Processing effects on the structure of CdTe, CdS and SnO2 thin films

Optical properties of swift ion beam irradiated CdTe thin films

“…For film exposed to 3 × 10 12 ions/cm 2 a broad feature centered at 1.492 eV is observed with a row of equidistant peaks at 1.471, 1.450 and 1.513 eV, whose energy separation is equal to the CdTe LO phonon energy of 21 meV [27,28]. The peak at 1.513 eV, the socalled 'shoulder' is identified as the zero-phonon line of the DAP recombination and the peaks at 1.471 and 1.450 eV are the first and second LO phonon replicas of the band at 1.492 eV.…”

Correlation of microscopic grain evolution in post‐CdCl 2 annealing and performance of CdS/CdTe thin‐film solar cells fabricated using pulsed laser deposition

“…The obtained E g is approximately 1.5 eV, agreeing well with that for the cubic CdTe bulk [11] and demonstrating a negligible variation of E g after annealing. This is not surprising since only a slight difference in E g values was reported on samples fabricated using different techniques [1,26,35]. Furthermore, as Wei et al have verified, the CdX (X ¼ S, Se, Te) in the hexagonal phase has a larger E g by $0.1 eV than in the cubic phase [36,37].…”

Ion beam mixing of silicon-germanium thin films

“…These include the method of preparation, processing conditions, and structural alterations within the film components and incorporation of light impurities followed by the formation of an interfacial layer possibly by interdiffusion processes. [12][13][14] More specifically, the efficiency of silicon solar cells can be enhanced if a lower band-gap material is introduced into the device. In fact, Si 1-x Ge x alloys are miscible for most values of Ge concentration, x.…”