of ZnSnN2, consistent with reported measurements. The octet-rule-preserving model of disorder proposed here predicts a band gap that for ZnSnN2 is relatively insensitive to ordering, in contrast to the prevailing model, which invokes the random placement of atoms on the cation sublattice. The violations of the octet rule in the latter model lead to significant narrowing of the band gap. The Raman and photoluminescence spectra of ZnSnN2 are interpreted in light of the ordering model developed here. The observation that ZnGeN2 orders in the P na21 structure under appropriate growth conditions is consistent with the larger difference in the energies of formation of the P na21 and P mc21 structures for this material. The ordering model presented here has important implications for the optical, electronic and lattice properties of all wurtzite-based heterovalent ternaries.

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“…[1][2][3][4] CuInS 2 has a high absorption coefficient of 1 ϫ 10 5 cm −1 at 500 nm, 5 and a direct band gap of 1.5 eV, which matches well with the solar spectrum. 6 To date, efficiencies up to 19% are obtained with chalcopyrite-based solar cells.…”

Section: Introductionmentioning

confidence: 50%

Elucidation of homojunction formation in CuInS2 with impedance spectroscopy

Loef

Schoonman

Goossens

2007

Journal of Applied Physics

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Type transformation in CuInSe2 and CuInS2 solar cells is an important issue with far reaching consequences. In the present study, the presence of a p-n homojunction inside CuInS2 in a TiO2∕CuInS2 device is revealed with a detailed impedance spectroscopy and capacitance study. A n-type CuInS2 film with a thickness of 40nm is found at the TiO2 (n-type)/CuInS2 (p-type) interface. The effective donor density of this n-type film is 2×1017cm−3 at 400K and is higher than the effective acceptor density in the remaining p-type CuInS2, being 4×1016cm−3 at 400K. Both densities decrease upon increasing the temperature. This is explained by the activation of a CuIn″ acceptor state in n-type CuInS2 and a thermally activated hole trap in p-type CuInS2.

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Properties of 19.2% efficiency ZnO/CdS/CuInGaSe₂ thin‐film solar cells

Cited by 945 publications

References 3 publications

Electronic band alignment at CuGaS2 chalcopyrite interfaces

Electronic band alignment at CuGaS2 chalcopyrite interfaces

Charge-neutral disorder and polytypes in heterovalent wurtzite-based ternary semiconductors: The importance of the octet rule

Elucidation of homojunction formation in CuInS2 with impedance spectroscopy

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Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2 thin‐film solar cells

Cited by 945 publications

References 3 publications

Electronic band alignment at CuGaS2 chalcopyrite interfaces

Electronic band alignment at CuGaS2 chalcopyrite interfaces

Charge-neutral disorder and polytypes in heterovalent wurtzite-based ternary semiconductors: The importance of the octet rule

Elucidation of homojunction formation in CuInS2 with impedance spectroscopy

Contact Info

Product

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Properties of 19.2% efficiency ZnO/CdS/CuInGaSe₂ thin‐film solar cells