PRODUCTION AND ANNEALING OF LATTICE DISORDER IN SILICON BY 200-keV BORON IONS

Westmoreland, J.E.; Mayer, J. W.; Eisen, F. H.; Welch, B.M.

doi:10.1063/1.1653010

Cited by 50 publications

(8 citation statements)

References 7 publications

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“…Note that even at a much smaller dose, 2 3 10 14 cm 22 , the backscattering is very large, evidence for the approach to amorphicity, in agreement with early studies [10]. In contrast, B 1 implantation of comparable doses leads to much less backscattering, indicative of a largely preserved crystal structure [11]. For the high dose, 7 3 10 15 cm 22 , we estimate that more than 85% of the Si atoms occupy crystalline lattice positions in the implanted layer, while for the smaller dose, 6 3 10 14 cm 22 , more than 95% of the Si atoms retain the long-range monocrystalline order [15].…”

Section: Generation Of Low-energy Excitations In Siliconsupporting

confidence: 84%

“…At ion energies in the range of 200 keV, implantation at room temperature with small power density (,50 mW͞cm 2 ) by 28 Si 1 leads to amorphization at doses .4 3 10 14 cm 22 [10], while amorphization by 11 B 1 under the same conditions would require doses .2 3 10 16 cm 22 [11]. The damage caused by ion implantation into a substrate is usually confined to thin layers.…”

Section: Generation Of Low-energy Excitations In Siliconmentioning

confidence: 99%

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Generation of Low-Energy Excitations in Silicon

Liu

Pohl

et al. 1998

Phys. Rev. Lett.

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In order to understand the low-energy vibrational excitations common to amorphous solids, we have studied their evolution in ion-implanted crystalline silicon by measuring internal friction and heat conduction. The spectral density of these low-energy excitations evolves with increasing dose exactly towards that observed in the amorphous phase. More importantly, this evolution is unrelated to that of the amorphicity. We conclude that the defects in the crystal should be used to model the excitations in the amorphous silicon, rather than the amorphous structure itself. [S0031-9007(98)07337-2]

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Section: Generation Of Low-energy Excitations In Siliconsupporting

confidence: 84%

Section: Generation Of Low-energy Excitations In Siliconmentioning

confidence: 99%

Generation of Low-Energy Excitations in Silicon

Liu

Pohl

et al. 1998

Phys. Rev. Lett.

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“…The small interstitial type of defects contain silicon atoms in interstitial positions. This would explain the large direct scattering component after the boron implantation observed in this work as well as in other studies [22]. From references [19,20] it is known that the intrinsic damage anneals out in a number of anneal steps and completely vanishes at anneal temperatures between 600°C and 700 o C, depending on the density of the damage.…”

Section: Discussionsupporting

confidence: 63%

Defect and dopant depth profiles in boron-implanted silicon studied with channeling and nuclear reaction analysis

Vos

Boerma

Smulders

et al. 1986

Nuclear Instruments and Methods in Physics Research Section B:

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Single crystals of silicon were implanted at RT with 1 MeV boron ions to a dose of 1 X 10 l5 ions/cm2. The depth profile of the boron was measured using the 2060-keV resonance of the "B(a n)14N nuclear reaction. The distribution of the lattice disorder as a , function of depth was determined from channeling of MeV a-particles. This was done in the as-implanted case and after furnace annealing at temperatures up to 1000°C. A short description of the applied techniques is presented. The crystal disorder was found to almost vanish during annealing at 600°C and to reappear at higher annealing temperatures at a depth coinciding with the projected range of the boron ions. Both the boron and the disorder depth profiles are broadened after annealing at 1000°C. The results agree with recent findings on defect annealing in silicon.

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“…These deviations may have several reasons: First, the charge pumping experiments do not measure all defects, but only defects with energy levels and position in a certain range. Next, the BC simulations do not include damage annealing, which is known to occur even at room temperature [11]. Such damage annealing reduces the total number of defects and may cause non-linear effects.…”

Section: Discussionmentioning

confidence: 99%

Simulation of Focused Ion Beam Induced Damage Formation in Crystalline Silicon

et al. 2003

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Application of focused ion beams (FIB) to circuit modification during design and debugging of integrated circuits is limited by the degradation of active devices due to beam induced crystal damage. In order to investigate FIB induced damage formation theoretically, we have extended our 1-D/2-D binary collision (BC) code IMSIL to allow surface movement due to sputtering. In contrast to other dynamic BC codes, the crystal structure of the target and damage generation during implantation may be taken into account. Using this tool we simulate the milling of trenches in the gate stack of MOSFETs and compare the results with transmission electron microscopy cross sections and charge pumping data. The simulations confirm that damage tails are generated that are a factor of two deeper at relevant defect concentrations than expected by conventional BC simulations. This result is shown to be due to recoil channeling in spite of the fact that a beam-induced surface amorphous layer is present throughout the implant. In addition, we discuss the accuracy of the experimental results and the simulations.

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PRODUCTION AND ANNEALING OF LATTICE DISORDER IN SILICON BY 200-keV BORON IONS

Cited by 50 publications

References 7 publications

Generation of Low-Energy Excitations in Silicon

Generation of Low-Energy Excitations in Silicon

Defect and dopant depth profiles in boron-implanted silicon studied with channeling and nuclear reaction analysis

Simulation of Focused Ion Beam Induced Damage Formation in Crystalline Silicon

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