Progress towards silicon optoelectronics using porous silicon technology

Canham, Leigh; Cox, T. I.; Loni, A.; Simons, Andrew J.

doi:10.1016/0169-4332(96)00094-3

Cited by 121 publications

(43 citation statements)

References 54 publications

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“…Its photoluminescence (PL) property at room temperature [1] has been used in areas such as optical devices [2], sensors [3], optoelectronic light-emitting devices [4][5][6] and interlayer dielectric materials [7].…”

Section: Introductionmentioning

confidence: 99%

Ag-metallization effects on optical and electrical properties of porous silicon

Kayahan

Ceylan

Esmer

2008

Applied Surface Science

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Section: Introductionmentioning

confidence: 99%

Ag-metallization effects on optical and electrical properties of porous silicon

Kayahan

Ceylan

Esmer

2008

Applied Surface Science

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“…Electrochemically etched nanoporous porous silicon (PSi) is a photonic material that exhibits intrinsic above bandgap photoluminescence (PL) due to quantum confinement [6]. This property and the ability to easily fabricate high quality photonic band-gap microcavities have led researchers to investigate PSi as the basis of integrated all-silicon optoelectronic systems [7]. These applications require stabilization and enhancement of the intrinsic PL signal as the quantum efficiency of PSi nanocrystals (measured in photons emitted per incident photon) is weak (<1%) [8].…”

mentioning

confidence: 99%

Photoinduced fluorescence enhancement and energy transfer effects of quantum dots porous silicon

DeLouise

Ouyang

2009

Phys. Status Solidi (c)

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We investigate photoinduced fluorescence enhancement (PFE) and energy transfer effects of surfactant capped Cd/Se core and CdSe/ZnS core/shell quantum dots (QD) that emit at 630‐650 nm adsorbed in and onto porous silicon (PSi) single layer films and microcavity devices. Evidence is presented for fluorescence resonance energy transfer (FRET) from the QD (emitter) to mesoPSi nanostructures (acceptor) that photoluminess between 650‐850 nm. We also observe a strong PFE of QD emission adsorbed into meso porous silicon (mesoPSi) under continuous irradiation with 532 nm excitation light. New insight into the mechanism of PFE is gleaned from studies of PSi pore size and surface chemistry including native, H2O2, UV‐ozone, and thermal oxides, and aminosilane coated thermal oxide mesoPSi. These treatments alter the photoluminescent characteristics of the mesoPSi and QD. The PFE effect on QD PL is largest on thermally oxidized microcavities. PFE is considerably weaker for CdSe QD adsorbed onto macroPSi, silicon wafer surfaces and especially for ZnS capped QD suggesting the PFE effect requires a close interaction of the QD core with oxidized substrate. It is plausible that mesoPSi (10‐20 nm dia) mediates a more intimate contact compared to macro or planar Si wafer. The PFE effect dynamically increases the QD PL by passivating nonradiative state through oxidation and possibly through increasing the lifetime of nonradiative trapped state by coupling to surface vibrations. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Due to, e.g., correlations existing between the porosity and optical properties of PSi, the thus obtained materials, sometimes referred to as optical superlattices (Frohnhoff and Berger 1994), find diverse applications in optics (Canham et al 1996;Barthelemy et al 2007) (see Chapter "▶ Porous Silicon Multilayers and Superlattices"). An important question, in this respect, is whether the structural properties of the composite pore systems may be deduced from those of the individual blocks composing the systems.…”

Section: Microstructured Mesoporous Siliconmentioning

confidence: 99%