Promotion of activation ability of N vacancies to N2 molecules on sulfur-doped graphitic carbon nitride with outstanding photocatalytic nitrogen fixation ability

Recent advances in photocatalytic nitrogen fixation: from active sites to ammonia quantification methods

“… 87 In this work, the obtained catalyst (Nv&Od-CN) is hollow columnar and loose porous structure, which fully exposed the nitrogen vacancy as the active site with a yield of up to 118.8 mg L −1 h −1 g cat −1 . Before that, nitrogen vacancy and sulfur co-doped g-C 3 N 4 , 88 nitrogen vacancy and phosphorus co-doped g-C 3 N 4 were also reported. 25,89 Among them, the yield of N vacancy and S co-doped g-C 3 N 4 (Nv&Sd-CN) produced by Li and his coworkers 88 using dicyandiamide and H 2 S as raw materials by dielectric barrier discharge plasma treatment as high is as 6.2 mg L −1 h −1 g cat −1 , which is 2.3 and 25.8 times higher than that of N doped g-C 3 N 4 and g-C 3 N 4 , respectively.…”

Photocatalytic nitrogen reduction to ammonia: Insights into the role of defect engineering in photocatalysts

“…Nitride-based photosensitizing semiconductors (i.e., p-GaN, i-GaN, and n-GaN) with NVs have been prepared by plasma-assisted molecular beam epitaxy on commercially available Si(111) wafer [162]. Dielectric barrier discharge plasma treatment was demonstrated to construct NVs and sulfur co-doped g-C3N4 for active photocatalytic N2 reduction to NH3 [163].…”

Photocatalytic Fixation of Molecular Nitrogen in Systems Based on Graphite-Like Carbon Nitride: a Review

“…The nitrogen vacancy-rich and sulfur-doped material (S,V N -g-C 3 N 4 ) was obtained using g-C 3 N 4 plasma treatment in the presence of H 2 S [94]. The photocatalytic formation rate of ammonium ions in the presence of this material in aqueous-methanolic solutions (Table 2) was 2.3, 4.7 and 25.8 times higher than with V N -g-C 3 N 4 , S-g-C 3 N 4 and pure g-C 3 N 4 , respectively [94].…”

“…The nitrogen vacancy-rich and sulfur-doped material (S,V N -g-C 3 N 4 ) was obtained using g-C 3 N 4 plasma treatment in the presence of H 2 S [94]. The photocatalytic formation rate of ammonium ions in the presence of this material in aqueous-methanolic solutions (Table 2) was 2.3, 4.7 and 25.8 times higher than with V N -g-C 3 N 4 , S-g-C 3 N 4 and pure g-C 3 N 4 , respectively [94]. Porous ultrathin nanoleaves of g-C 3 N 4 doped with the same element with large lateral dimensions and carbon vacancies formed in the gas phase during polycondensation of thiourea showed a higher activity in the process of photo-fixation of atmospheric nitrogen in aqueous-methanolic solutions (Table 2) when compared to bulk g-C 3 N 4 doped with sulfur [95].…”