Processing-phase diagrams: a new tool for solution-deposited thin-film development applied to the In5O(OPri)13–In2O3 system

Pasquarelli, Robert M.; Hest, Maikel F.A.M. van; Perkins, John D.; O’Hayre, Ryan; Ginley, David S.

doi:10.1039/c3tc31930j

Cited by 2 publications

(1 citation statement)

References 40 publications

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“…This was previously proposed for In 2 O 3 in Refs. [35][36][37][38]. These reports show that the crystallization temperature depends on the In/O ratio, the deposition temperature and ultimately the route of oxygen incorporation [35,36,39,40].…”

Section: A Microstructure: Effect Of Thermal Annealing Under Distinct...mentioning

confidence: 90%

Zr-doped indium oxide electrodes: Annealing and thickness effects on microstructure and carrier transport

Rucavado

Landucci

Döbeli

et al. 2019

Phys. Rev. Materials

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Zr-doped indium oxide (In 2 O 3 :Zr) has been shown to satisfy the requirements of low resistance, wide band gap, and high infrared transmittance for application as a front contact in broadband solar cells. However, the reduction of indium usage in front of transparent electrodes is still an unsatisfied requirement. With the goal of reducing the amount of indium while leveraging its properties, in this work, In 2 O 3 :Zr films with reduced thickness compared to those standardly used in solar cells are studied. 100 to 15-nm-thick films were sputtered at room temperature and annealed in distinct atmospheres to study the links between thickness, microstructure, and optoelectronic properties. As-deposited films exhibit an amorphous microstructure embedding bixbyite In 2 O 3 nanocrystals. Annealing in neutral (N 2 ) or reducing atmosphere (H 2 ) allows a slight growth of these crystallites but the layers remain mostly amorphous. Whereas annealing in air results in polycrystalline films with an average grain lateral size ranging from 350 to 500 nm. The large crystalline grains formed during air annealing lead to increased electron mobility for all thickness: up to 100 cm 2 V −1 s −1 for 100-nm-thick films and up to 50 cm 2 V −1 s −1 for 15-nm-thick films, which is remarkable for such thin polycrystalline films. Conversely, H 2 annealing ensures high free-carrier densities (>1 × 10 20 cm −3 ) but not high mobilities, still achieving conductivities between 1000 and 2000 S cm −1 , with the films less than 50-nm-thick keeping high broadband transmittance. The possibility of thinning down In 2 O 3 :Zr to a few tens of nanometers while keeping both high lateral conductivity and good transparency makes this material a promising candidate to reduce the amount of indium in optoelectronic applications, such as flexible touch screens and solar cells.

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Section: A Microstructure: Effect Of Thermal Annealing Under Distinct...mentioning

confidence: 90%

Zr-doped indium oxide electrodes: Annealing and thickness effects on microstructure and carrier transport

Rucavado

Landucci

Döbeli

et al. 2019

Phys. Rev. Materials

View full text Add to dashboard Cite

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A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

Park

Kang

Kim

2019

Adv Funct Materials

307

211

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Solution processing, including printing technology, is a promising technique for oxide thin-film transistor (TFTs) fabrication because it tends to be a costeffective process with high composition controllability and high throughput. However, solution-processed oxide TFTs are limited by low-performance and stability issues, which require high-temperature annealing. This high thermal budget in the fabrication process inhibits oxide TFTs from being applied to flexible electronics. There have been numerous attempts to promote the desired electrical characteristics of solution-processed oxide TFTs at lower fabrication temperatures. Recent techniques for achieving low-temperature (<350 °C) solution-processed and printed oxide TFTs, in terms of the materials, processes, and structural engineering methods currently in use are reviewed. Moreover, the core techniques for both n-type and p-type oxidebased channel layers, gate dielectric layers, and electrode layers in oxide TFTs are addressed. Finally, various multifunctional and emerging applications based on low-temperature solution-processed oxide TFTs are introduced and future outlooks for this highly promising research are suggested.

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Processing-phase diagrams: a new tool for solution-deposited thin-film development applied to the In5O(OPri)13–In2O3 system

Cited by 2 publications

References 40 publications

Zr-doped indium oxide electrodes: Annealing and thickness effects on microstructure and carrier transport

Zr-doped indium oxide electrodes: Annealing and thickness effects on microstructure and carrier transport

A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

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