Progress on high-power UVC LEDs by increasing light-extraction efficiency

Hasegawa, Hideki; Kashima, Yukio; Matsuura, Eriko; Maeda, Noritoshi; Jo, Masafumi

doi:10.1117/12.2579593

Cited by 1 publication

(1 citation statement)

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“…Multiple research groups have carried out extensive examinations on DUV LED design and features of the constituent materials for several years yielding significant progress in performance [8,[21][22][23][24][25][26][27]. One of the most recent studies performed by Hirayama et al have introduced an AlGaN UV-C LED with high power in which a photonic crystal reflector was used [28]. Jain et al proposed graded staircase quantum barriers against electron leakage problem for AlGaN DUV LEDs [29].…”

Section: Introductionmentioning

confidence: 99%

285 nm AlGaN-BASED DEEP-ULTRAVIOLET LED WITH HIGH INTERNAL QUANTUM EFFICIENCY: COMPUTATIONAL DESIGN

Irem

Öner²,

Eroğlu

2023

Journal of Scientific Reports-A

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In this paper, the systematic computational design process of AlGaN-based multiple quantum-well (QW) deep-ultraviolet (DUV) light-emitting diode (LED) grown on sapphire (Al2O3) substrate was investigated. An optimization was held to increase internal quantum efficiency (IQE) handling the LED parameters such as doping percentage of the n- and the p-type layers of these devices. The structure parameters of the best design were determined through a customized genetic algorithm integrated into the nanostructure quantum electronic simulation (nextnano). As a determining factor, IQE was obtained to be 24% for the devised 285 nm LED. It has been demonstrated that this result can be increased up to a remarkably high value of 70% by a low threading dislocation density (TDD) and reduced Auger recombination. In addition, the operation input power and potential difference were successfully kept below 0.1 W/mm2 and 5.05 V, respectively.

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