Progress on EUV pellicle development

Zoldesi, Carmen; Bal, K.; Blum, B.; Bock, Guus; Brouns, Derk; Dhalluin, F.; Dziomkina, Nina V.; Espinoza, Juan Diego Arias; Hoogh, Joost de; Houweling, Z.S.; Jansen, Maarten J.; Kamali, Mohammad R; Kempa, Alain; Kox, Ronald; Kruif, Robert de; Lima, Jorge; Liu, Yang; Meijer, H.E.H.; Meiling, H.; Mil, Ijen van; Reijnen, Marco; Scaccabarozzi, Luigi; Smith, Daniel; Verbrugge, Beatrijs; Winters, Laurens de; Xiong, Xiaorong; Zimmerman, John

doi:10.1117/12.2049276

Cited by 40 publications

(36 citation statements)

References 3 publications

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“…Owing to the structural weakness of a pellicle, a pellicle is deflected caused by the gravity and deflection depth is about 100 μm at full scale (110 × 142 mm 2 ). [11,14] Moreover a pellicle has wrinkles due to difficulty of fabrication and thermal expansion. In this paper, we consider two cases of deformation; deflection and wrinkle.…”

Section: Optical Modeling For Deformed Pelliclementioning

confidence: 99%

“…A pellicle for mass production should overcome some requirements such as enough transmission, large size, strong mechanical stability, etc. [11] In order to reduce the absorption of EUV light at pellicle, a suggested EUV pellicle is made of inorganic material and it has extremely thin thickness. [11][12] For these reasons, flawless fabrication of the pellicle is impossible.…”

Section: Introductionmentioning

confidence: 99%

“…[11] In order to reduce the absorption of EUV light at pellicle, a suggested EUV pellicle is made of inorganic material and it has extremely thin thickness. [11][12] For these reasons, flawless fabrication of the pellicle is impossible. Furthermore, high absorption of the EUV light leads the thermal expansion of the pellicle.…”

Section: Introductionmentioning

confidence: 99%

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Impact of deformed extreme-ultraviolet pellicle in terms of CD uniformity

Kim

Yeung

Barouch

et al. 2015

Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII

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The usage of the extreme ultraviolet (EUV) pellicle is regarded as the solution for defect control since it can protect the mask from airborne debris. However some obstacles disrupt real-application of the pellicle such as structural weakness, thermal damage and so on. For these reasons, flawless fabrication of the pellicle is impossible. In this paper, we discuss the influence of deformed pellicle in terms of non-uniform intensity distribution and critical dimension (CD) uniformity. It was found that non-uniform intensity distribution is proportional to local tilt angle of pellicle and CD variation was linearly proportional to transmission difference. When we consider the 16 nm line and space pattern with dipole illumination (σc=0.8, σr=0.1, NA=0.33), the transmission difference (max-min) of 0.7 % causes 0.1 nm CD uniformity.Influence of gravity caused deflection to the aerial image is small enough to ignore. CD uniformity is less than 0.1 nm even for the current gap of 2 mm between mask and pellicle. However, heat caused EUV pellicle wrinkle might cause serious image distortion because a wrinkle of EUV pellicle causes a transmission loss variation as well as CD nonuniformity. In conclusion, local angle of a wrinkle, not a period or an amplitude of a wrinkle is a main factor to CD uniformity, and local angle of less than ~270 mrad is needed to achieve 0.1 nm CD uniformity with 16 nm L/S pattern.

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Section: Optical Modeling For Deformed Pelliclementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Impact of deformed extreme-ultraviolet pellicle in terms of CD uniformity

Kim

Yeung

Barouch

et al. 2015

Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII

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“…EUV was conceived as a pellicle-less technology, but over the past two years the industry has realized that this may not be practical and a pellicle solution is now seen as a requirement for EUV HVM manufacturing. Very good progress has been made in demonstrating potential solutions for the pellicle membrane [19], but a complete HVM pellicle solution requires much more: it needs a technical solution for the pellicle along with a business solution that provides for a commercial EUV pellicle supply and ensures EUV pellicle compatibility with the existing mask tool infrastructure, specifically for metrology tools. However, from today's perspective it is clear that EUVL will have to be introduced as a pellicle-less technology if it is to be used for patterning a few critical layers at the 10 nm node.…”

Section: Euv Maskmentioning

confidence: 99%

EUV lithography: progress, challenges, and outlook

Wurm¹

2014

SPIE Proceedings

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Extreme Ultraviolet Lithography (EUVL) has been in the making for more than a quarter century. The first EUVL production tools have been delivered over the past year and chip manufacturers and suppliers are maturing the technology in pilot line mode to prepare for high volume manufacturing (HVM). While excellent progress has been made in many technical and business areas to prepare EUVL for HVM introduction, there are still critical technical and business challenges to be addressed before the industry will be able to use EUVL in HVM.

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“…The EUV pellicle consists of very thin film due to the strong absorption of EUV light. However, the very thin EUV pellicle can be deflected, so that a multi-stack structure as an EUV pellicle was suggested by ASML [2]. The multi-stack structure can reduce a film deformation caused by the oxidation and is better than single layer with respect to film deflection caused by the gravitational force.…”

Section: Introductionmentioning

confidence: 99%

Multi-stack extreme-ultraviolet pellicle with out-of-band reduction

Lee

Kim

et al. 2015

SPIE Proceedings

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The out-of-band (OoB) radiation that can cause serious aerial image deformation on the wafer is reported. In order to check the maximum allowable OoB radiation reflectivity at the extreme ultra-violet (EUV) pellicle, we simulated the effect of OoB radiation and found that the maximum allowable OoB radiation reflectivity at the pellicle should be smaller than 15 % which satisfy our criteria such as aerial image critical dimension (CD), contrast, and normalized image log slope (NILS). We suggested a new multi-stack EUV pellicle that can have high EUV transmission, minimal OoB radiation reflectivity, and enough deep ultra-violet transmission for inspection and alignment of the mask through the EUV pellicle.

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Progress on EUV pellicle development

Cited by 40 publications

References 3 publications

Impact of deformed extreme-ultraviolet pellicle in terms of CD uniformity

Impact of deformed extreme-ultraviolet pellicle in terms of CD uniformity

EUV lithography: progress, challenges, and outlook

Multi-stack extreme-ultraviolet pellicle with out-of-band reduction

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