The experimental parameter ranges needed to generate superfluidity in optical and drag experiments in GaAs double quantum wells are determined, using a formalism that includes self-consistent screening of the Coulomb pairing interaction in the presence of the superfluid. The very different electron and hole masses in GaAs make this a particularly interesting system for superfluidity, with exotic superfluid phases predicted in the BCS-BEC crossover regime. We find that the density and temperature ranges for superfluidity cover the range for which optical experiments have observed indications of superfluidity, but that existing drag experiments lie outside the superfluid range. However we also show that for samples with low mobility with no macroscopically connected superfluidity, if the superfluidity survived in randomly distributed localized pockets, standard quantum capacitance measurements could detect these pockets.While Bose Einstein Condensation (BEC) and the BCS-BEC crossover phenomena in superfluidity have been extensively studied for ultracold Fermi atoms[1-3], it is probable that practical applications will instead be based on superfluidity in solid state devices. Existence of superfluidity in coupled atomically-flat layers in semiconductor heterostructures has been theoretically predicted [4,5], while recent observations of dramatically enhanced tunneling at equal densities in electron-hole double bilayer sheets of graphene [6,7] and in double monolayers of transition metal dichalcogenide monolayers [8,9] are strong experimental indications for electron-hole condensation [10].Electron-hole superfluidity and the BCS-BEC crossover was first proposed for an excitonic system in a conventional semiconductor heterostructure of double quantum-wells in GaAs[11]. This was based on extensions of earlier work on exciton condensation [12][13][14][15]. To block electron-hole recombination, Refs. 14, 15 proposed spatially separating the electrons and holes in a heterostructure consisting of two layers separated by an insulating barrier. Superfluidity in GaAs quantum-wells differs in significant ways from superfluidity in coupled atomically-flat layers. The large band gap in GaAs eliminates the multicondensate effects and multiband screening that are important in graphene [16], and the low-lying conduction and valence bands are nearly parabolic, and not dependent on gate potentials. arXiv:1910.06631v1 [cond-mat.supr-con]