Progresses in III‐Nitride Distributed Bragg Reflectors and Microcavities Using AlInN/GaN Materials

Carlin, J.-F.; Zellweger, Christoph; Dorsaz, J.; Nicolay, Sylvain; Christmann, Gabriel; Feltin, E.; Butt, Raphael; Grandjean, N.

doi:10.1002/9783527610150.ch13

Cited by 7 publications

(8 citation statements)

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“…For x=0.18 (x=0) ∆n/n yields the value of -7.28 % (-12.50 %), which is slightly different in comparison with the value of -6.40 % (-12.70 %) obtained by using the expression (2) in Ref. [59].…”

Section: Dispersion Below the Band Gap And High-frequency Dielectric contrasting

confidence: 64%

Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN

Sakalauskas¹,

Behmenburg²,

Hums³

et al. 2010

J. Phys. D: Appl. Phys.

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A detailed discussion of the optical properties of Al-rich Al 1−x In x N alloy films is presented. The (0001)-oriented layers with In contents between x = 0.143 and x = 0.242 were grown by metal-organic vapor phase epitaxy on thick GaN buffers. Sapphire or Si(111) served as the substrate. High-resolution X-ray diffraction revealed pseudomorphic growth of the nearly lattice-matched alloys; the data analysis yielded the composition as well as the in-plain strain. The complex dielectric function (DF) between 1 and 10 eV was determined from spectroscopic ellipsometry measurements. The sharp onset of the imaginary part of the DF defines the direct absorption edge, while clearly visible features in the high-photon energy range of the DF, attributed to critical points of the band structure, indicate promising crystalline quality of the AlInN layers. It is demonstrated that the experimental data can be well reproduced by an analytical DF model. The extracted characteristic transition energies are used to determine the bowing parameters for all critical points of the band structure. In particular, strain and the high exciton binding energies for the Al-rich alloys are taken into account in order to assess the splitting between the valence band with Γ v 9 symmetry and the Γ c 7 conduction band at the center of the Brillouin zone. Finally, the compositional dependence of the high-frequency dielectric constants is reported.

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Section: Dispersion Below the Band Gap And High-frequency Dielectric contrasting

confidence: 64%

Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN

Sakalauskas¹,

Behmenburg²,

Hums³

et al. 2010

J. Phys. D: Appl. Phys.

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“…Unfortunately, it is difficult to compare with the values reported in reference[17], where the lattice parameters seem to present a slight decreasing trend, as the so called clustering appears probably to some ordering, indeed the indium atoms were positioned in every 4 hexagonal layer of their supercell. The calculated DOS of random InAlN showed that the band gap width of 4.4 eV is in good agreement with the experimental measurement of 4.3 eV[37]. In addition, the In segregation with 2 In or 4 In atoms reduces the band gap width from 4.4 eV (random) to 4.1 eV (with 2 In), and 3.8 eV (4In).…”

supporting

confidence: 82%

The effect of N-vacancy and In aggregation on the properties of InAlN

Mohamad

Chen

Ruterana

2020

Computational Materials Science

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In 0.17 Al 0.83 N, lattice matched to GaN, is an attractive solution for applications such as high electron mobility transistors, distributed Bragg reflectors, or light-emitting diodes. It has been reported that InAlN layers lattice matched to GaN on growth along the [0001] exhibit crystallographic degradation when the thickness is increased. In our recent work, it was shown, through theoretical modelling as well as transmission electron microscopy, that the N vacancy (V N) plays a critical role in this behavior. In this work, we have carried out a detailed theoretical investigation of the possible modification of the properties of this alloy as brought about by the presence of the nitrogen vacancy and the associated formation of the indium rich regions. After testing the ab initio procedures on the AlN and reproducing the lattice parameters and band gap with high accuracy, it is shown that the indium aggregation in InAlN leads to a reduction of the band gap. In contrast to AlN, where acceptor levels can also form, the combination of the nitrogen vacancy and the favored indium aggregation introduced even more levels at the top of the band gap, moreover examining the whole spin configuration we find a strong asymmetry in the occupation of the spin up and down states with a net moment of around 1 µB per supercell. Most importantly, the presence of a nitrogen vacancy changes significantly the top of the band gap: first, the band edges become very sharp, and second, the introduced states originating from local deformation are occupied. This leads to n type doping of the alloy and nicely agree with the use of Ti for generation of N vacancies in the technology of ohmic contacts on nitride materials. *Manuscript Click here to download Manuscript: CompMaterialSciencerevised2.docx Click here to view linked References

