Processing of Reaction-Bonded Silicon Carbide Without Residual Silicon Phase

Messner, Robert P.; Chiang, Yet‐Ming

doi:10.1002/9780470310496.ch58

Cited by 10 publications

(5 citation statements)

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“…It is believe that the formation of SiC begins at the active site on CNTs defects, and the solid state reaction mainly depends on the diffusion of carbon atoms through the interstitial sites and Si atoms by vacancy migration in regular silicon sites [29]. Thus, silicon and carbon atoms diffusion each other through the formed SiC layer, reaches the interface of carbon-silicon carbide and reacts to form a continuous β-SiC reaction layer [37].…”

Section: Morphologies Of As-mixedmentioning

confidence: 99%

Regulation of interface between carbon nanotubes-aluminum and its strengthening effect in CNTs reinforced aluminum matrix nanocomposites

Zhang

Pan

et al. 2019

Carbon

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Section: Morphologies Of As-mixedmentioning

confidence: 99%

Regulation of interface between carbon nanotubes-aluminum and its strengthening effect in CNTs reinforced aluminum matrix nanocomposites

Zhang

Pan

et al. 2019

Carbon

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“…These ceramics are commonly produced by hot pressing or pressureless sintering. Recently, reaction bonding has become a promising alternative because it offers rapid fabrication times, reduced processing temperatures, and can produce complex, near net-shape parts [4], e.g., a one-piece ceramic helicopter seat [5,6]. In this method, a porous ceramic (B 4 C and/or SiC) powder preform is placed in a vacuum furnace along with Si lumps.…”

Section: Introductionmentioning

confidence: 99%

Measurement of microscale residual stresses in multi-phase ceramic composites using Raman spectroscopy

et al. 2017

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A methodology is described for characterizing the spatial distribution of thermal mismatch stresses at grain level in B 4 C-SiC-Si ceramic composites using Raman spectroscopy. Unlike traditional methods to detect residual stress (e.g., X-ray diffraction) which provide average values over the entire specimen surface, Raman peak-shift analysis provides residual stress distributions within the microstructure at high spatial resolution. While the classical formulation predicts uniform compressive stress within a Si-phase surrounded by the ceramic matrix, the Raman measurements revealed non-uniform residual stress distributions in Si when the particle size was larger than 5 microns. For large irregular shaped particles, the two methods coincide only along the interface between the particle and matrix, but vary drastically both in magnitude and nature in the interior of the particle where large tensile stresses have been measured. The average residual stress within the microstructure was found to correlate well with the volume fraction of the constituents and material properties. The presence of anomalous tensile stress in the interior of the minor Si-phase results in defect generation and structural disorder which has been confirmed by a subsequent TEM analysis.

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“…The amount of residual silicon strongly depends on the initial porosity of the preforms and on the initial amount of free carbon 4 . In order to reduce the residual silicon fraction, various approaches such as the addition of elements that react with silicon to form stable silicides, 6 infiltration of partially sintered preforms, 7 addition of elements or phases (Ti, Fe, TiC) that react with boron carbide and release an additional amount of free carbon 8–10 have been put forward. It has been pointed out 5 that high density of the green preforms allows reducing the fraction of residual silicon and, in some cases, eliminates the necessity of adding free carbon to the boron carbide powder.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Particle Size Distribution on the Microstructure and the Mechanical Properties of Boron Carbide‐Based Reaction‐Bonded Composites

Hayun

Weizman

Dariel

et al. 2009

Int J Applied Ceramic Tech

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The presence of unreacted, free silicon lowers the mechanical properties of reaction‐bonded boron carbide. The fraction of free silicon can be reduced by increasing the green density of the initial boron carbide performs. The use of multimodal boron carbide mixtures allows attaining 75% green density. After reaction bonding with molten silicon, the composites consist of four phases, namely the original B4C particles, the B12(B,C,Si)3 phase, product of the dissolution–precipitation process, β‐SiC, and residual Si. The volume fraction of residual Si in the composites is in the 8–10% range. The infiltrated composites display elevated values of the mechanical properties with a high Weibull modulus.

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Processing of Reaction-Bonded Silicon Carbide Without Residual Silicon Phase

Cited by 10 publications

References 0 publications

Regulation of interface between carbon nanotubes-aluminum and its strengthening effect in CNTs reinforced aluminum matrix nanocomposites

Regulation of interface between carbon nanotubes-aluminum and its strengthening effect in CNTs reinforced aluminum matrix nanocomposites

Measurement of microscale residual stresses in multi-phase ceramic composites using Raman spectroscopy

The Effect of Particle Size Distribution on the Microstructure and the Mechanical Properties of Boron Carbide‐Based Reaction‐Bonded Composites

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