Production of broadband modal gain spectra in asymmetric multiple quantum-well Ga_0.47In_0.53As/Ga_0.18In_0.82As_0.4P_0.6heterostructures

Abstract

The modal gain spectra of asymmetric multiple quantum-well Ga 0.47 In 0.53 As/Ga 0.18 In 0.82 As 0.4 P 0.6 heterostructures are theoretically analysed within the framework of the four-band kp method. An efécient procedure for obtaining the broadband and almost êat gain spectrum is proposed. The designs of semiconductor radiation sources with different sets of nonuniformly excited quantum wells producing broadband ampliécation in spectral ranges from 1.28 to 1.525 lm and from 1.36 to 1.6 lm are calculated.