Progress in directed self-assembly hole shrink applications

Younkin, Todd R.; Gronheid, Roel; Delgadillo, Paulina Rincon; Chan, Boon Teik; Vandenbroeck, Nadia; Demuynck, S.; Romo-Negreira, Ainhoa; Parnell, Doni; Nafus, Kathleen; Shigeru, Tahara; Somervell, Mark

doi:10.1117/12.2012353

Cited by 13 publications

(12 citation statements)

References 2 publications

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“…Early successful demonstrations of hole shrinking using DSA thus prompted several integration efforts toward the migration of DSA from a lab‐scale nanofabrication method into a potentially viable lithography extension . The integration of DSA into a full platform for contact hole applications is still raising some concerns however.…”

Section: Introductionmentioning

confidence: 99%

Self‐consistent field theory investigation of directed self‐assembly in cylindrical confinement

Laachi

Delaney

Kim

et al. 2014

J Polym Sci B Polym Phys

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We use self‐consistent field theory to study the self‐assembly of cylinder‐forming diblock copolymers confined in a cylindrical prepattern. This situation arises in contact holes—the hole shrink problem—where the goal is to produce a cylindrical hole with reduced dimensions relative to a guiding prepattern. In this study, we focus on systems with a critical prepattern dimension ranging from 50 nm to 100 nm that consequently lead to the formation of a single cylinder in the middle of the hole. We find that a variety of defect morphologies arise from the self‐assembly process and are strongly governed by the prepattern dimensions, wetting conditions as well as the polymer molecular weight. We also consider blends of diblock copolymers and homopolymers and determine optimal blending configurations that not only favor the formation of the desired cylindrical morphology but also extend the processing window relative to the pure diblock case. When defective structures form inside the prepattern, we compute their formation energy and use the string method to examine the kinetic pathways for the transition from the defective state to the perfect cylindrical state. © 2014 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2015, 53, 142–153

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Section: Introductionmentioning

confidence: 99%

Self‐consistent field theory investigation of directed self‐assembly in cylindrical confinement

Laachi

Delaney

Kim

et al. 2014

J Polym Sci B Polym Phys

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“…12 Furthermore, DSA is capable of shrinking contact holes (CHs) and improving the critical dimension uniformity (CDU). DSA is able to multiply the pitch dictated by optical lithography by a factor of 4 and higher.…”

Section: Introductionmentioning

confidence: 99%

Fundamental study of placement errors in directed self-assembly

Wuister

Ambesi

Druzhinina

et al. 2014

J. Micro/Nanolith. MEMS MOEMS

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Contact holes (CHs) created by 193i lithography were shrunken by directed self-assembly of polystyrene-b-methylmethacrylate (PS-PMMA) block copolymers (BCPs). The placement error of these highly confined systems is determined both experimentally and by simulations. Good agreement between simulations (2 nm) and experiments was observed (2 nm). Extensive simulations show that the placement error is dependent on the length of the PS block only, indicating that the placement error is intrinsic to the BCP. This was explained by considering the BCPs as springs. For double CHs, a relation is found between the offset of the CH from the center of the CHs and the additional placement error.

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“…An assessment has been made of the electrical performance of these structures and the DSA treated results were compared to the reference process where no DSA was used ( Figure 14C). The results demonstrate that the higher resistance that was observed from the DSA process can be fully explained by the smaller via CD from this process [34]. When it comes to electrical performance, no intrinsic issues are seen that are induced by the DSA process.…”

Section: Grapho-epitaxy Of Hole Patternsmentioning

confidence: 71%

Readying Directed Self-Assembly for Patterning in Semi-Conductor Manufacturing

Gronheid¹,

Delgadillo

Singh

et al. 2013

J. Photopol. Sci. Technol.

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4 Intel assignee to imec * roel.gronheid@imec.beIn recent years Directed Self-Assembly (DSA) has come up as a strong candidate technology for advanced lithography. DSA is a complementary technology that is used to enhance established projection lithography. In this paper, an overview is given of activities at imec that are driving towards readying DSA technology for implementation into semiconductor manufacturing. Flows for line/space and contact hole pattern formation based on chemo-as well as grapho-epitaxy are available and used for understanding process sensitivities, evaluation of defect densities and the demonstration of integration approaches. The state-of-the-art of the various process flows is discussed along with the primary outstanding issues.

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Progress in directed self-assembly hole shrink applications

Cited by 13 publications

References 2 publications

Self‐consistent field theory investigation of directed self‐assembly in cylindrical confinement

Self‐consistent field theory investigation of directed self‐assembly in cylindrical confinement

Fundamental study of placement errors in directed self-assembly

Readying Directed Self-Assembly for Patterning in Semi-Conductor Manufacturing

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