“…AIN due to its high surface acoustic wave velocity ͑ϳ5.76 km/ s͒, wide band gap ͑6.2 eV͒, low temperature coefficient of frequency ͑ϳ−19 ppm/°C͒, 4 low dielectric loss, and high electrical resistance is very suitable for fabricating SAW detectors for solar-blind UV sensing. Up to now, most AlN based acoustic devices, such as bulk wave resonators, 5 leaky, 6 Rayleigh, 7 and shear horizontal 8,9 wave sensors, were used for mass detection. We now report on the response to UV light of acoustic plate modes propagating in a sapphire substrate with AlN overlay with a characteristic periodic structure fabricated by epitaxial lateral overgrowth ͑ELOG͒ technique.…”