Processing dependence of structural and physical properties of Mg2Ge thin films prepared by pulsed laser deposition

Chuang, L.; Wang, D.Y.; Tan, Teck Meng; Assadi, M. Hussein N.; Li, S.

doi:10.1016/j.tsf.2012.05.071

Cited by 9 publications

(2 citation statements)

References 15 publications

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“…where h is the Plank's constant (J s), t the light frequency (s À1 ), and E g the optical bandgap energy (eV). 36,37 The diffuse reflectance of the coating in the IR range was measured with a UV-visible-NIR spectrophotometer (UV 3600; Shimadzu) equipped with an ISR-3100 integrating sphere (a standard white board BaSO 4 was used for the baseline).…”

Section: Characterizationmentioning

confidence: 99%

Impacts of Cu-Doping and Mg-Deficiency on Mg2Sn Thin Films Thermoelectric Properties

Safavi

Martin

Aubry

et al. 2021

Journal of Elec Materi

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Two groups of Mg-Sn thin films were deposited by magnetron co-sputtering of Mg, Sn, and Cu targets. Group I was Mg-Sn films with [Mg]/[Sn] = 2 and group II with [Mg]/[Sn] = 1.75. The effect of Mg-deficiency and Cu-doping on the structure and thermoelectric properties was investigated. Both groups were doped by different Cu concentrations (0 at.%, 0.5 at.%, and 1.5 at.%). The structure and morphology of the thin films were investigated. The stable face-centered cubic structure was only observed for undoped film of group I, while a mixture of facecentered cubic and metastable orthorhombic structures coexisted for other samples whatever the Cu content. Carrier concentration and mobility were measured to explain the electronic transport behaviors of the films. The bandgap energy for both groups was estimated by the Kubelka-Munk's method. The influence of the Mg deficiency and Cu doping on the thermoelectric properties was discussed for a range of temperatures: 30-200°C. For both groups, the best figure-of-merit, ZT, was obtained at 200°C for samples doped with 0.5 at.% Cu with ZT = 0.07 for group I and ZT = 0.27 for group II.

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Section: Characterizationmentioning

confidence: 99%

Impacts of Cu-Doping and Mg-Deficiency on Mg2Sn Thin Films Thermoelectric Properties

Safavi

Martin

Aubry

et al. 2021

Journal of Elec Materi

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“…where PF = S 2 σ is the power factor contributed to by the Seebeck coefficient S and the electrical conductivity σ to evaluate the electrical performance, κ is the total thermal conductivity contributed to by the electrical thermal conductivity κ e and lattice thermal conductivity κ l , and T represents the absolute temperature [7][8][9]. GeTe-based materials have been considered as promising thermoelectric materials since the 1960s, and their performance has been greatly improved recently [10,11]. GeTe belongs to a P-type narrow-band-gap semiconductor, which is the rhombic phase (R-GeTe, R3 m) below 700 K and the cubic phase (C-GeTe, Fm3m) above 700 K [12].…”

Section: Introductionmentioning

confidence: 99%

Study on the Effect of Sn, In, and Se Co-Doping on the Thermoelectric Properties of GeTe

Guo,

Zhang,

Nan

et al. 2024

Materials

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GeTe and Ge0.99-xIn0.01SnxTe0.94Se0.06 (x = 0, 0.01, 0.03, and 0.06) samples were prepared by vacuum synthesis combined with spark plasma sintering (SPS). The thermoelectric properties of GeTe were coordinated by multiple doping of Sn, In, and Se. In this work, a maximum zT(zT = S2σT/κ) of 0.9 and a power factor (PF = S2σ) of 3.87 μWmm−1 K−2 were obtained in a sample of Ge0.99In0.01Te0.94Se0.06 at 723K. The XRD results at room temperature show that all samples are rhombohedral phase structures. There is a peak (~27°) of the Ge element in GeTe and the sample (x = 0), but it disappears after Sn doping, indicating that Sn doping can promote the dissolution of Ge. The scattering mechanism of the doped samples was calculated by the conductivity ratio method. The results show that phonon scattering Is dominant in all samples, and alloy scattering is enhanced with the increase in the Sn doping amount. In doping can introduce resonance energy levels and increase the Seebeck coefficient, and Se doping can introduce point defects to suppress phonon transmission and reduce lattice thermal conductivity. Therefore, the thermoelectric properties of samples with x = 0 improved. Although Sn doping will promote the dissolution of Ge precipitation, the phase transition of the samples near 580 K deteriorates the thermoelectric properties. The thermoelectric properties of Sn-doped samples improved only at room temperature to ~580 K compared with pure GeTe. The synergistic effect of multi-element doping is a comprehensive reflection of the interaction between elements rather than the sum of all the effects of single-element doping.

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Study of Mg2Si Thin Film and Ultra-Thin Film Formation for Thermoelectric Applications

Zouak

Zirmi

Belkaid

et al. 2019

Journal of Elec Materi

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Processing dependence of structural and physical properties of Mg2Ge thin films prepared by pulsed laser deposition

Cited by 9 publications

References 15 publications

Impacts of Cu-Doping and Mg-Deficiency on Mg2Sn Thin Films Thermoelectric Properties

Impacts of Cu-Doping and Mg-Deficiency on Mg2Sn Thin Films Thermoelectric Properties

Study on the Effect of Sn, In, and Se Co-Doping on the Thermoelectric Properties of GeTe

Study of Mg2Si Thin Film and Ultra-Thin Film Formation for Thermoelectric Applications

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