2012
DOI: 10.1002/adma.201103647
|View full text |Cite
|
Sign up to set email alerts
|

Programmable Bipolar and Unipolar Nonvolatile Memory Devices Based on Poly(2‐(N‐carbazolyl)ethyl methacrylate) End‐Capped with Fullerene

Abstract: A novel polymer, poly(2-(N -carbazolyl)ethyl methacrylate) end-capped with fullerene (PCzMA-C(60) ), has been synthesized via living anionic polymerization. Electrically programmable flash memory devices were easily fabricated with this polymer by using solution coating and metal deposition. This polymer was found in these devices to exhibit bipolar and unipolar switching behaviors with a high ON/OFF current ratio, a long retention time, high reliability, and low power consumption. The excellent properties and… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

1
46
0

Year Published

2012
2012
2016
2016

Publication Types

Select...
8
1

Relationship

1
8

Authors

Journals

citations
Cited by 80 publications
(47 citation statements)
references
References 26 publications
1
46
0
Order By: Relevance
“…Electrons tunnel into the dielectric and are trapped at C 60 sites as a result of the applied electric fi eld during programming. [ 3,12 ] The memory state of the TFT is read out at a non-destructive bias pulse of V GS of 0 V ( V DS = −1 V) with a time interval of 60 s. During the erase process a negative V GS of −3 V is applied leading to an electric fi eld which forces the trapped electrons to move back to the channel. is signifi cantly smaller.…”
Section: Doi: 101002/admi201400238mentioning
confidence: 99%
“…Electrons tunnel into the dielectric and are trapped at C 60 sites as a result of the applied electric fi eld during programming. [ 3,12 ] The memory state of the TFT is read out at a non-destructive bias pulse of V GS of 0 V ( V DS = −1 V) with a time interval of 60 s. During the erase process a negative V GS of −3 V is applied leading to an electric fi eld which forces the trapped electrons to move back to the channel. is signifi cantly smaller.…”
Section: Doi: 101002/admi201400238mentioning
confidence: 99%
“…1-3 Such memories can be switched between high and low resistance states (that is, OFF and ON states) by applying an external electric field. [4][5][6][7][8][9][10][11][12] Electrical memory characteristics can generally be divided into two categories, namely nonvolatile (for example, WORM (writeonce-read-many-times) and flash) and volatile memory (for example, dynamic random access memory and SRAM (static random access memory)), which show different tendencies for the stored charges to dispel. The volatility of these digital information storage devices can be controlled by (1) the charge transfer or charge trapping ability of the active materials and (2) the morphological packing structures in the memory layers.…”
mentioning
confidence: 99%
“…[1][2][3][4][5][6][7][8][9][10][11][12] Resistor-and transistor-based memory devices are popular architectural approaches for operating the memories. Data storage with resistor memories employs the changes in resistance in response to an applied voltage bias.…”
Section: Introductionmentioning
confidence: 99%