The
nucleation and propagation of foreign polytypes during seeded
sublimation growth of silicon carbide is addressed on a macroscopic
footing, using a coupled experimental and numerical simulation approach.
Experiments are conducted in a contactless growth geometry for different
seed substrates with varying polarity, miscut angle, polytype, and
crystal shape (concave and convex). The interface shape evolution
is tracked by periodic nitrogen marking, which also allows the measurement
of lateral and normal growth rates at any time during growth. Classical
2D nucleation theory is included in modeling the full process, and
this is compared to experiments. We demonstrate that the occurrence
of a foreign polytype is linked to the combined effects of (i) the
presence of the natural {0001} facets and (ii) the minimization of
2D nucleation energy. Areas with a high probability of foreign polytype
nucleation can thus be predicted. Once formed, the progress or disappearance
of foreign inclusions is directly related to their interaction with
the macroscopic growth interface of the crystal.