Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect

Spry, David J.; Neudeck, Philip G.; Chen, Liang‐Yu; Lukco, Dorothy; Chang, Carl W.; Beheim, Glenn M.

doi:10.1109/led.2016.2544700

Cited by 52 publications

(52 citation statements)

References 24 publications

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“…[24][25][26] Given these promising results, we decided to subject other chips diced from the same prototype IC wafer to electrical testing in simulated Venus surface atmospheric conditions inside the NASA Glenn Extreme Environments Rig (GEER). 27 Ring oscillator chips were selected for the first such test, as these ICs can be operated using the fewest number of wires (one signal output in addition to +V DD , GND, and -V SS chip DC power inputs), are a recognized standard for logic IC demonstration, and provide harmonic output signals that can be detected in frequency spectrum even in the presence of substantial expected electrical noise and output signal path attenuation.…”

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confidence: 99%

“…Two NASA Glenn fabricated SiC JFET ring oscillator ICs residing on separate chips were selected for testing in GEER: a 3-stage ring oscillator and an 11-stage ring oscillator that are further described in the supplementary material and elsewhere. [24][25][26]28 Two electrical feedthrough probe assemblies that are further described in the supplementary material were custom-built to enable operational testing of these chips exposed to simulated Venus surface atmosphere in GEER. Each probe assembly nominally provided four outside-chamber electrical connections to the SiC IC chip inside the chamber.…”

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confidence: 99%

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Prolonged silicon carbide integrated circuit operation in Venus surface atmospheric conditions

et al. 2016

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The prolonged operation of semiconductor integrated circuits (ICs) needed for long-duration exploration of the surface of Venus has proven insurmountably challenging to date due to the ∼ 460 °C, ∼ 9.4 MPa caustic environment. Past and planned Venus landers have been limited to a few hours of surface operation, even when IC electronics needed for basic lander operation are protected with heavily cumbersome pressure vessels and cooling measures. Here we demonstrate vastly longer (weeks) electrical operation of two silicon carbide (4H-SiC) junction field effect transistor (JFET) ring oscillator ICs tested with chips directly exposed (no cooling and no protective chip packaging) to a high-fidelity physical and chemical reproduction of Venus’ surface atmosphere. This represents more than 100-fold extension of demonstrated Venus environment electronics durability. With further technology maturation, such SiC IC electronics could drastically improve Venus lander designs and mission concepts, fundamentally enabling long-duration enhanced missions to the surface of Venus.

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Prolonged silicon carbide integrated circuit operation in Venus surface atmospheric conditions

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“…This was verified in [45] through demonstration of ICs based on 4H-SiC JFET integrating Hafnium ohmic contact with TaSi 2 interconnect with SiO 2 and SiN 4 dielectric layer hours of stable electrical operation at 500 0 C in the air. The research was extended further by testing the ICs at 727 0 C, after 25 hours of operation little change in electrical properties was noticed due to a quick increase in device resistance [46].…”

Section: Sic Jfet Application In Inverter and Boost Converter Circuitmentioning

confidence: 69%

Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET)

Ehiagwina

Kehinde

Afolabi

et al. 2016

IJATES

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Abstract-properties of Silicon Carbide Junction Field EffectTransistor (SiC JFET) such as high switching speed, low forward voltage drop and high temperature operation have attracted the interest of power electronic researchers and technologists, who for many years developed devices based on Silicon (Si). A number of power system Engineers have made efforts to develop more robust equipment including circuits or modules with higher power density. However, it was realized that several available power semiconductor devices were approaching theoretical limits offered by Si material with respect to capability to block high voltage, provide low on-state voltage drop and switch at high frequencies. This paper presents an overview of the current applications of SiC JFET in circuits such as inverters, rectifiers and amplifiers. Other areas of application reviewed include; usage of the SiC JFET in pulse signal circuits and boost converters. Efforts directed toward mitigating the observed increase in electromagnetic interference were also discussed. It also presented some areas for further research, such as having more applications of SiC JFET in harsh, high temperature environment. More work is needed with regards to SiC JFET drivers so as to ensure stable and reliable operation, and reduction in the prices of SiC JFETs through mass production by industries.

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“…13 From Fig. 6, the capacitor reaches 30 lC/cm 2 above 400 kV/cm, corresponding to read/write voltage of 7.4 V. Such a read/write voltage would be small for the SiC power supply, which is in the range of 10 V to 15 V. [15][16][17] SiC technology at 1 lm could have capacitors with minimum size of 12 lm 2 . Assuming a capacitor over field oxide (COFO) design and relaxed transistor design rules, the minimum amount of memory for a standalone chip (7 mm 9 7 mm) is of the order of 1 Kib to 8 Kib (average areal density 20 b/mm 2 to 160 b/mm 2 ).…”

Section: Room Temperaturementioning

confidence: 99%

“…Digital electronics have been demonstrated to operate up to at least 400°C for complementary metal-oxide-semiconductor (CMOS) field-effect transistors, 15 500°C for junction field-effect transistors (JFETs) 16 and 600°C for emitter coupled logic (ECL, a logic family that uses bipolar junction transistors). 17 Previous efforts to integrate ferroelectrics on SiC include PZT 18,19 and BaSrTiO 3 , 20 with PZT evaluated for HT NVM applications with memory functionality up to 200°C.…”

Section: Introductionmentioning

confidence: 99%

Integration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide

Ekström

Khartsev

Östling

et al. 2017

Journal of Elec Materi

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4H-SiC electronics can operate at high temperature (HT), e.g., 300°C to 500°C, for extended times. Systems using sensors and amplifiers that operate at HT would benefit from microcontrollers which can also operate at HT. Microcontrollers require nonvolatile memory (NVM) for computer programs. In this work, we demonstrate the possibility of integrating ferroelectric vanadiumdoped bismuth titanate (BiTV) thin films on 4H-SiC for HT memory applications, with BiTV ferroelectric capacitors providing memory functionality. Film deposition was achieved by laser ablation on Pt (111)/TiO 2 /4H-SiC substrates, with magnetron-sputtered Pt used as bottom electrode and thermally evaporated Au as upper contacts. Film characterization by x-ray diffraction analysis revealed predominately (117) orientation. P-E hysteresis loops measured at room temperature showed maximum 2P r of 48 lC/cm 2 , large enough for wide read margins. P-E loops were measurable up to 450°C, with losses limiting measurements above 450°C. The phase-transition temperature was determined to be about 660°C from the discontinuity in dielectric permittivity, close to what is achieved for ceramics. These BiTV ferroelectric capacitors demonstrate potential for use in HT NVM applications for SiC digital electronics.

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Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect

Cited by 52 publications

References 24 publications

Prolonged silicon carbide integrated circuit operation in Venus surface atmospheric conditions

Prolonged silicon carbide integrated circuit operation in Venus surface atmospheric conditions

Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET)

Integration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide

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