Programmable logic elements using multigate ambipolar transistors

Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe2 Thin Film Transistors

“…This has been widely demonstrated in organic ambipolar transistors − and 2D material transistors. − Among the large atomically thin material families, graphene, carbon nanotube (CNT), black phosphorus (BP), and certain TMDs like WSe 2 exhibit intrinsic ambipolar behavior without the need for doping. The primary challenge of ambipolar transistors is their higher off-state current compared to unipolar devices, particularly for small-bandgap materials such as graphene and BP. , Consequently, a dual-gate structure is advantageous in ambipolar devices, as it not only suppresses the off-state current but also enables reconfigurable ambipolar TFTs that can be reversibly switched between p-type and n-type modes. − Furthermore, due to the independent input of the two gates, logic circuits made with ambipolar dual-gate TFTs can potentially achieve the desired operation with fewer transistors and lower power consumption than complementary metal–oxide semiconductor (CMOS) technology. − …”