Progress in lead-based ferroelectric and antiferroelectric single crystals: composition modification, crystal growth and properties

Luo, Nengneng; Li, Yuanyuan; Xia, Zhiguo; Li, Qiang

doi:10.1039/c2ce06430h

Cited by 60 publications

(42 citation statements)

References 101 publications

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“…The PMN-xPT single crystals applied in this work were grown by a modified Bridgman method [19]. Crystal samples were cut from the bottom of an as-grown boule, and the corresponding PT content x = 0.35.…”

Section: Methodsmentioning

confidence: 99%

Temperature-Dependent Phase Transition in Orthorhombic [011]c Pb(Mg1/3Nb2/3) O3-0.35PbTiO3 Single Crystal

Liu

Yan

et al. 2014

Crystals

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Relaxor [011] c PMN-0.35PT single crystal phase transition characteristics are investigated through various methods including variable temperature dielectric properties, X-ray diffraction, bipolar ferroelectric hysteresis loops (P-E) and electric-field-induced strain (S-E) hysteresis loops measurements. The results reveal that two phase transitions exist within the range from room temperature to 250 °C : orthorhombic (O)-tetragonal (T)-cubic (C). The O-to-T and T-to-C phase transition temperatures have been identified as 84 °C and 152 °C , respectively. Diffuseness degree of the T-to-C phase transition for the unpoled single crystal has been calculated to be 1.56, implying an intermediate state between normal and relaxor ferroelectrics. Temperature-dependent remanent polarization (P r ), coercive field (E c ), saturation polarization (P s ), hysteresis loop squareness (R sq ), and longitudinal piezoelectric constant (d * 33 ) are also explored to learn the details of the phase transitions. Variable temperature unipolar S uni -E hysteresis loops avail additional evidence for the microstructure change in the as-measured single crystal.

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Section: Methodsmentioning

confidence: 99%

Temperature-Dependent Phase Transition in Orthorhombic [011]c Pb(Mg1/3Nb2/3) O3-0.35PbTiO3 Single Crystal

Liu

Yan

et al. 2014

Crystals

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“…With further decrease in temperature, the spontaneous polarization and strain increase gradually. 4. Comparison of tetragonal PIN-PMN-PT single domain crystals poled by a general method (room temperature poling) and a high temperature poling method Fig.…”

Section: Poling Methodsmentioning

confidence: 99%

“…[1][2][3][4][5][6] Over the last decade, extensive studies have been focused on the piezoelectric response of domain engineered crystals, especially for [001] poled rhombohedral relaxor-PT crystals, with longitudinal piezoelectric coefficient d 33 and electromechanical coupling factor k 33 being on the order of >1500 pC N −1 and >0.9, respectively. Ferroelectric phase instability is thought to be responsible for the high piezoelectric activity in relaxor-PT crystals, 7,8 which can be induced by the phase transition points (for example, morphotropic phase boundary and polymorphic phase transition) and relaxor component.…”

Section: Introductionmentioning

confidence: 99%

Achieving single domain relaxor-PT crystals by high temperature poling

Wang

Jin

et al. 2014

CrystEngComm

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Single domain relaxor-PT crystals are important from both fundamental and application viewpoints. Compared to domain engineered relaxor-PT crystals, however, single domain crystals are prone to cracking during poling. In this paper, based on the analysis of the cracking phenomenon in [001] poled tetragonal 0.25Pb(In0.5Nb0.5)O3-0.37Pb(Mg 1/3Nb2/3)O3-0.38PbTiO3 (PIN-PMN-PT) crystals, the non-180°ferroelastic domain switching was thought to be the dominant factor for cracking during the poling process. A high temperature poling technique, by which the domain switching can be greatly avoided, was proposed to achieve the single domain relaxor-PT crystals. By this poling approach, a quasi-single domain crystal was obtained without cracks. In addition, compared to room temperature poling, the high temperature poled PIN-PMN-PT crystals showed improved electromechanical properties, i.e., a low dielectric loss, a low strain-electric field hysteresis and a high mechanical quality factor, demonstrating a beneficial poling approach. This journal is the Partner Organisations 2014. (PIN-PMN-PT) crystals, the non-180°f erroelastic domain switching was thought to be the dominant factor for cracking during the poling process. A high temperature poling technique, by which the domain switching can be greatly avoided, was proposed to achieve the single domain relaxor-PT crystals. By this poling approach, a quasi-single domain crystal was obtained without cracks. In addition, compared to room temperature poling, the high temperature poled PIN-PMN-PT crystals showed improved electromechanical properties, i.e., a low dielectric loss, a low strain-electric field hysteresis and a high mechanical quality factor, demonstrating a beneficial poling approach.

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“…5 Moreover, incorporation of Sn 4+ in the B-site can make Pb(ZrSnTi)O 3 much easier in compositional tailoring and enhance the stability of ferroelectric region. 6 Therefore, it is necessary to investigate the effect of the A-or B-site synchronous modification for PZT ceramics structure and physical properties, which may be able to further broaden the application in designing optical communication system and other optoelectronic devices in the future.…”

Section: Introductionmentioning

confidence: 99%

Thermotropic phase transitions in Pb1−xSrx(Al1/3Nb2/3)0.1(Zr0.52Ti0.48)0.9O3 ceramics: Temperature dependent dielectric permittivity and Raman scattering

Peng

Wang

et al. 2015

AIP Advances

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The phase transitions of Pb1−xSrx(Al1/3Nb2/3)0.1(Zr0.52Ti0.48)0.9O3 (Sr-modified PAN-PZT) ceramics with Sr compositions of x = 2%, 5%, 10% and 15% have been investigated using X-ray diffraction (XRD), temperature dependent dielectric permittivity and Raman scattering. The XRD analysis show that the phase transition occurs between Sr composition of 5% and 10%. Based on the broad dielectric peaks at 100 Hz, the diffused phase transition from tetragonal (T) to cubic (C) structure shifts to lower temperature with increasing Sr composition. The dramatic changes of wavenumber and full width at half-maximum (FWHM) for E(TO4)′ softing mode can be observed at morphotropic phase boundary (MPB). Moreover, the MPB characteristic shows a wider and lower trend of temperature region with increasing Sr composition. It could be ascribed to the diminishment of the energy barrier and increment of A-cation entropy. Therefore, the Sr-modified PAN-PZT ceramics unambiguously undergo two successive structural transitions (rhombohedral-tetragonal-cubic phase) with temperature from 80 to 750 K. Correspondingly, the phase diagram of Sr-modified PAN-PZT ceramics can be well depicted.

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Progress in lead-based ferroelectric and antiferroelectric single crystals: composition modification, crystal growth and properties

Cited by 60 publications

References 101 publications

Temperature-Dependent Phase Transition in Orthorhombic [011]c Pb(Mg1/3Nb2/3) O3-0.35PbTiO3 Single Crystal

Temperature-Dependent Phase Transition in Orthorhombic [011]c Pb(Mg1/3Nb2/3) O3-0.35PbTiO3 Single Crystal

Achieving single domain relaxor-PT crystals by high temperature poling

Thermotropic phase transitions in Pb1−xSrx(Al1/3Nb2/3)0.1(Zr0.52Ti0.48)0.9O3 ceramics: Temperature dependent dielectric permittivity and Raman scattering

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