Profiling with Depth Resolution of Sub-nm for SiO₂/ SiC Interface by Dual-Beam TOF-SIMS Combined with Simulation

Abstract

For precise investigation of distribution for impurity or composition at SiO2/SiC interface, dual-beam Time-of-flight Secondary ion mass spectrometry (TOF-SIMS) with low energy sputtering beam was available. In addition to the experimental profiles, simulation using MRI model, in which Mixing, Roughness and Information depth were employed as parameters, enabled to acquire a more authentic distribution at the SiO2/SiC interface. Slight discrepancy on depth profiles between samples with different surface roughness was duplicated on the convoluted profiles in the simulation. Moreover, reconstructed profile of nitrogen indicated a real distribution with less impact of mixing and roughness, although that may contain uncertainty due to incompletion in the simulation model or variation of the distribution owing to detection species in the experiment. From the result of carbon profiles of both experimental and convoluted profiles, the relative discrepancy on the carbon distribution between samples was clarified, which suggested the possibility that a carbon thin layer at the SiO2/SiC interface would be found in the future.