Progress in photodetector devices utilizing transition metal dichalcogenides

Li, Xin; Aftab, Sikandar; Hussain, Sajjad; Kabir, Fahmid; Al-Sehemi, Abdullah G.; Aslam, Muhammad; Kim, Jae Hong; Goud, Burragoni Sravanthi

doi:10.1039/d3tc04253g

Cited by 4 publications

(2 citation statements)

References 254 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Transition metal dichalcogenides (TMDs) have attracted much research interest in the dynamic field of two-dimensional materials. − Depending on their number of layers, TMDs have configurable electronic characteristics, following a wide range of applications for next-generation devices. Monolayer TMDs, for instance, emerge as an effective material for quantum computers, optoelectronics, and nanoelectronics due to their direct bandgap. − However, in contrast to their monolayer counterparts, few-layer TMDs maintain flexibility due to the presence of interlayer or van der Waals (vdW) interaction among different layers, while providing slightly increased structural robustness.…”

Section: Introductionmentioning

confidence: 99%

Interlayer Vibronic Interactions and Phonon Anharmonic Decay in Few-Layer WS₂ Nanoflakes

Ghanghass,

Rani,

Sameera

et al. 2024

J. Phys. Chem. C

View full text Add to dashboard Cite

Temperature-dependent (TD) Raman spectroscopy has been utilized to probe the phonon anharmonicity in few-layer WS2, focusing on interlayer interactions and Davydov splitting under resonance excitation. In this study, spectroscopic measurements were conducted across a wide temperature range of 200–600 K using a laser with an excitation wavelength of 633 nm. The splitting in the out-of-plane A 1g mode due to weak interlayer interactions in few-layer WS2 was observed to be prominent at low temperatures. The first-order temperature coefficients corresponding to the peak positions of E 2 normalg 1 and A 1g modes indicate the softening of Raman modes with an increase in temperature. The quantification of quasi-harmonic and anharmonic contributions to phonon mode softening has been primarily identified by using thermodynamic relations. Furthermore, a semi-quantitative model has been employed to investigate the TD frequency shift and peak width of E 2 normalg 1 and A 1g modes, demonstrating the importance of three- and four- phonon anharmonicities.

show abstract

Section: Introductionmentioning

confidence: 99%

Interlayer Vibronic Interactions and Phonon Anharmonic Decay in Few-Layer WS₂ Nanoflakes

Ghanghass,

Rani,

Sameera

et al. 2024

J. Phys. Chem. C

View full text Add to dashboard Cite

show abstract

“…Two-dimensional (2D) layered materials, such as black phosphorus (BP) and transition metal dichalcogenides, have received widespread attention due to their remarkable electronic and optoelectronic properties and present great potential in the development of antiambipolar transistors, photodetectors, gas sensing, motion detection, and versatile photologic devices . Tin sulfide (SnSe), a representative post-transition metal monochalcogenide, possesses the merits of low cost, low toxicity, and environment stability .…”

Section: Introductionmentioning

confidence: 99%

2D Reconfigurable van der Waals Heterojunction for Logic Gate Circuits and Wide-Spectrum Photodetectors via Sulfur Substitution and Band Matching

Chen,

Huang,

Zheng

et al. 2024

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

The attractive physical properties of two-dimensional (2D) semiconductors in group IVA-VIA have been fully revealed in recent years. Combining them with 2D ambipolar materials to construct van der Waals heterojunctions (vdWHs) can offer tremendous opportunities for designing multifunctional electronic and optoelectronic devices, such as logic switching circuits, half-wave rectifiers, and broad-spectrum photodetectors.Here, an optimized SnSe 0.75 S 0.25 is grown to design a SnSe 0.75 S 0.25 / MoTe 2 vdWH for logic operation and wide-spectrum photodetection. Benefiting from the excellent gate modulation under the appropriate sulfur substitution and type-II band alignment, the device exhibits reconfigurable antiambipolar and ambipolar transfer behaviors at positive and negative source−drain voltage (V ds ), enabling stable XNOR logic operation. It also features a gate-modulated positive and negative rectifying behavior with rectification ratios of 265:1 and 1:196, confirming its potential as half-wave logic rectifiers. Besides, the device can respond from visible to infrared wavelength up to 1400 nm. Under 635 nm illumination, the maximum responsivity of 1.16 A/W and response time of 657/ 500 μs are achieved at the V ds of −2 V. Furthermore, due to the strong in-plane anisotropic structure of SnSe 0.75 S 0.25 -alloyed nanosheet and narrow bandgap of 2H-MoTe 2 , it shows a broadband polarization-sensitive function with impressive photocurrent anisotropic ratios of 15.6 (635 nm), 7.0 (808 nm), and 3.7 (1310 nm). The direction along the maximum photocurrent can be reconfigurable depending on the wavelengths. These results indicate that our designed alloyed SnSe 0.75 S 0.25 /MoTe 2 vdWH has reconfigurable logic operation and broadband photodetection capabilities in 2D multifunctional integrated circuits.

show abstract

Advancements in 2D transition metal dichalcogenides (TMDs) inks for printed optoelectronics: A comprehensive review

Shahbaz,

Tahir,

et al. 2024

Materials Today

View full text Add to dashboard Cite

Progress in photodetector devices utilizing transition metal dichalcogenides

Abstract: Transition metal dichalcogenides (TMDs) with two dimensions (two D) exhibit remarkable electronic and optoelectronic properties that have made them a highly promising platform for the development of photodetectors (PDs). Highly...

Cited by 4 publications

References 254 publications

Interlayer Vibronic Interactions and Phonon Anharmonic Decay in Few-Layer WS₂ Nanoflakes

Interlayer Vibronic Interactions and Phonon Anharmonic Decay in Few-Layer WS₂ Nanoflakes

2D Reconfigurable van der Waals Heterojunction for Logic Gate Circuits and Wide-Spectrum Photodetectors via Sulfur Substitution and Band Matching

Advancements in 2D transition metal dichalcogenides (TMDs) inks for printed optoelectronics: A comprehensive review

Contact Info

Product

Resources

About

Progress in photodetector devices utilizing transition metal dichalcogenides

Abstract: Transition metal dichalcogenides (TMDs) with two dimensions (two D) exhibit remarkable electronic and optoelectronic properties that have made them a highly promising platform for the development of photodetectors (PDs). Highly...

Cited by 4 publications

References 254 publications

Interlayer Vibronic Interactions and Phonon Anharmonic Decay in Few-Layer WS2 Nanoflakes

Interlayer Vibronic Interactions and Phonon Anharmonic Decay in Few-Layer WS2 Nanoflakes

2D Reconfigurable van der Waals Heterojunction for Logic Gate Circuits and Wide-Spectrum Photodetectors via Sulfur Substitution and Band Matching

Advancements in 2D transition metal dichalcogenides (TMDs) inks for printed optoelectronics: A comprehensive review

Contact Info

Product

Resources

About

Interlayer Vibronic Interactions and Phonon Anharmonic Decay in Few-Layer WS₂ Nanoflakes

Interlayer Vibronic Interactions and Phonon Anharmonic Decay in Few-Layer WS₂ Nanoflakes