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“…In samples with small inhomogenous broadening, it persists up to high temperature, thanks to the polariton robustness to loss mechanisms, and it can be coherently controlled [81] (see also the contributions by Baumberg et al [13] and by Staehli et al [139] to the present volume). When GaN-based polariton samples will finally be available [22,147] (see also the contribution by Carlin et al [24] to the present volume), the amplification should persist at room temperature, thus opening the way to possible applications as fast optical switches or amplifiers.…”

Section: Parametric Amplification and Photoluminescencementioning

confidence: 91%

“…The present introduction aims at providing the reader with a general overview of the MC-polariton physics as it progressed during the last fifteen years. This is not, however, an exhaustive review, as certainly many important topics in polariton research are partially or not at all covered (for example the role of spin and light polarization, for which a starting point might be the contribution by Shelykh et al [136] to the present volume, or the recent progress in developing room-temperature polariton systems, for which the reader can refer to the contribution by Carlin et al [24]), while many others are repeated in the individual contributions to this volume (see e.g. the contributions by R. Houdré [59] and C. Weisbuch [150] to the present volume).…”

Section: Introductionmentioning

confidence: 99%

Fifteen Years of Microcavity Polaritons

Savona

2006

The Physics of Semiconductor Microcavities

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In semiconductors with a direct interband optical transition, the fundamental electronic excitations above the ground state are excitons, namely hydrogen-like bound electron-hole pairs. In a perfect bulk semiconductor material, however, a correct description of the excited states must include the linear coupling of excitons to the electromagnetic field. This coupling gives rise to normal modes that are linear superpositions of one exciton and one photon mode, called exciton-polaritons . Exciton-polaritons are the actual excited states of a bulk semiconductor.Bulk polaritons were suggested in 1958 by J. Hopfield [58] and measured a few years later by means of non-linear optical spectroscopy [2,52,57,152]. The normal-mode coupling for polaritons is aresult of momentum conservation in the exciton-photon interaction. This selection rule imposes a one-to-one coupling between exciton and photon modes having the same momentum. As a consequence, within the linear coupling regime, the situation is analogous to that of two linearlycoupled harmonic oscillators. Two normal modes at different energies, the upper and the lower polariton, are formed. Due to the very different exciton and photon energy dispersion, as a function of momentum, polariton modes display an anticrossing with a minimum energy separation that can be as large as 16 meV in bulk GaAs [2]. Within the anticrossing region, polaritons are full admixtures of exciton and photon modes, while they have pure exciton or photon character far from it.The concept of polaritons remained linked to the physics of bulk semiconductors for more than two decades. The progress in fabrication of epitaxial semiconductor heterostructures, particularly quantum wells (QWs) led naturally to a description of their electronic excitations in terms of the polariton concept. However, because of the mismatch in the dimensionality of excitons (2D) and photons (3D), momentum conservation applies only to the in-plane component, and one exciton mode couples to a continuum of photon modes, resulting in an irreversible radiative decay instead of a normal-mode coupling [6,44]. Only at larger in-plane momenta, photon modes that are evanescent in the direction orthogonal to the QW can form surface polari- Physics of Semiconductor Microcavities: From Fundamentals toNanoscale DevicesEdited by Benoit Deveaud

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Progresses in III‐Nitride Distributed Bragg Reflectors and Microcavities Using AlInN/GaN Materials

Cited by 7 publications

References 0 publications

Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN

Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN

The effect of N-vacancy and In aggregation on the properties of InAlN

Fifteen Years of Microcavity Polaritons

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