Programmable Bipolar and Unipolar Nonvolatile Memory Devices Based on Poly(2‐(<i>N</i>‐carbazolyl)ethyl methacrylate) End‐Capped with Fullerene

Hahm, Suk Gyu; Kang, Nam Goo; Kwon, Wonsang; Kim, Kyung‐Tae; Ko, Yong Gi; Ahn, Seonyoung; Kang, Beom Goo; Chang, Taihyun; Lee, Jae‐Suk; Ree, Moonhor

doi:10.1002/adma.201103647

Cited by 80 publications

(47 citation statements)

References 26 publications

(16 reference statements)

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“…Electrons tunnel into the dielectric and are trapped at C 60 sites as a result of the applied electric fi eld during programming. [ 3,12 ] The memory state of the TFT is read out at a non-destructive bias pulse of V GS of 0 V ( V DS = −1 V) with a time interval of 60 s. During the erase process a negative V GS of −3 V is applied leading to an electric fi eld which forces the trapped electrons to move back to the channel. is signifi cantly smaller.…”

Section: Doi: 101002/admi201400238mentioning

confidence: 99%

Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin‐Film Memory Transistors

Khassanov

Schmaltz

Steinrück

et al. 2014

Adv Materials Inter

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of the impact of distance of the C 60 -memory unit to the semiconductor channel. By applying mixed SAMs of C 60 -functionalized molecules and insulating alkyl molecules the charge dispersion can be tuned. [ 5 ] Due to the specifi c design of the SAMs and the perfect control of the dielectric-semiconductor interface it is possible to improve the retention time of memory devices by 3 orders of magnitude compared to previous work. [ 5 ] We demonstrate, that C 60 memory units, which are immersed in an insulating SAM matrix and by that are electrically isolated from the TFT channel exhibit a large memory ratio and improved memory retention. A SAM matrix, where C 60 units are not only immersed but also covered by alkyl chains, leads to the best stability of the memory states and retention times up to 10 5 s. Additionally we show that retention is more affected by the SAM composition and thereby the placement of the C 60 -unit in the dielectric monolayer matrix than by insulating side chain pattern of the organic semiconductor in the TFT channel, which also contribute to the donor-acceptor distance. In order to reduce the charge dispersion between C 60 -units, the amount of C 60 -functionalized molecules in the densely packed dielectric SAM was diluted to 5 mol-

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Section: Doi: 101002/admi201400238mentioning

confidence: 99%

Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin‐Film Memory Transistors

Khassanov

Schmaltz

Steinrück

et al. 2014

Adv Materials Inter

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“…1-3 Such memories can be switched between high and low resistance states (that is, OFF and ON states) by applying an external electric field. [4][5][6][7][8][9][10][11][12] Electrical memory characteristics can generally be divided into two categories, namely nonvolatile (for example, WORM (writeonce-read-many-times) and flash) and volatile memory (for example, dynamic random access memory and SRAM (static random access memory)), which show different tendencies for the stored charges to dispel. The volatility of these digital information storage devices can be controlled by (1) the charge transfer or charge trapping ability of the active materials and (2) the morphological packing structures in the memory layers.…”

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confidence: 99%

High-performance stretchable resistive memories using donor–acceptor block copolymers with fluorene rods and pendent isoindigo coils

