Progress of MCT Detector Technology at AIM Towards Smaller Pitch and Lower Dark Current

Eich, D.; Schirmacher, W.; Hanna, S.; Mahlein, K.-M.; Figgemeier, H.

doi:10.1007/s11664-017-5596-4

Cited by 25 publications

(7 citation statements)

References 18 publications

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“…Bolometers have improved from the iron rods initially used by Langley to materials with strong insulator-semiconductor transitions such as vanadium dioxide [40]. Photodiodes have improved from the helpful impurities in the occasional silicon ingot described by Ohl to epitaxial gallium arsenide (GaAs) [41], InSb [42], MCT [43], and superlattices [44]. Gone are the days of Shive's germanium phototransistors for IR detection; today, heterogeneous integration with silicon-based complementary metal oxide (CMOS) transistors are common [3].…”

Section: Materials Developmentmentioning

confidence: 99%

Solution-processable infrared photodetectors: Materials, device physics, and applications

Paramasivam

Vella

et al. 2021

Materials Science and Engineering: R: Reports

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This review is written to introduce infrared photon detectors based on solution-processable semiconductors. A new generation of solution-processable photon detectors have been reported in the past few decades based on colloidal quantum dots, two-dimensional materials, organics semiconductors, and perovskites. These materials offer sensitivity within the infrared spectral regions and the advantages of ease of fabrication at low temperature, tunable materials properties, mechanical flexibility, scalability to large areas, and compatibility with monolithic integration, rendering them as promising alternatives for infrared sensing when compared to vacuum-processed counterparts that require rigorous lattice matching during integration. This work focuses on infrared detection using disordered semiconductors so as to articulate how the inherent device physics and behaviors are different from conventional crystalline semiconductors. The performance of each material family is summarized in tables, and device designs unique to solution-processed materials, including narrowband photodetectors and pixel-less up-conversion imagers, are highlighted in application prototypes distinct from conventional infrared cameras. We share our perspectives in examining open challenges for the development of solution-processable infrared detectors and comment on recent research directions in our community to leverage the advantages of solutionprocessable materials and advance their implementation in next-generation infrared sensing and imaging applications.among many other areas. Commercially available IR detectors are predominantly based on vacuum-processed inorganic compound semiconductors, which are structurally rigid, brittle, and require fabrication via complex epitaxial growth and costly processes. A new generation of solution-processable semiconductors have been reported in the past few decades including colloidal quantum dots (CQDs) [1,8,9], organic semiconductors (OSCs) [4,7,10,11], perovskites [1,12,13], and two-dimensional (2D) materials [5,14]. These materials offer sensitivity within the IR spectral regions and the advantages of ease of fabrication

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Section: Materials Developmentmentioning

confidence: 99%

Solution-processable infrared photodetectors: Materials, device physics, and applications

Paramasivam

Vella

et al. 2021

Materials Science and Engineering: R: Reports

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Section: Recent Advances In Ir Detection Technologiesmentioning

confidence: 99%

“…Aim Infrarot‐Module GmbH (AIM) has recently manufactured FPAs based p‐on‐n planar MCT detectors with a cut‐off wavelength of 5.2 μm achieved at 80 K. [ 254 ] These detectors were fabricated into 640 × 512 and 1024 × 768 pixel formats with a 20‐ and 10‐μm pitch, respectively. The NETD performance obtained for the 640 × 512 FPA detector showed slightly higher values of 24 mK at 160 K with a significant increase to about 40 mK at 180 K. This increase was attributed to the impact of thermal generation dark current which affects the NETD detector's performance and leads to a reduction in integration time.…”

Section: Recent Advances In Ir Detection Technologiesmentioning

confidence: 99%

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Alshahrani

Kesaria

Anyebe

et al. 2021

Advanced Photonics Research

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Mid‐wavelength infrared (MWIR) photodetectors (PDs) are highly essential for environmental sensing of hazardous gases, security, defense, and medical applications. Mercury cadmium telluride (MCT) materials have been the most used detector in the MWIR range. However, it is plagued by several challenges including toxicity concerns, a high rate of Auger nonradiative recombination, a large band‐to‐band (BTB) tunneling current, nonuniformity, and the need for cryogenic cooling. Theoretically, it is predicted that type‐II superlattice (T2SL) materials can emerge as an alternative with the potential to outperform the current state‐of‐the‐art MCT PDs due to suppression of Auger recombination associated with bandgap engineering and reduced BTB tunneling current caused by the larger effective mass. Based on this theoretical prediction, it is believed that T2SL have the potential to operate at high temperatures and overcome the size, weight, and power consumption limitations of MCT. Herein, a detailed review of the fundamental material properties of T2SL PDs is provided while providing a comparison of the optical and electrical performances of Ga‐free (InAs/InAsSb) and Ga‐based (InAs/GaSb) T2SL PDs. Finally, recent advances in IR detection technologies including focal plane arrays and quantum cascade infrared photodetectors are explored.

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“…Indium-doped (In) layers of the HES MCT MBE n-type with a charge carrier concentration of more than 10 15 cm −3 are used as a absorber for photovoltaic IR-detectors with the P + −n-transition architecture, providing the limiting parameters of IR-detectors at cryogenic and elevated temperatures [7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

New recombination centers in MBE MCT layers on (013) GaAs substrates

S.A.

M.F.

N.N.

et al. 2023

Physics of the Solid State

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A large inhomogeneity of the minority lifetime from 1 to 10 μs at 77 K over the area is observed in some experiments when high-quality HgCdTe layers of the electronic type of conductivity are grown on GaAs substrates with a diameter of 76.2 mm with the (013) orientation by the method of molecular beam epitaxy. As a rule, the such lifetimes are determined by carrier recombination at Shockley-Hall-Read (SHR) centers. Modern studies and ideas about the nature of the SHR centers do not allow us to explain the observed results. The measurements of HgCdTe layers by the second harmonic generation showed the existence of a quasi-periodic change in the signal at the minima of the azimuthal dependence, which is associated with the appearance of misoriented microregions of the crystal structure. The amplitude of the quasi-periodic change in the signal decreases with increasing lifetime and completely disappears for regions with higher lifetime values. Similar dependences are observed during etching of HgCdTe layers, which indicates the existence of misoriented microregions in the bulk. Thus, misoriented microregions of the crystal structure have a significant effect on the lifetime and are new centers of Shockley-Hall-Read recombination. Keywords: HgCdTe layers, lifetime, second harmonic, azimuthal angular dependences, recombination centers, misoriented microregions.

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Progress of MCT Detector Technology at AIM Towards Smaller Pitch and Lower Dark Current

Cited by 25 publications

References 18 publications

Solution-processable infrared photodetectors: Materials, device physics, and applications

Solution-processable infrared photodetectors: Materials, device physics, and applications

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

New recombination centers in MBE MCT layers on (013) GaAs substrates

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