Production of amorphous zones in GaAs by the direct impact of energetic heavy ions

Bench, M. W.; Robertson, I. M.; Kirk, Mark A.; Jenčič, I.

doi:10.1063/1.371825

Cited by 41 publications

(18 citation statements)

References 22 publications

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“…The results indicate an enhancement of irradiation effect for heavier ions, and are consistent with previous results 22. For further discussion, more experimental studies are required.The reason of these phenomena is the irradiated ion enlarged kinetic energy, then irradiate ions can induce larger number of defect atoms.…”

supporting

confidence: 92%

Control of Swelling Height of Si Crystal by Irradiating Ar Beam

Momota¹,

Zhang²,

Toyonaga³

et al. 2012

J. Nanosci. Nanotech.

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It has been found that ion implantation can induce a swelling (step-height) phenomenon on crystal surface. In this paper, we studied about the control of swelling height of Si crystal by irradiating Ar beam under various parameters (fluence, charge and energy). These irradiation parameters were regulated by an irradiation facility that enables to achieve the multiple ionization. For both charges, the swelling height was studied with the various fluencies of two different charges Ar(1+) and Ar(4+). The swelling height increased with increasing the fluence. The swelling height was also studied by changing energy of Ar(4+) beam. The swelling height increased by increasing the energy. The obtained swelling heights are understood base on the contribution of ion-beam induced defect, which is evaluated by SRIM. By comparing with the previous results, it was found that the expansion phenomena also depend on irradiated ion. The swelling structures were found to be stable more than two months. The present results have shown that this method of producing swelling structure indicates the potential application to fabricate 3-D nanostructure.

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supporting

confidence: 92%

Control of Swelling Height of Si Crystal by Irradiating Ar Beam

Momota¹,

Zhang²,

Toyonaga³

et al. 2012

J. Nanosci. Nanotech.

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“…BCA calculations do not have a mechanism to predict amorphization, but MD simulations can predict amorphous zones. The production of amorphous zones has been observed experimentally as a result of irradiation by protons and other ions [35][36][37][38][39]. The production of amorphous zones has also been seen previously in molecular dynamics simulations.…”

Section: Amorphous Zone Productionsupporting

confidence: 72%

Comparison of binary collision approximation and molecular dynamics for displacement cascades in GaAs.

Foiles¹

2011

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The predictions of binary collision approximation (BCA) and molecular dynamics (MD) simulations of displacement cascades in GaAs are compared. There are three issues addressed in this work. The first is the optimal choice of the effective displacement threshold to use in the BCA calculations to obtain the best agreement with MD results. Second, the spatial correlations of point defects are compared. This is related to the level of clustering that occurs for different types of radiation. Finally, the size and structure of amorphous zones seen in the MD simulations is summarized. BCA simulations are not able to predict the formation of amorphous material.4

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“…This kind of energy transfer does not normally lead to atom displacements but may damage the target due to beam-stimulated local chemical reactions. [108][109][110][111] The cross sections of both nuclear and electron scattering decreases with increasing electron energy. Both electron and ion beams can be focused onto an area of several nanometers ͑and even down to 0.6 Å in some TEMs͒, which makes it possible to create defects in predetermined areas of the sample.…”

Section: A Production Of Defects In Bulk Targetsmentioning

confidence: 99%

Ion and electron irradiation-induced effects in nanostructured materials

Krasheninnikov¹,

Nordlund²

2010

Journal of Applied Physics

936

591

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A common misconception is that the irradiation of solids with energetic electrons and ions has exclusively detrimental effects on the properties of target materials. In addition to the well-known cases of doping of bulk semiconductors and ion beam nitriding of steels, recent experiments show that irradiation can also have beneficial effects on nanostructured systems. Electron or ion beams may serve as tools to synthesize nanoclusters and nanowires, change their morphology in a controllable manner, and tailor their mechanical, electronic, and even magnetic properties. Harnessing irradiation as a tool for modifying material properties at the nanoscale requires having the full microscopic picture of defect production and annealing in nanotargets. In this article, we review recent progress in the understanding of effects of irradiation on various zero-dimensional and one-dimensional nanoscale systems, such as semiconductor and metal nanoclusters and nanowires, nanotubes, and fullerenes. We also consider the two-dimensional nanosystem graphene due to its similarity with carbon nanotubes. We dwell on both theoretical and experimental results and discuss at length not only the physics behind irradiation effects in nanostructures but also the technical applicability of irradiation for the engineering of nanosystems.

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Production of amorphous zones in GaAs by the direct impact of energetic heavy ions

Cited by 41 publications

References 22 publications

Control of Swelling Height of Si Crystal by Irradiating Ar Beam

Control of Swelling Height of Si Crystal by Irradiating Ar Beam

Comparison of binary collision approximation and molecular dynamics for displacement cascades in GaAs.

Ion and electron irradiation-induced effects in nanostructured materials

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