Production of stable silicon and germanium isotopes via their enriched volatile compounds

Сенников, П. Г.; Корнев, Р. А.; Абросимов, Н. В.

doi:10.1007/s10967-015-4192-4

Cited by 11 publications

(6 citation statements)

References 39 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Holes in Ge/SiGe quantum well heterostructures have been shown to have excellent transport properties such as low percolation densities of around 2.1 × 10 10 cm –2 and peak mobilities of around 1 × 10 6 cm 2 V –1 s –1 at a temperature of 1.7 K, indicating low levels of disorder. Specifically, holes in Ge are attractive because the large spin–orbit interaction allows electric control of the spin, , while the p-like orbital symmetry of holes is expected to be robust against hyperfine interactions, which can be further suppressed through isotopic purification of Ge. , For qubit applications, further potential advantages of holes in Ge, compared to electrons in Si, include a small effective mass which relaxes fabrication constraints, lack of valley degeneracy in the valence band, and large out-of-plane and tunable effective g -factors. , Altogether, these properties make Ge/SiGe quantum well heterostructures a leading candidate for quantum processors with demonstrations of singlet–triplet qubits and single-hole qubits up to a four-qubit quantum processor …”

Section: Introductionmentioning

confidence: 99%

Characterization of Shallow, Undoped Ge/SiGe Quantum Wells Commercially Grown on 8-in. (100) Si Wafers

Hutchins-Delgado

Miller

Scott³

et al. 2022

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

Hole spins in Ge quantum wells have shown success in both spintronic and quantum applications, thereby increasing the demand for high-quality material. We performed material analysis and device characterization of commercially grown shallow and undoped Ge/SiGe quantum well heterostructures on 8-in. (100) Si wafers. Material analysis reveals the high crystalline quality, sharp interfaces, and uniformity of the material. We demonstrate a high mobility (1.7 × 105 cm2 V–1 s–1) 2D hole gas in a device with a conduction threshold density of 9.2 × 1010 cm–2. We study the use of surface preparation as a tool to control barrier thickness, density, mobility, and interface trap density. We report interface trap densities of 6 × 1012 eV–1. Our results validate the material’s high quality and show that further investigation into improving device performance is needed. We conclude that surface preparations which include weak Ge etchants, such as dilute H2O2, can be used for postgrowth control of quantum well depth in Ge-rich SiGe while still providing a relatively smooth oxide–semiconductor interface. Our results show that interface state density is mostly independent of our surface preparations, thereby implying that a Si cap layer is not necessary for device performance. Transport in our devices is instead limited by the quantum well depth. Commercially sourced Ge/SiGe, such as studied here, will provide accessibility for future investigations.

show abstract

Section: Introductionmentioning

confidence: 99%

Characterization of Shallow, Undoped Ge/SiGe Quantum Wells Commercially Grown on 8-in. (100) Si Wafers

Hutchins-Delgado

Miller

Scott³

et al. 2022

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

show abstract

“…Synthesis of Si Nanoparticles : First, MW‐assisted decomposition of SiF 4 was used, which ensured proper size and crystalline structure of Si NPs . High‐quality Si NP powder was ensured by MW surface discharge in a mixture of SiF 4 and molecular hydrogen (H 2 ).…”

Section: Methodsmentioning

confidence: 99%

“…The gas pressure in the chamber was maintained constant and equal to 700 Torr and the H 2 /SiF 4 ratio was 6. The choice of SiF 4 as precursor of Si NPs is also promising because of possibilities to form isotopically enriched Si NPs . In order to prepare aqueous suspensions of Si NPs the obtained powder was mixed with de‐ionized water or in the standard phosphate buffered saline (PBS) solution (for experiments with cells) by using treatment in an ultrasonic bath (100 W, 37 kHz) for 30 min.…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Bi‐Modal Nonlinear Optical Contrast from Si Nanoparticles for Cancer Theranostics

Kharin

Lysenko

Rogov

et al. 2019

Advanced Optical Materials

Self Cite

View full text Add to dashboard Cite

Having negligible toxicity compared to quantum dots based on compound semiconductors [1,2] and being capable of providing efficient imaging and therapeutic functionalities based on its unique physicochemical characteristics, [3][4][5] nanosilicon occupies a particularly important niche related to biological applications. The imaging functionality of nanosilicon typically employs photoluminescence (PL) of quantum-confined excitonic states in silicon (Si) nanocrystals (NCs) with sizes smaller than the exciton Bohr's radius (≈5 nm for the bulk crystalline Si (c-Si)), which enables tracking the presence of Si nanoparticles (NPs) in cells or tissues. [6][7][8][9][10][11][12][13] On the other hand, Si NPs can serve as efficient sensitizers of local heating under external stimuli to initiate hyperthermia-based therapies. As an example, Presenting a safe alternative to conventional compound quantum dots and other functional nanostructures, nanosilicon can offer a series of breakthrough hyperthermia-based therapies under near-infrared, radiofrequency, ultrasound, etc., excitation, but the size range to sensitize these therapies is typically too large (>10 nm) to enable efficient imaging functionality based on photoluminescence properties of quantum-confined excitonic states. Here, it is shown that large Si nanoparticles (NPs) are capable of providing two-photon excited luminescence (TPEL) and second harmonic generation (SHG) responses, much exceeding that of smaller Si NPs, which promises their use as probes for bi-modal nonlinear optical bioimaging. It is finally demonstrated that the combination of TPEL and SHG channels makes possible efficient tracing of both separated Si NPs and their aggregations in different cell compartments, while the resolution of such an approach is enough to obtain 3D images. The obtained bi-modal contrast provides lacking imaging functionality for large Si NPs and promises the development of novel cancer theranostic modalities on their basis.

show abstract

“…This value of yield was achieved by recycling tail parts of ingots and scraps to chemical purification. In a method is developed for production of isotopically enriched germanium by direct hydrogen reduction of GeF 4 in plasma. Germanium was produced in the form of «flakes» which then were melted and the crystal was grown by Czochralski method.…”

Section: Introductionmentioning

confidence: 99%

Production of germanium stable isotopes single crystals

Чурбанов

Гавва

Буланов

et al. 2017

Crystal Research and Technology

Self Cite

View full text Add to dashboard Cite

It is reported on production of germanium stable isotopes 72 Ge, 73 Ge, 74 Ge, 76 Ge single crystals with high isotopic and chemical purity by hydride method. Separation of isotopes was carried out by centrifugal method using monogermane as the initial volatile substance. Samples of monoisotopic monogermanes 72 GeH 4 , 73 GeH 4 , 74 GeH 4 , 76 GeH 4 were purified by the method of low-temperature rectification. Elementary polycrystalline germanium was extracted by pyrolysis from respective monogermane and purified from impurities by the method of zone melting. Single crystals of germanium isotopes were grown by Czochralski method. The content of the main isotope in the produced single crystals 72 Ge, 73 Ge, 74 Ge, 76 Ge was 99.98; 99.90; 99.93 and 87.5 at. %, respectively, and the content of the impurities of stable elements was less than 10 −5 -10 −6 mass %.

show abstract

Production of stable silicon and germanium isotopes via their enriched volatile compounds

Cited by 11 publications

References 39 publications

Characterization of Shallow, Undoped Ge/SiGe Quantum Wells Commercially Grown on 8-in. (100) Si Wafers

Characterization of Shallow, Undoped Ge/SiGe Quantum Wells Commercially Grown on 8-in. (100) Si Wafers

Bi‐Modal Nonlinear Optical Contrast from Si Nanoparticles for Cancer Theranostics

Production of germanium stable isotopes single crystals

Contact Info

Product

Resources

About