Production-Worthy USJ Formation by Self-Regulatory Plasma Doping Method

Sasaki, Y.; Ito, Hideki; Okashita, K.; Tamura, Hideo; Jin, C.G.; Mizuno, B.; Okumura, Tomohiro; Aiba, I.; Fukagawa, Y.; Sauddin, H.; Tsutsui, Kazuhiro; Iwaï, Hideo

doi:10.1063/1.2401571

Cited by 13 publications

(8 citation statements)

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“…Etching and deposition are simultaneously performed here to fill high aspect ratio gaps by using the so-called bias-CVD process. Figure 38 shows a sheet resistance distribution evaluated after being activated in a plasma doping application [26]. The contour lines are drawn at 5 Ω/sq intervals in the figure.…”

Section: Applications Of Icp To Various Thin-film Processing Technolomentioning

confidence: 99%

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Inductively Coupled Plasma Sources and Applications

Okumura

2010

Physics Research International

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Section: Applications Of Icp To Various Thin-film Processing Technolomentioning

confidence: 99%

“…This size demands not only dimensional accuracy on the scale of several atoms but also controllability of the etching side wall and selectivity to underlayers. Figure 38: Sheet resistance distribution evaluated in a plasma doping application [26].…”

Section: Future Prospects Of Icpmentioning

confidence: 99%

Inductively Coupled Plasma Sources and Applications

Okumura

2010

Physics Research International

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“…We demonstrated a novel selfregulatory PD (SR-PD) method, and successfully achieved the uniformity and the dosage control with accuracy of less than 1.5 % [4]. PD was also successfully integrated into FinFETs devices and NAND Flash Memories [5,6].…”

Section: Introductionmentioning

confidence: 99%

Comparison of chemical binding states between ultra shallow plasma doping (PD) and ion implantation (I/I) samples by using hard X‐ray photoelectron spectroscopy (HX‐PES)

Jin¹,

Kobata

Sasaki³

et al. 2008

Phys. Status Solidi (c)

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We measured HX‐PES (Si 1s) of ultra low energy ion implantion (I/I) samples combined with Ge pre‐amorphizaiton ion implantation (Ge‐PAI) before and after spike RTA, and compared it with that of plasma doping (PD) samples. As‐doped I/I sample showed higher hole density compared to as‐doped PD sample due to lower defect induced carrier trap. Ge‐PAI+I/I sample showed strong asymmetric in lower binding energy region due to Si‐Ge bonding. After spike RTA, PD sample showed superior impurity activation than that of Ge‐PAI+I/I sample. Both Ge‐PAI+I/I and PD sample showed excellent recrystallization after spike RTA. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…2,3) This process does not require a high temperature, by which O-related defects are formed in Czochralski (CZ)-grown Si wafers; 4) thus, the decrease in minority carrier lifetime is not observed. Recently, low-temperature and shallow doping techniques, such as plasma doping, [5][6][7][8][9][10][11] atomic layer deposition (ALD) of dopants, [12][13][14] and the formation of -doping layers by molecular beam epitaxy (MBE), [15][16][17][18][19][20][21] have also been used to fabricate thin doping layers of fieldeffect transistors (FETs). The impurity doping by radicals in a catalytic chemical vapor deposition (Cat-CVD) system is another alternative technique.…”

Section: Introductionmentioning

confidence: 99%

Low Temperature Phosphorus Doping in Silicon Using Catalytically Generated Radicals

Hayakawa

Nakashima

Miyamoto

et al. 2011

Jpn. J. Appl. Phys.

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Recently, experimental electron impact widths and ion broadening parameters of isolated Kr I lines were reported. In addition, the contribution of Kr II and Kr III ion dynamics to Kr I line widths is determined. Here, on the basis of the critical evaluation of the plasma source, the deconvolution procedure and earlier results by the same authors, possible causes for erroneous line shape recordings and their interpretation, are discussed. To demonstrate the experimental difficulties in the procedure used for Stark broadening parameter measurements, an additional experiment is performed and profiles of plasmabroadened lines are generated. All our new results and the analysis of the plasma source, experimental procedure and reported data of Kr I lines indicate that certain aspects of earlier work need further investigation. IntroductionRecently, a new technique was proposed for simultaneous determination of the electron impact Stark width, w e , ion broadening parameter, A, and ion dynamic contribution D, to the line width and used to study more than 70 lines of He I [1-3], Ne I [4], Ar I [4, 5] and Kr I [4, 6] with a respectable estimated accuracy of 15%. The authors [1-6] used their six free parameters deconvolution (SFPD) procedure [7-9] to determine plasma and line parameters including w e , A and D. A comparison between experimental [5] and theoretical A results [10] for Ne I and Ar I lines shows systematically larger (up to a factor 15 for Ne I) experimental A values. The aim of this work is to evaluate this newly proposed technique [1-7] for simultaneous determination of w e , A and D of the plasma broadened atomic line. For this purpose the proposed deconvolution technique, plasma source and experimental procedure [1-7] will be

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Production-Worthy USJ Formation by Self-Regulatory Plasma Doping Method

Cited by 13 publications

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Inductively Coupled Plasma Sources and Applications

Inductively Coupled Plasma Sources and Applications

Comparison of chemical binding states between ultra shallow plasma doping (PD) and ion implantation (I/I) samples by using hard X‐ray photoelectron spectroscopy (HX‐PES)

Low Temperature Phosphorus Doping in Silicon Using Catalytically Generated Radicals

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