Production of Si- and Ge-Based Thermoelectric Materials by Spark Plasma Sintering

Erofeeva, I. V.; Дорохин, М. В.; Zdoroveyshchev, A. V.; Kuznetsov, Yu. M.; Popov, Alexander; Lantsev, E. A.; Boryakov, A. V.; Котомина, В. Е.

doi:10.1134/s1063782618120072

Cited by 7 publications

(8 citation statements)

References 8 publications

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“…The sintered ingots of Si0.65Ge0.35Sbδ were cut into plates on which phase composition studies using X-ray diffraction (XRD) analysis, as well as measurements of thermoelectric coefficients were performed. The Seebeck coefficient was calculated from simultaneous temperature and thermoelectric voltage measurements using chromel-alumel thermocouples [11]. The resistivity was measured by the standard fourprobe method.…”

Section: Methodsmentioning

confidence: 99%

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Nanostructured SiGe:Sb solid solutions with improved thermoelectric figure of merit

Дорохин¹,

Demina²,

Erofeeva³

et al. 2020

Preprint

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Thermoelectric Si 0,65 Ge 0,35 Sb δ materials have been fabricated by spark plasma sintering of Ge-Si-Sb powder mixture. The electronic properties of Si 0,65 Ge 0,35 Sb δ were found to be dependent on the uniformity of mixing of the components, which in turn is determined by the maximum heating temperature during solid-state sintering. Provided the concentration of donor Sb impurity is optimized the thermoelectric figure of merit for the investigated structures can be as high as 0.628 at the temperature of 490 °С, the latter value is comparable with world-known analogues obtained for Si 1- x Ge x P δ .

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Section: Methodsmentioning

confidence: 99%

“…The measurements were carried out in the temperature range of Тm = 50-490 °С. The technology for structures fabrication, as well as all measurement techniques, are described in detail in [7,11]. Lines associated with Sb were not resolved due to low concentration.…”

Section: Methodsmentioning

confidence: 99%

Nanostructured SiGe:Sb solid solutions with improved thermoelectric figure of merit

Дорохин¹,

Demina²,

Erofeeva³

et al. 2020

Preprint

View full text Add to dashboard Cite

show abstract

“…The sintered ingots of Si 0.65 Ge 0.35 Sb δ were cut into plates on which phase composition studies using X-ray diffraction (XRD) analysis, as well as measurements of thermoelectric coefficients were performed. The Seebeck coefficient was calculated from simultaneous temperature and thermoelectric voltage measurements using chromelalumel thermocouples [12]. The resistivity was measured by the standard four-probe method.…”

Section: Methodsmentioning

confidence: 99%

“…The thermal conductivity was measured by the stationary heat flux method [13]. The measurements were carried out at temperatures ranging from T m = 50 -490 • C. The technology for structures fabrication, as well as all measurement techniques, are described in detail in [7,12]. Figure 1 shows X-ray diffraction spectra of the initial powder (1) and samples (1,3,5) fabricated at various temperatures.…”

Section: Methodsmentioning

confidence: 99%

Nanostructured SiGe:Sb solid solutions with improved thermoelectric figure of merit

Дорохин¹,

Demina²,

Kuznetsov³

et al. 2020

Nanosystems: Phys. Chem. Math.

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“…Over the last two decades, much attention has been paid to the development and study of nanostructured and fine-grained thermoelectric materials [1][2][3][4][5][6][7][8]. Siliconand germanium-based compounds -Si 1−x Ge x [1,[4][5][6][7] have a special place among them.…”

Section: Introductionmentioning

confidence: 99%

Formation of a fine-grained Si-=SUB=-1-x-=/SUB=-Ge-=SUB=-x-=/SUB=- thermoelectric by spark plasma sintering

et al. 2022

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The kinetics of diffusion processes occurring during the formation of polycrystalline Si1-xGex nanostructures (x=0.20, 0.35) by spark plasma sintering in the temperature range 20-1200oC was studied for the first time. A mechanism for the formation of a SiGe solid solution is proposed as a result of a comprehensive study of the microstructure and phase composition of samples with particle sizes from 150 nm to 100 μm, together with the analysis of experimental sintering maps. It is based on the phenomenon of mutual diffusion of Si and Ge atoms that occurs during the entire sintering process. For the selected sintering modes, the grain size of the formed SiGe corresponds to the size of the initial powder particles. Keywords: spark plasma sintering, solid solution SiGe, thermoelectric characteristics, figure of merit ZT.

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Production of Si- and Ge-Based Thermoelectric Materials by Spark Plasma Sintering

Cited by 7 publications

References 8 publications

Nanostructured SiGe:Sb solid solutions with improved thermoelectric figure of merit

Nanostructured SiGe:Sb solid solutions with improved thermoelectric figure of merit

Nanostructured SiGe:Sb solid solutions with improved thermoelectric figure of merit

Formation of a fine-grained Si-=SUB=-1-x-=/SUB=-Ge-=SUB=-x-=/SUB=- thermoelectric by spark plasma sintering

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