Wang

Saito

et al. 2016

NPG Asia Mater

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Diblock copolymers consisting of electron-donating poly[2,7-(9,9-dihexylfluorene)] (PF) rods and electron-withdrawing poly (pendent isoindigo) (Piso) coils were designed and synthesized through a click reaction. The electronic properties and interchain organization of the copolymers could be tuned by varying the PF/Piso ratio (PF 14 -b-Piso n (n = 10, 20, 60 and 100)). The highest occupied molecular orbital and lowest unoccupied molecular orbital energy levels of the studied polymers were progressively reduced as the length of Piso increased, affecting the charge trapping and intramolecular charge transfer environment between PF and Piso domains. Thermally treated PF 14 -b-Piso n thin films exhibited a clear nanofibrillar structure, and the d-spacing was enhanced systematically as the Piso chain length increased. Resistive memory characteristics were explored with a sandwich indium tin oxide/PF 14 -b-Piso n s/Al device configuration. The enhanced conjugated PF conducting channels led to stable resistance switching behavior, exhibiting volatile SRAM (static random access memory) (PF 14 -b-Piso 10 ) and nonvolatile WORM (write-once-read-many-times) (PF 14 -b-Piso 20 , PF 14 -b-Piso 60 , PF 14 -b-Piso 100 ) characteristics with a large ON/OFF ratio (10 6 ) and a stable retention time (10 4 s). A more appealing feature is that such memory cells were integrated on a soft poly(dimethylsiloxane) substrate, allowing for the development of a stretchable data storage device. Reliable and reproducible electrical characteristics, including SRAM-and WORM-type memories, could be explored as the device was stretched under an applied tensile strain ranging from 0 to 50%. The studied donor-acceptor copolymers indeed showed great potential for stretchable electronic applications with controllable digital information storage characteristics. NPG Asia Materials (2016) 8, e298; doi:10.1038/am.2016.112; published online 26 August 2016 INTRODUCTION Polymer-based electrical bistable memory devices have been extensively studied owing to their advantages of structural flexibility, low-cost, printability and three-dimensional stacking. 1-3 Such memories can be switched between high and low resistance states (that is, OFF and ON states) by applying an external electric field. [4][5][6][7][8][9][10][11][12] Electrical memory characteristics can generally be divided into two categories, namely nonvolatile (for example, WORM (writeonce-read-many-times) and flash) and volatile memory (for example, dynamic random access memory and SRAM (static random access memory)), which show different tendencies for the stored charges to dispel. The volatility of these digital information storage devices can be controlled by (1) the charge transfer or charge trapping ability of the active materials and (2) the morphological packing structures in the memory layers. Conjugated block copolymers can effectively manipulate charge storage volatility because of their unique self-organization properties, on the basis of the chemical structures of

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“…[1][2][3][4][5][6][7][8][9][10][11][12] Resistor-and transistor-based memory devices are popular architectural approaches for operating the memories. Data storage with resistor memories employs the changes in resistance in response to an applied voltage bias.…”

Section: Introductionmentioning

confidence: 99%

Multilevel nonvolatile transistor memories using a star-shaped poly((4-diphenylamino)benzyl methacrylate) gate electret

et al. 2013

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Multilevel nonvolatile transistor memories were fabricated using star-shaped poly((4-diphenylamino)benzyl methacrylate) (star-PTPMA) electret dielectric for charge storage and N,N 0 -bis(2-phenylethyl)perylene-3,4,9,10-bis(dicarboximide) (BPE-PTCDI) as an n-type semiconductor. Charges were controllably stored by applying a negative voltage bias, detected by shifting the threshold voltage, and this device retained the digital states even when the supplied voltage was removed. The multilevel data storage characteristics obtained by applying different gate voltages suggested that the device possessed nonvolatile write-many-read-many (WMRM) memory behaviors. The electronic charges were transferred and permanently accumulated in the gate electret from the restricting region of the star-PTPMA with well-defined charge trapping elements, but not in the case of linear-PTPMA. P-type pentacene was also used as a semiconductor layer to clarify the operating mechanism under a gate electric field. Our results demonstrated the significance of the architecture effect of the polymer electrets for nonvolatile organic transistor memory devices and their potentials in high-density data storage.

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Programmable Bipolar and Unipolar Nonvolatile Memory Devices Based on Poly(2‐(N‐carbazolyl)ethyl methacrylate) End‐Capped with Fullerene

Cited by 80 publications

References 26 publications

Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin‐Film Memory Transistors

Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin‐Film Memory Transistors

High-performance stretchable resistive memories using donor–acceptor block copolymers with fluorene rods and pendent isoindigo coils

Multilevel nonvolatile transistor memories using a star-shaped poly((4-diphenylamino)benzyl methacrylate) gate electret

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