Production of nitrogen acceptors in ZnO by thermal annealing

Garces, N. Y.; Giles, N. C.; Halliburton, L. E.; Cantwell, G.; Eason, D. B.; Reynolds, D. C.; Look, David C.

doi:10.1063/1.1450041

Cited by 200 publications

(123 citation statements)

References 20 publications

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“…12,42 This trend indicates that with low nitrogen doping the electron has an effective role which corresponds to n-type conductivity. However, the inverse conductivity type is observed with higher order of N-doping which is in relation to previous reports, 19,43 The Fermi level stretched towards valence band maxima in this situation as nitrogen supposed to be the acceptor impurity in ZnO, [44][45][46] therefore, it enhances more hole in valence band instead of electrons in conduction band which leads shift of Fermi level near to the valence band maxima to compensate the Law of Mass Action. 47 The relationship of BursteinMoss shift with optical band gap and the conductivity type of material is found quite interesting …”

Section: Aip Advances 8 035212 (2018)mentioning

confidence: 39%

Acceptor-modulated optical enhancements and band-gap narrowing in ZnO thin films

et al. 2018

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Fermi-Dirac distribution for doped semiconductors and Burstein-Moss effect have been correlated first time to figure out the conductivity type of ZnO. Hall Effect in the Van der Pauw configuration has been applied to reconcile our theoretical estimations which evince our assumption. Band-gap narrowing has been found in all p-type samples, whereas blue Burstein-Moss shift has been recorded in the n-type films. Atomic Force Microscopic (AFM) analysis shows that both p-type and n-type films have almost same granular-like structure with minor change in average grain size (∼ 6 nm to 10 nm) and surface roughness rms value 3 nm for thickness ∼315 nm which points that grain size and surface roughness did not play any significant role in order to modulate the conductivity type of ZnO. X-ray diffraction (XRD), Energy Dispersive X-ray Spectroscopy (EDS) and X-ray Photoelectron Spectroscopy (XPS) have been employed to perform the structural, chemical and elemental analysis. Hexagonal wurtzite structure has been observed in all samples. The introduction of nitrogen reduces the crystallinity of host lattice. 97% transmittance in the visible range with 1.4 × 107 Ω-1cm-1 optical conductivity have been detected. High absorption value in the ultra-violet (UV) region reveals that NZOs thin films can be used to fabricate next-generation high-performance UV detectors.

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Section: Aip Advances 8 035212 (2018)mentioning

confidence: 39%

Acceptor-modulated optical enhancements and band-gap narrowing in ZnO thin films

et al. 2018

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“…This signal was also assigned to shallow donors and its position appears to be independent on the shallow donor intensity. 26 Recently, Djurisic et al 12,27 found that there is no simple relationship between the intensity of g ϳ 1.96 EPR signal and the visible PL; the green PL is observed for the samples which do not show EPR line at g ϳ 1.96, and they conclude that the most likely explanation for the green luminescence involves multiple defects and/or defect complexes and the major part of the visible emission originates from the centers at the nanostructures surface. Xu et al 28 calculated the levels of various defects including complex defects V O :Zn i and V Zn :Zn i .…”

Section: -4mentioning

confidence: 99%

Size dependent fluorescence spectroscopy of nanocolloids of ZnO

Irimpan

Nampoori

Radhakrishnan

et al. 2007

Journal of Applied Physics

178

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Intra-excitonic relaxation dynamics in ZnO Appl. Phys. Lett. 99, 231910 (2011) Thermal diffusion of nitrogen into ZnO film deposited on InN/sapphire substrate by metal organic chemical vapor deposition J. Appl. Phys. 110, 113509 (2011) Manifestation of spin-spin interaction between oxygen vacancy and magnesium in ZnMgO nanorods by electron paramagnetic resonance studies Appl. Phys. Lett. 99, 194101 (2011) Selective pair luminescence in the 1.4-eV band of CdTe:In J. Appl. Phys. 110, 093103 (2011) Evidence of cation vacancy induced room temperature ferromagnetism in Li-N codoped ZnO thin films Appl. Phys. Lett. 99, 182503 (2011) Additional information on J. Appl. Phys. In this article we present size dependent spectroscopic observations of nanocolloids of ZnO. ZnO is reported to show two emission bands, an ultraviolet ͑UV͒ emission band and another in the green region. Apart from the known band gap 380 nm and impurity 530 nm emissions, we have found some peculiar features in the fluorescence spectra that are consistent with the nanoparticle size distribution. Results show that additional emissions at 420 and 490 nm are developed with particle size. The origin of the visible band emission is discussed. The mechanism of the luminescence suggests that UV luminescence of ZnO colloid is related to the transition from conduction band edge to valence band, and visible luminescence is caused by the transition from deep donor level to valence band due to oxygen vacancies and by the transition from conduction band to deep acceptor level due to impurities and defect states. A correlation analysis between the particle size and spectroscopic observations is also discussed.

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“…Indeed isolated nitrogen acceptors (N O ) were identified by electron paramagnetic resonance (EPR) spectroscopy. [1][2][3] The EPR signals of the isolated nitrogen centers were first observed in nominally undoped ZnO single crystals and later also in ammonia treated ZnO powders. 4,5 To our knowledge, the isolated nitrogen acceptors were never observed in intentionally doped epitaxial films or single crystals, although evidence for the presence of high concentrations of nitrogen was obtained by other characterization methods.…”

Section: Introductionmentioning

confidence: 99%

Electron paramagnetic resonance and photo-electron paramagnetic resonance investigation on the recharging of the substitutional nitrogen acceptor in ZnO

Stehr

Hofmann

Meyer

2012

Journal of Applied Physics

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We investigated the substitutional nitrogen center in ZnO single crystals by electron paramagnetic resonance (EPR) and photo-EPR spectroscopy. Aside the three principle hyperfine lines due to the interaction of the N 0 (2p5) electron spin with the nitrogen nucleus (I ¼ 1, natural abundance 99.6%), we identify additional satellite lines which arise from Dm S ¼ 61 and Dm I ¼ 61, 62 transitions becoming allowed due to quadrupole interaction. The quadrupole coupling constant e 2 qQ/h is determined to À5.9 MHz with an asymmetry parameter of g ¼ 0.05. These values are somewhat different from those obtained for the nitrogen center in ZnO powders, but are closer to the theoretical calculations of Gallino et al. We further carefully investigated the photon induced recharging of the N centers. We determine the energy ht required for the process N O À þ ht ! N O 0 þ e cb À to 2.1 6 0.05 eV, the dependence of the EPR signal intensity on the illumination time shows a mono-exponential behavior which gives evidence that a direct ionization process is monitored.

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Production of nitrogen acceptors in ZnO by thermal annealing

Cited by 200 publications

References 20 publications

Acceptor-modulated optical enhancements and band-gap narrowing in ZnO thin films

Acceptor-modulated optical enhancements and band-gap narrowing in ZnO thin films

Size dependent fluorescence spectroscopy of nanocolloids of ZnO

Electron paramagnetic resonance and photo-electron paramagnetic resonance investigation on the recharging of the substitutional nitrogen acceptor in ZnO

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